Jenn-Fang Chen

Research output

Research output per year 1982 2005 2006 2007 2008 2011 2015

• 119 Article
• 10 Conference article
• 8 Conference contribution
• 5 Paper
• 6 More
  • 3 Patent
  • 2 Review article
  • 1 Comment/debate

Research output per year

Research output per year

Search results

• 2015

  Sweeping-rate-dependent photocurrent of GaAs Schottky diode with strain relaxed InAs quantum dots

  Wang, J. F., Lin, C. L., Pan, S. S., Huang, C-H., Hsieh, C. S. & Chen, J-F., 1 Apr 2015, In: Japanese journal of applied physics. 54, 4, 04DF04.

  Research output: Contribution to journal › Article › peer-review

  • Photocurrents 100%
  • Schottky diodes 72%
  • Diodes 63%
  • photocurrents 63%
  • quantum dots 53%
• 2014

  Dark current suppression of amorphous selenium based photosensors by the ZnO hole blocking layer

  Yu, T. Y., Pan, F-M., Chang, C. Y., Hu, T., Chen, J-F., Wang, J. F., Lin, C. L., Chen, T. H. & Chen, T. M., 1 Jan 2014, In: Current Applied Physics. 14, 5, p. 659-664 6 p.

  Research output: Contribution to journal › Article › peer-review

  • Selenium 100%
  • Dark currents 96%
  • photosensors 88%
  • Oxygen vacancies 74%
  • selenium 72%
  10 Scopus citations
• 2013

  Effects of cross-sectional area on the tunneling-junction array in octahedral PbSe colloidal-nanocrystal solids

  Chiu, S. C., Jhang, J. S., Chen, J-F., Fang, J. & Jian, W-B., 14 Oct 2013, In: Physical Chemistry Chemical Physics. 15, 38, p. 16127-16131 5 p.

  Research output: Contribution to journal › Article › peer-review

  • nanocrystals 100%
  • Nanocrystal 91%
  • Tunneling 57%
  • Electron Transport 54%
  • Octahedral Crystal 26%
  6 Scopus citations

• Exploration of water jet generated by Qswitched laser induced water breakdown with different depths beneath a flat free surface

  Chen, R. C. C., Yu, Y. T., Su, K-W., Chen, J-F. & Chen, Y-F., 14 Jan 2013, In: Optics Express. 21, 1, p. 445-453 9 p.

  Research output: Contribution to journal › Article › peer-review

  • hydraulic jets 100%
  • craters 72%
  • breakdown 58%
  • bubbles 58%
  • water 43%
  25 Scopus citations

• Hole injection and electron overflow improvement in 365nm light-emitting diodes by band-engineering electron blocking layer

  Fu, Y. K., Lu, Y. H., Xuan, R., Chen, J-F. & Su, Y. K., 1 Aug 2013, In: Japanese Journal of Applied Physics. 52, 8 PART 2, 08JK05.

  Research output: Contribution to journal › Article › peer-review

  • Electrons 100%
  • Light emitting diodes 98%
  • light emitting diodes 79%
  • engineering 73%
  • injection 72%
  6 Scopus citations
• 2012

  Dielectrophoretic placement of quasi-zero-, one-, and two-dimensional nanomaterials into nanogap for electrical characterizations

  Lin, Y. F., Chiu, S. C., Wang, S. T., Fu, S. K., Chen, C. H., Xie, W. J., Yang, S-H., Hsu, C-S., Chen, J-F., Zhou, X., Liu, Z., Fang, J. & Jian, W-B., 1 Aug 2012, In: Electrophoresis. 33, 16, p. 2475-2481 7 p.

  Research output: Contribution to journal › Article › peer-review

  • 1-(2-(dodecyloxy)ethyl)pyrrolidine hydrochloride 100%
  • lead selenide 83%
  • Nanostructures 73%
  • polyaniline 45%
  • Electron Transport 41%
  6 Scopus citations

• Electron emission properties of GaAsN/GaAs quantum well containing N-Related localized states: The influence of illuminance

  Hsieh, M. C., Wang, J. F., Wang, Y. S., Yang, C. H., Chiang, C. H. & Chen, J-F., 1 Feb 2012, In: Japanese journal of applied physics. 51, 2 PART 2, 02BJ12.

