Material Science
Transistor
100%
Electron Mobility
93%
Gallium Arsenide
54%
Film
40%
Aluminum Nitride
36%
Density
35%
Indium Gallium Arsenide
31%
Heterojunction
29%
Capacitor
27%
Oxide Semiconductor
25%
Metal Oxide
24%
Dielectric Material
23%
Surface (Surface Science)
22%
Al2O3
22%
Ferroelectric Material
21%
Buffer Layer
19%
Oxide Compound
18%
Chemical Vapor Deposition
17%
Electrical Property
16%
Silicon
16%
Metal-Organic Chemical Vapor Deposition
16%
Capacitance
14%
Sapphire
13%
Field Effect Transistor
13%
Metal-Oxide-Semiconductor Field-Effect Transistor
13%
Annealing
13%
Nanowire
12%
Schottky Barrier
12%
Silicon Nitride
11%
Solar Cell
11%
Indium
11%
Composite Material
10%
Electronic Circuit
9%
Epitaxial Film
9%
Thermal Stability
8%
Aluminium Gallium Arsenide
8%
Transmission Electron Microscopy
8%
Contact Resistance
8%
Molecular Beam Epitaxy
8%
Thin Films
8%
Epitaxy
7%
Materials Property
7%
Surface Morphology
7%
Epilayers
7%
Phase Composition
7%
Nitride Compound
6%
Thin-Film Transistor
6%
Power Device
6%
X-Ray Diffraction
6%
Monolayers
6%
Keyphrases
GaN HEMT
92%
AlGaN-GaN
58%
High Electron Mobility Transistor
57%
Gallium Arsenide
50%
Metal-organic Chemical Vapor Deposition (MOCVD)
36%
InGaAs
30%
Si Substrate
29%
Enhancement-mode (E-mode)
24%
Aluminum Oxide
24%
GaN MIS-HEMT
21%
HfO2
21%
Electrical Characteristics
21%
Ohmic Contact
18%
GaAs Substrate
17%
InP HEMT
17%
Metamorphic High Electron Mobility Transistor (mHEMT)
17%
Device Performance
16%
High Performance
16%
Metal-oxide-semiconductor Capacitor (MOSCAP)
16%
Annealing
16%
InGaP
15%
Metal-insulator-semiconductor
14%
GaSb
14%
Electrical Properties
14%
Threshold Voltage
13%
Low Noise
13%
Transconductance
12%
Gate Length
12%
Ka-band
12%
Buffer Layer
12%
Flip chip
12%
Band Application
11%
RF Performance
11%
Silicon Nitride
11%
Transistor Device
11%
Aluminum Gallium Nitride (AlGaN)
11%
Power Added Efficiency
10%
Metallized
10%
Breakdown Voltage
10%
On-resistance
10%
Heterostructure
10%
MESFET
10%
GaN-on-Si
10%
Drain Current
9%
Logic Application
9%
MOSFET
9%
AlN Buffer Layer
9%
Gate Dielectric
9%
Device Application
9%
InAlGaN
9%
Engineering
Gallium Arsenide
52%
Indium Gallium Arsenide
43%
Nitride
26%
Cutoff Frequency
25%
Metal Oxide Semiconductor
24%
Heterojunctions
24%
Breakdown Voltage
22%
Current Drain
22%
Device Performance
20%
Si Substrate
19%
Metal-Oxide-Semiconductor Field-Effect Transistor
19%
Solar Cell
17%
Output Power
17%
Ohmic Contacts
17%
Gate Length
17%
Dielectrics
16%
Chemical Vapor Deposition
16%
Gate Stack
15%
Noise Figure
15%
Power Added Efficiency
14%
Vapor Deposition
14%
Gate Dielectric
14%
Gaas Substrate
14%
Drain Bias
14%
Current Gain
13%
Metallizations
13%
Atomic Layer Deposition
13%
Passivation
13%
Buffer Layer
13%
Metal Organic Chemical Vapor Deposition
13%
Power Density
13%
Interconnects
12%
Barrier Layer
12%
Ka-Band
12%
Field-Effect Transistor
11%
Nanowire
11%
Radio Frequency
11%
Diffusion Barrier
11%
Max
11%
Power Device
11%
Schottky Barrier
11%
Field Effect Transistor
10%
Aluminium Gallium Arsenide
10%
Millimeter Wave
10%
Gate Bias
9%
Application Logic
9%
Passivation Layer
9%
Experimental Result
9%
Annealing Temperature
9%
Monolithic Microwave Integrated Circuits
8%
