Projects per year
Personal profile
Research Interests
InP, GaAs based compound materials and devices (HEMT, HBT) for wireless communication and sub-milimeterwave imaging applications
GaN based materials (MBE, MOCVD) and High frequency & High power electronics (HEMT) applications
III-V/ Si integration (Ge, SiGe, GaAs, InP) for logic applications
Advanced package (Flip chip) for high frequency and power applications
Experience
Dean of International College of Semiconductor Technology (2014-present)
Head of NCTU-TSMC Research center, National Chiao Tung University, Taiwan (2013-present)
Dean of Research and Development, NCTU (2011/02~2016/08)
Director, NCTU-TSMC Research Center (2013/05~present)
Head, Diamond Project, NCTU (2011/02~present)
Joint Professor, Dept. of Materials Science and Engineering and Dept. of Electronics Engineering, NCTU (2008/02~present)
Department Head, Dept. of Materials Science and Engineering, NCTU (2004/02~2008/02)
Dean, Office of International Affairs (2002/06~2004/01)
Professor, Dept. of Materials Science and Engineering, NCTU (1999/01~2008/02)
General Manager, Hexawave Inc., Taiwan (1997/12~1999/01)
Senior MTS, Microelectronics Division, Comsat Labs, USA (1988/05~1990/01)
Senior MTS, GaAs Component Division, Unisys Corp, USA (1985/12~1988/05)
Education/Academic qualification
PhD, Materials Science and Engineering, University of Minnesota Twin Cities
External positions
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Network
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
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臺瑞(SE)雙邊協議型擴充加值(add-on)國際合作研究計畫—具創新歐姆接觸材料與技術之毫米波/次毫米波氮化鎵高電子遷移率電晶體(3/5)
1/10/22 → 30/09/23
Project: Government Ministry › Other Government Ministry Institute
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開發應用於下世代通訊系統之高線性度氮化鎵射頻元件
1/08/22 → 31/07/23
Project: Government Ministry › Other Government Ministry Institute
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新南向計畫之111年度研發菁英人才專班 (110年核定且已執行之碩博士班別)
1/08/22 → 31/07/23
Project: Government Ministry › Ministry of Education(Include School)
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適用於無界限通訊之超高頻氮化鎵元件技術研發(1/2)
1/05/22 → 30/04/23
Project: Government Ministry › Other Government Ministry Institute
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印度理工學院雙邊研究合作計畫(第一年)
1/05/22 → 30/04/23
Project: Government Ministry › Ministry of Education(Include School)
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A Tall Gate Stem GaN HEMT with Improved Power Density and Efficiency at Ka-Band
Lee, P. H., Lin, Y. C., Hsu, H. T., Tsao, Y. F., Dee, C. F., Su, P. & Chang, E. Y., 2023, (Accepted/In press) In: IEEE Journal of the Electron Devices Society. p. 1 1 p.Research output: Contribution to journal › Article › peer-review
Open Access -
Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications
Hieu, L. T., Hsu, H. T., Chiang, C. H., Panda, D., Lee, C. T., Lin, C. H. & Chang, E. Y., Feb 2023, In: Semiconductor Science and Technology. 38, 2, 025006.Research output: Contribution to journal › Article › peer-review
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Nucleation and growth mechanism for atomic layer deposition of Al2O3on two-dimensional WS2monolayer
Lee, T. T., Chiranjeevulu, K., Pedaballi, S., Cott, D., Delabie, A., Dee, C. F. & Chang, E. Y., 1 Jan 2023, In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 41, 1, 013201.Research output: Contribution to journal › Article › peer-review
Open Access -
Radio Frequency Characteristics of InGaAs FE-FETs with Scaled Channel Length
Huang, P., Chen, M. Y., Luc, Q. H., Wu, J. Y., Tran, N. A. & Chang, E. Y., 1 Feb 2023, In: IEEE Transactions on Electron Devices. 70, 2, p. 443-448 6 p.Research output: Contribution to journal › Article › peer-review
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Study of p-GaN Gate MOS-HEMT with Al2O3 Insulator for High-Power Applications
Huang, K. N., Lin, Y. C., Wu, C. Y., Lee, J. H., Hsu, C. C., Yao, J. N., Chien, C. H. & Chang, E. Y., 2023, (Accepted/In press) In: Journal of Electronic Materials.Research output: Contribution to journal › Article › peer-review
Prizes
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Outstanding Electrical Engineer Award, Chinese Institute of Electrical Engineering
Chang, Edward Yi (Recipient), 2008
Prize: Honorary award
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Outstanding Research Award, National Science Council
Chang, Edward Yi (Recipient), 2013
Prize: Honorary award
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Outstanding Research Award, National Science Council
Chang, Edward Yi (Recipient), 2009
Prize: Honorary award
Activities
- 3 Invited talk
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ISCSI-VII/ISTDM 2016
Edward Yi Chang (Speaker)
7 Jun 2016Activity: Talk or presentation › Invited talk
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國際電子元件與材料研討會 IEDMS
Edward Yi Chang (Speaker)
19 Nov 2015Activity: Talk or presentation › Invited talk