  Research output: Contribution to journal › Article › peer-review

  • Electron emission 100%
  • Semiconductor quantum wells 92%
  • illuminance 77%
  • electron emission 58%
  • quantum wells 45%

• Enhancing threshold voltage of AlGaN/GaN high electron mobility transistors by nano rod structure: From depletion mode to enhancement mode

  Xuan, R., Kuo, W. H., Hu, C. W., Lin, S. F. & Chen, J-F., 10 Sep 2012, In: Applied Physics Letters. 101, 11, 112105.

  Research output: Contribution to journal › Article › peer-review

  • high electron mobility transistors 100%
  • threshold voltage 91%
  • depletion 84%
  • rods 79%
  • augmentation 58%
  9 Scopus citations

• How do InAs quantum dots relax when the InAs growth thickness exceeds the dislocation-induced critical thickness?

  Chen, J-F., Lin, Y. C., Chiang, C. H., Chen, R. C. C., Chen, Y-F., Wu, Y. H. & Chang, L., 1 Jan 2012, In: Journal of Applied Physics. 111, 1, 7 p., 013709.

  Research output: Contribution to journal › Article › peer-review

  • quantum dots 100%
  • electron emission 31%
  • indium 30%
  • capacitance 25%
  • traps 24%
  11 Scopus citations

• Optical simulation and fabrication of near-ultraviolet LEDs on a roughened backside GaN substrate

  Fu, Y. K., Lu, Y. H., Xuan, R., Chao, C. H., Su, Y. K. & Chen, J-F., 7 Mar 2012, In: IEEE Photonics Technology Letters. 24, 6, p. 488-490 3 p., 6122049.

  Research output: Contribution to journal › Article › peer-review

  • Pyramidal Crystal 100%
  • ultraviolet radiation 87%
  • Light emitting diodes 87%
  • light emitting diodes 70%
  • Hexagonal Space Group 69%
  2 Scopus citations
• 2011

  Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

  Fu, Y. K., Lu, Y. H., Jiang, R. H., Chen, B. C., Fang, Y. H., Xuan, R., Su, Y. K., Lin, C. F. & Chen, J-F., 1 Aug 2011, In: Solid-State Electronics. 62, 1, p. 142-145 4 p.

  Research output: Contribution to journal › Article › peer-review

  • Metallorganic vapor phase epitaxy 100%
  • Metallorganic Chemical Vapour Deposition 91%
  • Ultraviolet radiation 74%
  • Optoelectronic devices 66%
  • Atmospheric pressure 63%
  4 Scopus citations

• Electron emission properties of nitrogen-induced localized defects in InAsN/GaAs quantum dots

  Yang, C. H., Hsieh, M. C., Wu, C. W., Chang, Y. T., Wu, Y. H., Chang, L. & Chen, J-F., 1 Nov 2011, In: Japanese journal of applied physics. 50, 11R, 6 p., 111001.

  Research output: Contribution to journal › Article › peer-review

  • Electron emission 100%
  • electron emission 58%
  • Nitrogen 55%
  • quantum dots 46%
  • nitrogen 43%

• Improving the photoluminescence properties of self-assembled InAs surface quantum dots by incorporation of antimony

  Chiang, C. H., Wu, Y. H., Hsieh, M. C., Yang, C. H., Wang, J. F., Chen, R. C. C., Chang, L. & Chen, J-F., 15 Aug 2011, In: Applied Surface Science. 257, 21, p. 8784-8787 4 p.

  Research output: Contribution to journal › Article › peer-review

  • Photoluminescence 100%
  • Antimony 89%
  • antimony 68%
  • Quantum Dot 54%
  • quantum dots 47%
  6 Scopus citations

• Optical joint density of states in InGaN/GaN-based multiple-quantum-well light-emitting diodes

  Wang, Y. S., Chen, N. C., Lu, C. Y. & Chen, J-F., 15 Nov 2011, In: Physica B: Condensed Matter. 406, 22, p. 4300-4303 4 p.

