Keyphrases
Amorphous InGaZnO (a-IGZO)
18%
Annealing
8%
Channel Length
19%
Charge Plasma
14%
Charging Damage
11%
Current Ratio
11%
Device Performance
12%
Double Gate
19%
Electrical Characteristics
9%
Field-induced
10%
Film Profile
9%
Film Profile Engineering
18%
Gate Oxide
10%
Gate-all-around
18%
Germanium
9%
Germanium Quantum Dots
16%
High Performance
15%
High Vacuum Chemical Vapor Deposition
11%
Inverter
9%
Junction-less
14%
MOSFET
20%
N-channel
19%
Nanowire Channel
25%
Negative Bias Temperature Instability
10%
Nitrided Oxide
11%
NMOSFET
12%
NWFET
9%
Off-state Leakage Current
12%
On-state Current
19%
Oxides
16%
P-channel
23%
Plasma-induced Damage
9%
Poly-Si
28%
Poly-Si Nanowire
36%
Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs)
37%
Polysilicon
36%
Schottky Barrier
16%
Self-aligned
12%
Si1-xGex
9%
SiGe
11%
Silica
12%
Silicon Nanowire Transistor
11%
Silicon Nanowires (SiNWs)
18%
Silicon Nitride
17%
Subthreshold Swing
17%
Thin-film Transistors
52%
Threshold Voltage
11%
Transistor
17%
Ultra-thin Gate Oxide
17%
Ultrathin
15%
Material Science
Annealing
8%
Boron
10%
Capacitance
6%
Capacitor
7%
Carbon Nanotube
5%
Chemical Vapor Deposition
8%
Complementary Metal-Oxide-Semiconductor Device
6%
Density
13%
Dielectric Material
9%
Doping (Additives)
5%
Electrical Property
8%
Field Effect Transistor
23%
Film
36%
Gallium
5%
Germanium
17%
Heterojunction
7%
Hot Carrier
11%
Indium
5%
Lithography
8%
Metal Oxide
10%
Metal-Oxide-Semiconductor Field-Effect Transistor
27%
Nanosphere
6%
Nanowire
64%
Negative-Bias Temperature Instability
8%
Nitride Compound
10%
Oxidation Reaction
8%
Oxide Compound
56%
Oxide Semiconductor
8%
Phase Composition
5%
Quantum Dot
20%
Schottky Barrier
15%
Silicon
51%
Silicon Nitride
16%
Surface (Surface Science)
8%
Thin Films
5%
Thin-Film Transistor
87%
Transistor
46%
Zinc Oxide
6%
ZnO
9%
Engineering
Antenna
10%
Capping Layer
6%
Channel Length
20%
Chemical Vapor Deposition
12%
Complementary Metal-Oxide-Semiconductor
5%
Compressive Strain
5%
Current Drain
6%
Current Drive
8%
Current Ratio
15%
Device Performance
10%
Drain Region
5%
Engineering
16%
Experimental Result
5%
Field-Effect Transistor
15%
Gate Bias
5%
Gate Oxide
27%
Induced Damage
7%
Inverter
9%
Low-Temperature
10%
Metal Gate
5%
Metal Oxide Semiconductor
6%
Metal-Oxide-Semiconductor Field-Effect Transistor
33%
Nanoscale
8%
Nanowire
38%
Negative-Bias Temperature Instability
9%
Nitride
7%
Oxide Thickness
7%
Passivation
7%
Photoresist
5%
Polycrystalline
5%
Polysilicon
100%
Quantum Dot
15%
Schottky Barrier
16%
Si Nanowires
30%
Side Wall
9%
Silicon Dioxide
12%
Test Structure
5%
Thin-Film Transistor
77%
Vapor Deposition
12%
