Keyphrases
Activation Energy
16%
Admittance Spectroscopy
28%
Alq3
13%
AlSb
42%
Annealing
9%
Band-to-band Tunneling
40%
Blue Shift
9%
Capacitance-voltage
11%
Carrier Depletion
14%
Carrier Distribution
10%
Conduction Band
11%
Deep Level Transient Spectroscopy
12%
Doped Layers
9%
Double Barrier
12%
Electrical Characterization
12%
Electrical Properties
13%
Electron Emission
15%
GaAs Quantum Dot
23%
GaAs Quantum Well
24%
Gallium Arsenide
88%
GaSb
57%
High Efficiency
17%
InAs Quantum Dots
34%
Indium Gallium Nitride (InGaN)
10%
InGaAs
32%
InGaAsN
20%
Light-emitting Diodes
16%
Low Temperature
21%
Metal-organic Chemical Vapor Deposition (MOCVD)
12%
Methyl
11%
Molecular Beam Epitaxy
44%
Naphthyl
17%
Ni-P
15%
Organic Light-emitting Diodes
30%
P-type Doping
12%
Photoluminescence
16%
Power Output
9%
Quantum Dots
51%
Quantum Well
11%
Room Temperature
15%
Self-assembled Quantum Dots
12%
Single Quantum Well
9%
SnTe
14%
Strain Relaxation
25%
Temperature Effect
14%
Tris
10%
Tungsten Oxide
9%
Tunnel Diode
14%
Tunneling
12%
Vertical-cavity Surface-emitting Laser (VCSEL)
15%
Engineering
Activation Energy
7%
Active Region
6%
Band Gap
5%
Band Structure
5%
Cavity Surface
10%
Conduction Band
9%
Critical Thickness
5%
Current-Voltage Characteristic
12%
Deep Level
20%
Dopants
7%
Electron Emission
14%
Electron Injection
6%
Emitting Device
11%
Emitting Laser
12%
Gaas Layer
7%
Gaas Substrate
8%
Gallium Arsenide
92%
Ground State
8%
Indium Gallium Arsenide
30%
Light-Emitting Diode
19%
Low-Temperature
22%
Negative Differential Resistance
8%
Optoelectronics
5%
Organic Light-Emitting Diode
21%
Output Power
6%
Phase Composition
12%
Pressure Ratio
5%
Quantum Dot
56%
Quantum Well
39%
Room Temperature
17%
Strain Relaxation
14%
Superlattice
5%
Temperature Dependence
7%
Threshold Current Density
5%
Transients
11%
Tunnel Construction
41%
Ultraviolet Light
6%
Valence Band
10%
Material Science
Activation Energy
18%
Aluminum
5%
Annealing
12%
Antimony
7%
Band Offset
5%
Capacitance
41%
Cathode
8%
Chemical Vapor Deposition
7%
Current Voltage Characteristics
6%
Deep-Level Transient Spectroscopy
9%
Density
18%
Doping (Additives)
15%
Electron Transfer
10%
Electronic Circuit
10%
Gallium Arsenide
100%
Heterojunction
8%
Indium Gallium Arsenide
26%
Indium Tin Oxide
7%
Light-Emitting Diode
34%
Molecular Beam Epitaxy
31%
Organic Light-Emitting Diode System
8%
Oxide Compound
11%
Phase Composition
5%
Photoluminescence
26%
Quantum Dot
60%
Quantum Well
22%
Schottky Diode
15%
Surface (Surface Science)
12%
Transmission Electron Microscopy
6%
Tungsten
9%