  Research output: Contribution to journal › Article › peer-review

  • Blue shift 100%
  • Semiconductor quantum wells 81%
  • Density of State 56%
  • Light emitting diodes 51%
  • light emitting diodes 41%
  10 Scopus citations

• Reduction of efficiency droop in InGaN light-emitting diode grown on self-separated freestanding GaN substrates

  Chao, C. L., Xuan, R., Yen, H. H., Chiu, C. H., Fang, Y. H., Li, Z. Y., Chen, B. C., Lin, C-C., Chiu, C. H., Guo, Y. D., Kuo, H-C., Chen, J-F. & Cheng, S-J., 15 Jun 2011, In: IEEE Photonics Technology Letters. 23, 12, p. 798-800 3 p., 5740304.

  Research output: Contribution to journal › Article › peer-review

  • Threading Dislocation 100%
  • Vapor Phase Epitaxy 84%
  • Light emitting diodes 52%
  • Nanorod 45%
  • Hydride 45%
  17 Scopus citations

• Role of the N-related localized states in the electron emission properties of a GaAsN quantum well

  Hsieh, M. C., Wang, J. F., Wang, Y. S., Yang, C. H., Chen, R. C. C., Chiang, C. H., Chen, Y-F. & Chen, J-F., 15 Nov 2011, In: Journal of Applied Physics. 110, 10, 103709.

  Research output: Contribution to journal › Article › peer-review

  • electron emission 100%
  • quantum wells 78%
  • electron states 41%
  • annealing 15%
  • electron tunneling 14%
  7 Scopus citations

• Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process

  Fu, Y. K., Chen, B. C., Fang, Y. H., Jiang, R. H., Lu, Y. H., Xuan, R., Huang, K-F., Lin, C. F., Su, Y. K., Chen, J-F. & Chang, C-Y., 15 Sep 2011, In: IEEE Photonics Technology Letters. 23, 19, p. 1373-1375 3 p., 5940992.

  Research output: Contribution to journal › Article › peer-review

  • Wet etching 100%
  • Pyramidal Crystal 81%
  • Transmittance 71%
  • Light emitting diodes 71%
  • Etching 64%
  14 Scopus citations

• The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

  Fu, Y. K., Jiang, R. H., Lu, Y. H., Chen, B. C., Xuan, R., Fang, Y. H., Lin, C. F., Su, Y. K. & Chen, J-F., 21 Mar 2011, In: Applied Physics Letters. 98, 12, 121115.

  Research output: Contribution to journal › Article › peer-review

  • vapor phase epitaxy 100%
  • ultraviolet radiation 95%
  • atmospheric pressure 85%
  • light emitting diodes 76%
  • indium 30%
  32 Scopus citations
• 2010

  Bimodel onset strain relaxation in InAs quantum dots with an InGaAs capping layer

  Chen, J-F., Chen, R. C. C., Chiang, C. H., Chen, Y-F., Wu, Y. H. & Chang, L., 30 Aug 2010, In: Applied Physics Letters. 97, 9, 3 p., 092110.

  Research output: Contribution to journal › Article › peer-review

  • quantum dots 100%
  • indium 82%
  • photoluminescence 60%
  • electron states 47%
  • transmission electron microscopy 28%
  7 Scopus citations

• Compensation effect and differential capacitance analysis of electronic energy band structure in relaxed InAs quantum dots

  Chen, J-F., Chen, R. C. C., Chiang, C. H., Hsieh, M. C., Chang, Y. C. & Chen, Y-F., 15 Sep 2010, In: Journal of Applied Physics. 108, 6, 063705.

