Keyphrases
Amorphous InGaZnO (a-IGZO)
18%
Annealing
9%
Channel Length
20%
Charge Plasma
14%
Charging Damage
11%
Current Ratio
12%
Device Performance
12%
Double Gate
19%
Electrical Characteristics
9%
Field-induced
11%
Film Profile
9%
Film Profile Engineering
18%
Gate Oxide
9%
Gate-all-around
19%
Germanium Quantum Dots
14%
High Performance
16%
High Vacuum Chemical Vapor Deposition
12%
Inverter
9%
Junction-less
15%
MOSFET
20%
N-channel
18%
Nanowire Channel
26%
Negative Bias Temperature Instability
10%
Nitrided Oxide
11%
NMOSFET
13%
NWFET
10%
Off-state Leakage Current
12%
On-state Current
19%
Oxides
17%
P-channel
23%
Plasma-induced Damage
9%
Poly-Si
29%
Poly-Si Nanowire
38%
Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs)
35%
Polysilicon
35%
Schottky Barrier
16%
Self-aligned
12%
Si1-xGex
10%
SiGe
12%
Silica
13%
Silicon Nanowire Transistor
11%
Silicon Nanowires (SiNWs)
19%
Silicon Nitride
16%
Subthreshold Swing
16%
Thin-film Transistors
52%
Threshold Voltage
11%
Transistor
18%
Ultra-thin Gate Oxide
18%
Ultrathin
16%
ZnO Thin Film Transistor
8%
Material Science
Annealing
8%
Boron
10%
Capacitance
6%
Capacitor
7%
Carbon Nanotube
5%
Chemical Vapor Deposition
9%
Complementary Metal-Oxide-Semiconductor Device
6%
Density
13%
Dielectric Material
10%
Doping (Additives)
5%
Electrical Property
8%
Field Effect Transistor
24%
Film
35%
Germanium
13%
Heterojunction
7%
Hot Carrier
12%
Lithography
8%
Metal Oxide
10%
Metal-Oxide-Semiconductor Field-Effect Transistor
28%
Nanosphere
6%
Nanowire
67%
Negative-Bias Temperature Instability
9%
Nitride Compound
10%
Oxidation Reaction
9%
Oxide Compound
57%
Oxide Semiconductor
8%
Phase Composition
5%
Quantum Dot
15%
Schottky Barrier
16%
Silicide
5%
Silicon
51%
Silicon Nitride
15%
Surface (Surface Science)
8%
Thin-Film Transistor
85%
Transistor
47%
Zinc Oxide
5%
ZnO
9%
Engineering
Antenna
10%
Capping Layer
7%
Channel Length
21%
Chemical Vapor Deposition
12%
Complementary Metal-Oxide-Semiconductor
5%
Compressive Strain
6%
Current Drain
6%
Current Drive
9%
Current Ratio
15%
Device Performance
10%
Drain Region
5%
Engineering
16%
Experimental Result
5%
Field Effect Transistor
5%
Field-Effect Transistor
16%
Gate Bias
5%
Gate Oxide
28%
Induced Damage
7%
Inverter
10%
Low-Temperature
9%
Metal Gate
6%
Metal Oxide Semiconductor
6%
Metal-Oxide-Semiconductor Field-Effect Transistor
33%
Nanoscale
9%
Nanowire
39%
Negative-Bias Temperature Instability
10%
Nitride
8%
Oxide Thickness
8%
Passivation
6%
Photoresist
5%
Polycrystalline
5%
Polysilicon
100%
Quantum Dot
11%
Schottky Barrier
17%
Si Nanowires
32%
Side Wall
9%
Silicon Dioxide
12%
Test Structure
6%
Thin-Film Transistor
75%
Vapor Deposition
12%
