Keyphrases
Vertical-cavity Surface-emitting Laser (VCSEL)
100%
Gallium Arsenide
35%
Quantum Dots
35%
Oxides
34%
Quantum Dot Light-emitting Diodes
27%
InGaAs
25%
Power Output
23%
GaAs Quantum Well
22%
Photonic Crystal
21%
Quantum Dot Lasers
20%
InGaAs Quantum Dots
17%
Proton
16%
InGaAsN
16%
ZnO Nanorods
16%
GaAs Substrate
15%
Metal-organic Chemical Vapor Deposition (MOCVD)
15%
Room Temperature
14%
Photodetector
14%
Metal Organic Vapor Phase Epitaxy (MOVPE)
13%
ZnCdSe
13%
GaAsSb
12%
Fiber Optic Applications
11%
Lasing Wavelength
11%
ZnS Quantum Dots
11%
Slope Efficiency
11%
UV Photodetector
11%
Non-volatile Memory
10%
High Thermal Stability
9%
InAs Quantum Dots
9%
Thick Shell
9%
Composition Gradient
9%
Light Injection
9%
Low-frequency Noise
9%
Poly(2-hydroxyethyl methacrylate)
9%
Laterally Bridged
9%
Side-mode Suppression Ratio
9%
Eye Diagram
9%
Low Threshold Voltage
9%
Active Regions
9%
High Temperature
8%
Threshold Current
8%
Long Wavelength
8%
Threshold Current Density
8%
10Gbps
8%
Memory Device
8%
Growth Temperature
7%
Molecular Beam Epitaxy
7%
Distributed Bragg Reflector
7%
Memory Effect
7%
Green Emission
7%
Engineering
Emitting Laser
88%
Cavity Surface
84%
Quantum Dot
65%
Gallium Arsenide
42%
Light-Emitting Diode
38%
Indium Gallium Arsenide
38%
Quantum Well
26%
Output Power
22%
Photonics
22%
Current Threshold
15%
Room Temperature
14%
Photometer
14%
Gaas Substrate
14%
Nanorod
12%
Threshold Current Density
12%
Fiber Optics
11%
Phase Composition
10%
Active Region
9%
Band Gap
9%
Eye Diagram
8%
Chemical Vapor Deposition
7%
Vapor Deposition
7%
Green Emission
7%
Bragg Cell
6%
Frequency Noise
6%
Resonant Cavity
6%
Continuous Wave
6%
Emission Wavelength
5%
Photodetector
5%
Current Efficiency
5%
Growth Temperature
5%
Oxide Layer
5%
Material Science
Surface (Surface Science)
42%
Gallium Arsenide
37%
Quantum Dot
36%
Light-Emitting Diode
32%
ZnO
29%
Oxide Compound
27%
Photonic Crystal
19%
Quantum Well
18%
Density
17%
Nanorod
16%
Indium Gallium Arsenide
16%
Indium Tin Oxide
13%
Thin-Film Transistor
12%
Film
12%
Fiber Optics
9%
Memory Effect
7%
Thin Films
7%
Annealing
7%
Indium
6%
Oxygen Vacancy
6%
Schottky Barrier
6%
Superlattice
6%
Nanoparticle
6%
Dielectric Material
6%
Hydrothermal Synthesis
5%
Gallium
5%
Oxidation Reaction
5%