  Research output: Contribution to journal › Article › peer-review

  • energy bands 100%
  • capacitance 85%
  • quantum dots 82%
  • electronics 55%
  • depletion 46%
  2 Scopus citations

• Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers

  Shu, G. W., Wang, J. S., Shen, J. L., Hsiao, R. S., Chen, J. F., Lin, T. Y., Wu, C. H., Huang, Y. H. & Yang, T. N., 15 Jan 2010, In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 166, 1, p. 46-49 4 p.

  Research output: Contribution to journal › Article › peer-review

  • Photoluminescence 100%
  • Quantum Dot 54%
  • quantum dots 47%
  • photoluminescence 43%
  • Quantum confinement 28%
  8 Scopus citations

• Study of electric characteristics and diffusion effects of 2-methyl-9,10-di(2-naphthyl)anthracene doped with cesium fluoride by admittance spectroscopy

  Hsieh, M. T., Ho, M. H., Lin, K. H., Chen, J-F., Chen, T-M. & Chen, C. H., 12 Apr 2010, In: Applied Physics Letters. 96, 13, 133310.

  Research output: Contribution to journal › Article › peer-review

  • cesium fluorides 100%
  • anthracene 67%
  • electrical impedance 57%
  • frequency measurement 31%
  • spectroscopy 28%
  23 Scopus citations
• 2009

  Influence of thermal annealing on the electron emission of InAs quantum dots containing a misfit defect state

  Chen, J-F., Yang, C. H., Hsu, R. M. & Wang, U. S., 9 Apr 2009, In: Journal of Applied Physics. 105, 6, 063705.

  Research output: Contribution to journal › Article › peer-review

  • electron emission 100%
  • quantum dots 78%
  • annealing 61%
  • defects 56%
  • thermal emission 46%
  4 Scopus citations

• Spectral shape and broadening of emission from AlGaInP light-emitting diodes

  Chen, N. C., Lien, W. C., Yang, Y. K., Shen, C., Wang, Y. S. & Chen, J-F., 23 Oct 2009, In: Journal of Applied Physics. 106, 7, 074514.

  Research output: Contribution to journal › Article › peer-review

  • emission spectra 100%
  • light emitting diodes 89%
  • spontaneous emission 55%
  • probability distribution functions 34%
  • quantum wells 21%
  20 Scopus citations

• Structural and optical properties of buried InAs/GaAs quantum dots on GaAsSb buffer layer

  Wu, Y. H., Chang, L., Lin, P. Y., Chiang, C. H., Chen, J-F. & Chi, T. W., 21 Sep 2009, In: Journal of Physics D: Applied Physics. 42, 18, 5 p., 185106.

  Research output: Contribution to journal › Article › peer-review

  • Photoluminescence 100%
  • Buffer layers 87%
  • Optical properties 76%
  • Structural properties 66%
  • Quantum Dot 54%

• Study of efficient and stable organic light-emitting diodes with 2-methyl-9,10-di(2-naphthyl)anthracene as hole-transport material by admittance spectroscopy

  Ho, M. H., Hsieh, M. T., Lin, K. H., Chen, T-M., Chen, J-F. & Chen, C. H., 23 Jan 2009, In: Applied Physics Letters. 94, 2, 023306.

  Research output: Contribution to journal › Article › peer-review

  • anthracene 100%
  • electrical impedance 85%
  • light emitting diodes 65%
  • spectroscopy 42%
  • control equipment 25%
  26 Scopus citations

• Study of electrical characterization of 2-methyl-9, 10-di (2-naphthyl)anthracene doped with tungsten oxide as hole-transport layer

  Hsieh, M. T., Ho, M. H., Lin, K. H., Chen, J-F., Chen, T-M. & Chen, C. H., 31 Jul 2009, In: Applied Physics Letters. 95, 3, 033501.

  Research output: Contribution to journal › Article › peer-review

  • tungsten oxides 100%
  • anthracene 96%
  • characterization 43%
  • power efficiency 30%
  • electrical impedance 27%
  9 Scopus citations
• 2008

  Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence

  Hsu, C. C., Hsu, R-Q., Wu, Y. H., Chi, T. W., Chiang, C. H., Chen, J-F. & Chang, M. N., 1 Oct 2008, In: Ultramicroscopy. 108, 11, p. 1495-1499 5 p.

