Material Science
Transistor
100%
Electron Mobility
94%
Gallium Arsenide
60%
Film
44%
Aluminum Nitride
38%
Density
38%
Indium Gallium Arsenide
34%
Heterojunction
31%
Capacitor
29%
Oxide Semiconductor
27%
Metal Oxide
26%
Al2O3
24%
Surface (Surface Science)
24%
Dielectric Material
23%
Buffer Layer
21%
Oxide Compound
19%
Chemical Vapor Deposition
19%
Ferroelectric Material
19%
Electrical Property
19%
Metal-Organic Chemical Vapor Deposition
17%
Capacitance
16%
Silicon
16%
Sapphire
15%
Field Effect Transistor
14%
Annealing
14%
Nanowire
13%
Schottky Barrier
13%
Silicon Nitride
13%
Solar Cell
12%
Composite Material
10%
Indium
10%
Metal-Oxide-Semiconductor Field-Effect Transistor
10%
Epitaxial Film
10%
Aluminium Gallium Arsenide
9%
Electronic Circuit
9%
Molecular Beam Epitaxy
9%
Contact Resistance
8%
Transmission Electron Microscopy
8%
Thermal Stability
8%
Surface Morphology
8%
Epilayers
8%
Phase Composition
7%
Thin Films
7%
Materials Property
7%
Nitride Compound
7%
Epitaxy
7%
Monolayers
6%
Power Device
6%
Surface Roughness
6%
Quantum Well
6%
Keyphrases
GaN HEMT
90%
AlGaN-GaN
59%
High Electron Mobility Transistor
57%
Gallium Arsenide
55%
Metal-organic Chemical Vapor Deposition (MOCVD)
40%
InGaAs
33%
Si Substrate
30%
Aluminum Oxide
26%
Enhancement-mode (E-mode)
25%
HfO2
23%
GaN MIS-HEMT
23%
Electrical Characteristics
23%
Ohmic Contact
19%
GaAs Substrate
19%
InP HEMT
19%
Metamorphic High Electron Mobility Transistor (mHEMT)
18%
High Performance
18%
Metal-oxide-semiconductor Capacitor (MOSCAP)
18%
Annealing
18%
Device Performance
17%
InGaP
17%
GaSb
15%
Electrical Properties
15%
Threshold Voltage
13%
Transconductance
13%
Flip chip
13%
Low Noise
13%
Metal-insulator-semiconductor
13%
Buffer Layer
12%
Silicon Nitride
12%
RF Performance
12%
Gate Length
12%
Transistor Device
12%
Metallized
11%
Heterostructure
11%
Power Added Efficiency
11%
MESFET
11%
Drain Current
11%
Logic Application
10%
AlN Buffer Layer
10%
Breakdown Voltage
10%
Device Application
10%
Ka-band
10%
Power Output
10%
On-resistance
10%
Gate Dielectric
10%
Band Application
10%
GaN-on-Si
10%
Diffusion Barrier
10%
Schottky Contact
10%
Engineering
Gallium Arsenide
57%
Indium Gallium Arsenide
48%
Metal Oxide Semiconductor
26%
Heterojunctions
26%
Cutoff Frequency
26%
Nitride
26%
Current Drain
23%
Breakdown Voltage
21%
Solar Cell
19%
Device Performance
19%
Si Substrate
19%
Output Power
18%
Gate Length
17%
Dielectrics
17%
Metal-Oxide-Semiconductor Field-Effect Transistor
16%
Chemical Vapor Deposition
16%
Noise Figure
16%
Gaas Substrate
15%
Power Added Efficiency
15%
Ohmic Contacts
15%
Current Gain
15%
Metallizations
14%
Vapor Deposition
14%
Buffer Layer
14%
Drain Bias
13%
Metal Organic Chemical Vapor Deposition
13%
Power Density
13%
Gate Dielectric
13%
Interconnects
13%
Atomic Layer Deposition
13%
Passivation
12%
Field-Effect Transistor
12%
Gate Stack
12%
Diffusion Barrier
12%
Nanowire
12%
Max
12%
Field Effect Transistor
12%
Barrier Layer
11%
Power Device
11%
Schottky Barrier
11%
Aluminium Gallium Arsenide
11%
Millimeter Wave
11%
Application Logic
10%
Radio Frequency
9%
Monolithic Microwave Integrated Circuits
9%
Annealing Temperature
9%
Quantum Well
9%
Epitaxial Film
9%
Ka-Band
9%
Wireless Communication
8%