Projects per year
Personal profile
Research Interests
InP, GaAs based compound materials and devices (HEMT, HBT) for wireless communication and sub-milimeterwave imaging applications
GaN based materials (MBE, MOCVD) and High frequency & High power electronics (HEMT) applications
III-V/ Si integration (Ge, SiGe, GaAs, InP) for logic applications
Advanced package (Flip chip) for high frequency and power applications
Experience
Education/Academic qualification
PhD, Materials Science and Engineering, University of Minnesota Twin Cities
External positions
Fingerprint
- 1 Similar Profiles
Collaborations and top research areas from the last five years
-
開發應用於下世代通訊系統之高線性度氮化鎵射頻元件
Chang, E. Y. (PI)
1/08/24 → 31/07/25
Project: Government Ministry › Other Government Ministry Institute
-
開發應用於下世代通訊系統之高線性度氮化鎵射頻元件
Chang, E. Y. (PI)
1/08/23 → 31/07/24
Project: Government Ministry › Other Government Ministry Institute
-
臺瑞(SE)雙邊協議型擴充加值(add-on)國際合作研究計畫—具創新歐姆接觸材料與技術之毫米波/次毫米波氮化鎵高電子遷移率電晶體(3/5)
Chang, E. Y. (PI)
1/10/22 → 30/09/23
Project: Government Ministry › Other Government Ministry Institute
-
開發應用於下世代通訊系統之高線性度氮化鎵射頻元件
Chang, E. Y. (PI)
1/08/22 → 31/07/23
Project: Government Ministry › Other Government Ministry Institute
-
新南向計畫之111年度研發菁英人才專班 (110年核定且已執行之碩博士班別)
Chang, E. Y. (PI)
1/08/22 → 31/07/23
Project: Government Ministry › Ministry of Education(Include School)
-
A Long-Range, High-Efficiency Resonant Wireless Power Transfer via Imaginary Turn Ratio Air Voltage Transformer
Tang, H. C., Chen, C. H., Chang, E. Y., Yao, D. J., Chieng, W. H. & He, J. Y., Mar 2025, In: Energies. 18, 6, 1329.Research output: Contribution to journal › Article › peer-review
Open Access -
Direct Drive D-Mode GaN HEMT Switching Characteristics and Turn-Off Loss Reductions
Lai, J. S., Hsieh, H. C., Liu, C. Y., Chieng, W. H., Yang, C. Y., Hsu, C. S. & Chang, E. Y., 2025, In: IEEE Transactions on Power Electronics. 40, 4, p. 5190-5200 11 p.Research output: Contribution to journal › Article › peer-review
1 Scopus citations -
High-frequency characterization of AlGaN/GaN MIS-HEMTs and HEMTs at cryogenic temperatures
Lin, C. J., Chen, B. Y., Chen, K. M., Chen, Y. T., Huang, G. W. & Chang, E. Y., 1 Feb 2025, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 64, 2, 02SP02.Research output: Contribution to journal › Article › peer-review
-
High-Frequency Pulsed Laser Driver Using Complementary GaN HEMTs
Liu, C. Y., Lin, C.-H., Kuo, H.-C., Tang, L. C., Hong, Y. H., Tu, C. C., Chang, E. Y. & Chieng, W. H., 2025, In: IEEE Transactions on Power Electronics. 40, 2, p. 3370-3384 15 p.Research output: Contribution to journal › Article › peer-review
Open Access5 Scopus citations -
High-Power, High-Repetition Short-Pulse Laser Driver Using Direct-Drive D-Mode GaN HEMT
Liu, C. Y., Lin, C.-H., Kuo, H. C., Hong, Y. H., Chang, E. Y. & Chieng, W. H., 2025, In: IEEE Open Journal of Power Electronics. 6, p. 474-484 11 p.Research output: Contribution to journal › Article › peer-review
Prizes
-
Outstanding Electrical Engineer Award, Chinese Institute of Electrical Engineering
Chang, E. Y. (Recipient), 2008
Prize: Honorary award
-
Outstanding Research Award, National Science Council
Chang, E. Y. (Recipient), 2013
Prize: Honorary award
-
Outstanding Research Award, National Science Council
Chang, E. Y. (Recipient), 2009
Prize: Honorary award
Activities
- 3 Invited talk