  Research output: Contribution to journal › Article › peer-review

  • Photoluminescence 100%
  • Transmission electron microscopy 63%
  • Quantum Dot 54%
  • Optical properties 51%
  • quantum dots 47%
  3 Scopus citations

• Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dots

  Chen, J-F., Chiang, C. H., Wu, Y. H., Chang, L. & Chi, J. Y., 15 Jul 2008, In: Journal of Applied Physics. 104, 2, 5 p., 023509.

  Research output: Contribution to journal › Article › peer-review

  • antimony 100%
  • quantum dots 69%
  • luminescence 68%
  • surfactants 17%
  • photoluminescence 12%
  9 Scopus citations

• Effect of nitrogen incorporated methods on optical properties of InAs/GaAs quantum dots

  Chiung-Chih, H., Ray-Quen, H., Yue-Han, W., Chen, J-F., Tung-Wei, C., Chen-Hao, C. & Mao-Nan, C., 1 Aug 2008, In: Microscopy and Microanalysis. 14, SUPPL. 2, p. 356-357 2 p.

  Research output: Contribution to journal › Article › peer-review

• Electrical characterization of organic light-emitting diodes using dipotassium phthalate as n -type dopant

  Ho, M. H., Hsieh, M. T., Chen, T-M., Chen, J-F., Hwang, S. W. & Chen, C. H., 15 Sep 2008, In: Applied Physics Letters. 93, 8, 083505.

  Research output: Contribution to journal › Article › peer-review

  • phthalates 100%
  • light emitting diodes 57%
  • power efficiency 41%
  • characterization 39%
  • electrical impedance 37%
  15 Scopus citations

• Electrical properties of metal-silicon nitride-hydrogenated amorphous silicon capacitor elucidated using admittance spectroscopy

  Hsieh, M. T., Chen, J-F., Yen, K. H., Zan, H-W., Chang, C. C., Chen, C. H., Shih, C. C. & Lee, Y. S., 19 Dec 2008, In: Japanese journal of applied physics. 47, 12, p. 8714-8718 5 p.

  Research output: Contribution to journal › Article › peer-review

  • metal nitrides 100%
  • Amorphous silicon 98%
  • Silicon nitride 86%
  • Spectroscopy 80%
  • Electric properties 76%
  1 Scopus citations

• Electron emissions in InAs quantum dots containing a nitrogen incorporation induced defect state: The influence of thermal annealing

  Chen, J-F., Yu, C. C. & Yang, C. H., 10 Dec 2008, In: Nanotechnology. 19, 49, 495201.

  Research output: Contribution to journal › Article › peer-review

  • Electron emission 100%
  • Electron Emission 81%
  • Annealing 59%
  • Nitrogen 55%
  • Quantum Dot 52%

• Investigations on highly stable thermal characteristics of a dilute In_0.2Ga_0.8AsSb/GaAs doped-channel field-effect transistor

  Su, K. H., Hsu, W. C., Lee, C. S., Hu, P. J., Wu, Y. H., Chang, L., Hsiao, R. S., Chen, J-F. & Chi, T. W., 1 Apr 2008, In: Semiconductor Science and Technology. 23, 4, p. 1-6 6 p., 045012.

  Research output: Contribution to journal › Article › peer-review

  • Field effect transistors 100%
  • Field Effect 92%
  • field effect transistors 73%
  • Semiconductor quantum wells 73%
  • Molecular beam epitaxy 72%
  5 Scopus citations

• Strain relaxation in InAs self-assembled quantum dots induced by a high N incorporation

  Chen, J-F., Yang, C. H., Wu, Y. H., Chang, L. & Chi, J. Y., 15 Nov 2008, In: Journal of Applied Physics. 104, 10, 5 p., 103717.

