Keyphrases
Germanium Quantum Dots
96%
SiGe
39%
Silica
38%
Silicon Nitride
28%
Germanium
17%
Thermal Oxidation
16%
Single Hole Transistor
16%
Quantum Dots
16%
Poly-Si
15%
Room Temperature
15%
Gate Stack
14%
Self-aligned
14%
Ge Dot
13%
Transistor
12%
Phototransistor
12%
Tunneling Current
12%
Si1-xGex
11%
Amorphous InGaZnO (a-IGZO)
11%
Selective Oxidation
11%
Heterostructure
11%
Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs)
11%
Thin-film Transistors
10%
Gallium Arsenide
10%
Self-aligned Electrodes
10%
Film Profile Engineering
9%
Single Electron Transistor
9%
SiGe Channel
9%
Insulator
9%
High Performance
9%
Polysilicon
9%
Nanospheres
9%
MOSFET
9%
Tunable Size
9%
Gate-all-around
9%
Gate Oxide
8%
Channel Length
8%
Si Photonics
8%
Si Substrate
8%
Poly-SiGe
8%
Electronic Devices
8%
Quantum Dot Arrays
7%
Electrical Properties
7%
Film Profile
7%
ZnON
7%
Random Telegraph Noise
7%
PMOSFET
7%
SiGe Heterostructures
7%
Optical Interconnects
6%
Nanowires
6%
T Gate
6%
Material Science
Quantum Dot
100%
Germanium
56%
Transistor
44%
Oxidation Reaction
31%
Thin-Film Transistor
29%
Silicon Nitride
29%
Heterojunction
22%
Oxide Compound
20%
Metal-Oxide-Semiconductor Field-Effect Transistor
18%
Silicon
14%
Density
14%
Metal Oxide
13%
Film
12%
Nanowire
12%
Selective Oxidation
12%
Oxide Semiconductor
11%
Surface (Surface Science)
11%
Nanosphere
9%
Dielectric Material
8%
Capacitance
7%
Gallium Arsenide
7%
Thin Films
6%
Composite Material
6%
Capacitor
6%
Electronic Circuit
6%
Bipolar Transistor
5%
Nanocrystallites
5%
Engineering
Quantum Dot
63%
Silicon Dioxide
29%
Polysilicon
25%
Thin-Film Transistor
21%
Metal-Oxide-Semiconductor Field-Effect Transistor
20%
Tunnel Construction
15%
Heterojunctions
14%
Engineering
12%
Nanowire
10%
Room Temperature
10%
Channel Length
10%
Gate Oxide
10%
Phototransistor
9%
Gallium Arsenide
8%
Single Electron
7%
Inverter
7%
Thermal Oxidation
7%
Optical Interconnect
7%
Responsivity
7%
Si Nanowires
6%
Heterostructures
6%
Building Block
5%
Bipolar Transistor
5%
Photocurrent
5%
Metal Oxide Semiconductor
5%
Si Photonics
5%
Si Substrate
5%
Gate Dielectric
5%
