Research output per year
Research output per year
Search results
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2017
Corrections to AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications
Lin, Y. K., Noda, S., Lo, H. C., Liu, S. C., Wu, C. H., Wong, Y. Y., Luc, Q. H., Chang, P. C., Hsu, H.-T., Samukawa, S. & Chang, E. Y., Jan 2017, In: Ieee Electron Device Letters. 38, 1, p. 149 1 p., 7802679.Research output: Contribution to journal › Letter › peer-review