  Research output: Contribution to journal › Article › peer-review

  • quantum dots 100%
  • defects 35%
  • electrical impedance 22%
  • depletion 18%
  • inhomogeneity 18%
  2 Scopus citations
• 2007

  Analysis of strain relaxation in GaAsInGaAsGaAs structures by spectroscopy of relaxation-induced states

  Chen, J-F., Chiang, C. H., Hsieh, P. C. & Wang, J. S., 26 Feb 2007, In: Journal of Applied Physics. 101, 3, 033702.

  Research output: Contribution to journal › Article › peer-review

  • traps 100%
  • spectroscopy 69%
  • capacitance 19%
  • point defects 11%
  • induction 11%
  8 Scopus citations

• A novel dilute antimony channel In_0.2Ga_0.8AsSb/ GaAs HEMT

  Su, K. H., Hsu, W. C., Lee, C. S., Wu, T. Y., Wu, Y. H., Chang, L., Hsiao, R. S., Chen, J-F. & Chi, W. C., 1 Feb 2007, In: IEEE Electron Device Letters. 28, 2, p. 96-99 4 p., 4068971.

  Research output: Contribution to journal › Article › peer-review

  • Antimony 100%
  • High electron mobility transistors 79%
  • Compound Mobility 52%
  • Atoms 47%
  • Electron transport properties 46%
  12 Scopus citations

• Deep-level emissions in GaAsN/GaAs structures grown by metal organic chemical vapor deposition

  Chen, J-F., Ke, C. T., Hsieh, P. C., Chiang, C. H., Lee, W-I. & Lee, S. C., 2 Aug 2007, In: Journal of Applied Physics. 101, 12, 123515.

  Research output: Contribution to journal › Article › peer-review

  • metalorganic chemical vapor deposition 100%
  • quantum wells 40%
  • valence 28%
  • conduction bands 11%
  • energy levels 10%
  10 Scopus citations

• Electron emission properties of relaxation-induced traps in InAs/GaAs quantum dots and the effect of electronic band structure

  Chen, J-F. & Wang, J. S., 10 Sep 2007, In: Journal of Applied Physics. 102, 4, 043705.

  Research output: Contribution to journal › Article › peer-review

  • electron emission 100%
  • quantum dots 78%
  • traps 76%
  • electronics 52%
  • energy 19%
  16 Scopus citations

• Evidence for the electron trap state associated with N-rich clusters in InGaAsN/GaAs quantum wells

  Chen, J-F., Hsieh, P. C., Hsiao, R. S., Wang, J. S. & Chi, J. Y., 13 Jun 2007, In: Nanotechnology. 18, 23, 235402.

  Research output: Contribution to journal › Article › peer-review

  • Electron traps 100%
  • Semiconductor quantum wells 83%
  • Electron Trap 75%
  • Ground state 48%
  • Electrons 43%
  1 Scopus citations

• Highly stable thermal characteristics of a novel in_0.3Ga _0.7As_0.99N_0.01(Sb)/GaAs high-electron-mobility transistor

  Su, K. H., Hsu, W. C., Lee, C. S., Hu, P. J., Hsiao, R. S., Chen, J-F. & Chi, T. W., 24 Apr 2007, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46, 4 B, p. 2344-2347 4 p.

  Research output: Contribution to journal › Article › peer-review

  • High electron mobility transistors 100%
  • transconductance 94%
  • high electron mobility transistors 89%
  • linearity 82%
  • surfactants 82%
  3 Scopus citations

• Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures

  Wang, J. S., Yu, S. H., Lin, Y. R., Lin, H. H., Yang, C. S., Chen, T. T., Chen, Y. F., Shu, G. W., Shen, J. L., Hsiao, R. S., Chen, J-F. & Chi, J. Y., 10 Jan 2007, In: Nanotechnology. 18, 1, 015401.

  Research output: Contribution to journal › Article › peer-review

  • Photoluminescence 100%
  • Blue shift 78%
  • Optical properties 76%
  • Structural properties 66%
  • Multilayers 59%
  15 Scopus citations

• Relaxation-induced lattice misfits and their effects on the emission properties of InAs quantum dots

  Chen, J-F., Wang, Y. Z., Chiang, C. H., Hsiao, R. S., Wu, Y. H., Chang, L., Wang, J. S., Chi, T. W. & Chi, J. Y., 5 Sep 2007, In: Nanotechnology. 18, 35, p. 1-7 7 p., 355401.

