Personal profile
Research Interests
InP, GaAs based compound materials and devices (HEMT, HBT) for wireless communication and sub-milimeterwave imaging applications
GaN based materials (MBE, MOCVD) and High frequency & High power electronics (HEMT) applications
III-V/ Si integration (Ge, SiGe, GaAs, InP) for logic applications
Advanced package (Flip chip) for high frequency and power applications
Experience
Education/Academic qualification
PhD, Materials Science and Engineering, University of Minnesota Twin Cities
External positions
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Collaborations and top research areas from the last five years
Projects
- 79 Finished
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開發應用於下世代通訊系統之高線性度氮化鎵射頻元件
Chang, E. Y. (PI)
1/08/24 → 31/07/25
Project: Government Ministry › Other Government Ministry Institute
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開發應用於下世代通訊系統之高線性度氮化鎵射頻元件
Chang, E. Y. (PI)
1/08/23 → 31/07/24
Project: Government Ministry › Other Government Ministry Institute
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臺瑞(SE)雙邊協議型擴充加值(add-on)國際合作研究計畫—具創新歐姆接觸材料與技術之毫米波/次毫米波氮化鎵高電子遷移率電晶體(3/5)
Chang, E. Y. (PI)
1/10/22 → 30/09/23
Project: Government Ministry › Other Government Ministry Institute
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新南向計畫之111年度研發菁英人才專班 (110年核定且已執行之碩博士班別)
Chang, E. Y. (PI)
1/08/22 → 31/07/23
Project: Government Ministry › Ministry of Education(Include School)
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開發應用於下世代通訊系統之高線性度氮化鎵射頻元件
Chang, E. Y. (PI)
1/08/22 → 31/07/23
Project: Government Ministry › Other Government Ministry Institute
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Characteristics of GaN MIS-HEMT with ZrO2/HfO2 Superlattice Gate Dielectric Layer
Chen, K. L., Chou, H., Lin, K. S., Chen, Y., Yang, H. C., Weng, Y. C., Yang, C. Y., Jang, W. Y., Chang, S. Z., Chang, E. Y. & Lin, C. H., 1 Jan 2026, In: ECS Journal of Solid State Science and Technology. 15, 1, 015007.Research output: Contribution to journal › Article › peer-review
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Cryogenic Temperature Electrical Characterization of Enhancement-Mode Thin Barrier AlGaN/GaN HEMT with Hybrid Ferroelectric Charge Trap Gate-Stack
Rai, R., Nguyen, K. Q., Ho, V. Q., Tran, H. D., Mazhari, B. & Chang, E. Y., 1 Apr 2026, In: IEEE Transactions on Electron Devices. 73, 4, p. 2478-2485 8 p.Research output: Contribution to journal › Article › peer-review
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Design of GaN HEMT Buck Converter for BCM Operation
Hsieh, Y. T., Chen, C. H., Chen, T. L., Chieng, W. H. & Chang, E. Y., Apr 2026, In: Energies. 19, 7, 1700.Research output: Contribution to journal › Article › peer-review
Open Access -
Effect of in-situ ozone annealing on top-gate atomic layer deposited InZnOx channel thin-film transistors on various underlying dielectric layers
Lin, G. H., Li, Y. T., Chen, Y., Yang, H. C., Chen, C. W., Chou, T. T., Kei, C. C., Jang, W. Y., Chang, S. Z., Chang, E. Y. & Lin, C. H., Feb 2026, In: Materials Science in Semiconductor Processing. 202, 110176.Research output: Contribution to journal › Article › peer-review
1 Scopus citations -
Efficiency-Based CLLC Bidirectional DC-DC Converter Using Copolar Switching
Hsieh, Y. T., Chen, C. H., Shieh, W. Y., Haung, C. C., Chieng, W. H. & Chang, E. Y., Apr 2026, In: Energies. 19, 8, 1820.Research output: Contribution to journal › Article › peer-review
Open Access
Prizes
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Outstanding Electrical Engineer Award, Chinese Institute of Electrical Engineering
Chang, E. Y. (Recipient), 2008
Prize: Honorary award
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Outstanding Research Award, National Science Council
Chang, E. Y. (Recipient), 2013
Prize: Honorary award
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Outstanding Research Award, National Science Council
Chang, E. Y. (Recipient), 2009
Prize: Honorary award
Activities
- 3 Invited talk