  Research output: Contribution to journal › Article › peer-review

  • Excited states 100%
  • Conduction bands 68%
  • Electrons 60%
  • Relaxation 55%
  • Quantum Dot 53%
  9 Scopus citations
• 2006

  Comparative study of single and multiemissive layers in inverted white organic light-emitting devices

  Chu, T. Y., Chen, J-F., Chen, S. Y. & Chen, C. H., 21 Sep 2006, In: Applied Physics Letters. 89, 11, 113502.

  Research output: Contribution to journal › Article › peer-review

  • luminance 100%
  • life (durability) 63%
  27 Scopus citations

• Effect of growth rate on the composition fluctuation of InGaAsN/GaAs single quantum wells

  Chen, J-F., Hsiao, R. S., Hsieh, P. C., Wang, J. S. & Chi, J. Y., 11 Jul 2006, In: Journal of Applied Physics. 99, 12, 123718.

  Research output: Contribution to journal › Article › peer-review

  • quantum wells 100%
  • electron states 85%
  • electrical impedance 54%
  • photoluminescence 36%
  • ground state 34%
  7 Scopus citations

• Effect of incorporating an InAlAs layer on electron emission in self-assembled InAs quantum dots

  Chen, J-F., Hsiao, R. S., Hsieh, M. F., Wang, J. S. & Chi, J. Y., 24 Jan 2006, In: Journal of Applied Physics. 99, 1, 014303.

  Research output: Contribution to journal › Article › peer-review

  • electron emission 100%
  • quantum dots 78%
  • excitation 49%
  • conduction bands 43%
  • photoluminescence 35%
  8 Scopus citations

• Evolution of carrier distribution and defects in InGaAsN/GaAs quantum wells with composition fluctuation

  Chen, J-F., Hsiao, R. S., Hsieh, P. C., Chen, Y. C., Wang, J. S. & Chi, J. Y., 7 Jul 2006, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 7, p. 5662-5666 5 p.

  Research output: Contribution to journal › Article › peer-review

  • Semiconductor quantum wells 100%
  • Deep level transient spectroscopy 75%
  • quantum wells 49%
  • Defects 43%
  • Chemical analysis 41%
  4 Scopus citations

• Evolution of conduction and interface states of laterally wet-oxidized AlGaAs with oxidation time

  Chen, J-F., Hsiao, R. S., Hung, W. K., Wang, J. S., Chi, J. Y., Yu, H-C. & Su, Y. K., 15 Jan 2006, In: Journal of Applied Physics. 99, 2, 023711.

  Research output: Contribution to journal › Article › peer-review

  • aluminum gallium arsenides 100%
  • oxidation 77%
  • conduction 70%
  • capacitance 28%
  • electrical impedance 18%
  6 Scopus citations

• Highly efficient and stable inverted bottom-emission organic light emitting devices

  Chu, T. Y., Chen, J-F., Chen, S. Y., Chen, C. J. & Chen, C. H., 14 Sep 2006, In: Applied Physics Letters. 89, 5, 053503.

  Research output: Contribution to journal › Article › peer-review

  • power efficiency 100%
  • ITO (semiconductors) 90%
  • brightness 75%
  • current density 62%
  • life (durability) 59%
  125 Scopus citations

• Highly power efficient organic light-emitting diodes with a p-doping layer

  Chang, C. C., Hsieh, M. T., Chen, J-F., Hwang, S. W. & Chen, C. H., 1 Dec 2006, In: Applied Physics Letters. 89, 25, 253504.

  Research output: Contribution to journal › Article › peer-review

  • phenyls 100%
  • light emitting diodes 72%
  • tungsten oxides 58%
  • power efficiency 52%
  • low voltage 44%
  142 Scopus citations