Projects per year
Personal profile
Research Interests
InP, GaAs based compound materials and devices (HEMT, HBT) for wireless communication and sub-milimeterwave imaging applications
GaN based materials (MBE, MOCVD) and High frequency & High power electronics (HEMT) applications
III-V/ Si integration (Ge, SiGe, GaAs, InP) for logic applications
Advanced package (Flip chip) for high frequency and power applications
Experience
Dean of International College of Semiconductor Technology (2014-present)
Head of NCTU-TSMC Research center, National Chiao Tung University, Taiwan (2013-present)
Dean of Research and Development, NCTU (2011/02~2016/08)
Director, NCTU-TSMC Research Center (2013/05~present)
Head, Diamond Project, NCTU (2011/02~present)
Joint Professor, Dept. of Materials Science and Engineering and Dept. of Electronics Engineering, NCTU (2008/02~present)
Department Head, Dept. of Materials Science and Engineering, NCTU (2004/02~2008/02)
Dean, Office of International Affairs (2002/06~2004/01)
Professor, Dept. of Materials Science and Engineering, NCTU (1999/01~2008/02)
General Manager, Hexawave Inc., Taiwan (1997/12~1999/01)
Senior MTS, Microelectronics Division, Comsat Labs, USA (1988/05~1990/01)
Senior MTS, GaAs Component Division, Unisys Corp, USA (1985/12~1988/05)
Education/Academic qualification
PhD, University of Minnesota Twin Cities
External positions
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Network
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
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Development Of A Novel eEhancemnt-mode GaN Power Device
1/08/21 → 31/07/22
Project: Government Ministry › Ministry of Science and Technology
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Development of MmW/Sub-mmW GaN HEMT with Novel Ohmic Contact Materials and Technologies
1/10/20 → 30/09/21
Project: Government Ministry › Ministry of Science and Technology
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Development Of A Novel eEhancemnt-mode GaN Power Device
1/08/20 → 31/07/21
Project: Government Ministry › Ministry of Science and Technology
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Development of High Performance InGaAs NC-FinFET Energy Saving Devices
1/08/20 → 31/07/21
Project: Government Ministry › Ministry of Science and Technology
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Development of High Performance InGaAs NC-FinFET Energy Saving Devices
1/08/19 → 31/07/20
Project: Government Ministry › Ministry of Science and Technology
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Analysis of High-Frequency Behavior of AlGaN/GaN HEMTs and MIS-HEMTs under UV Illumination
Chen, K. M., Lin, C. J., Nagarajan, V., Chang, E. Y., Lin, C. W. & Huang, G. W., 2021, In: ECS Journal of Solid State Science and Technology. 10, 5, 055004.Research output: Contribution to journal › Article › peer-review
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Analysis of instability behavior and mechanism of e-mode gan power hemt with p-gan gate under off-state gate bias stress
Elangovan, S., Chang, E. Y. & Cheng, S., 2 Apr 2021, In: Energies. 14, 8, 2170.Research output: Contribution to journal › Article › peer-review
Open Access -
Derivation of the Resonance Mechanism for Wireless Power Transfer Using Class-E Amplifier
Liu, C. Y., Wang, G. B., Wu, C. C., Chang, E. Y., Cheng, S. & Chieng, W-H., 26 Jan 2021, In: Energies. 14, 3, 22 p., 632.Research output: Contribution to journal › Article › peer-review
Open Access2 Scopus citations -
Erratum: Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering (Applied Physics Letters (2021)118 (082902) DOI: 10.1063/5.0035335)
Tsai, S. L., Hoshii, T., Wakabayashi, H., Tsutsui, K., Chung, T. K., Chang, E. Y. & Kakushima, K., 8 Mar 2021, In: Applied Physics Letters. 118, 10, 109901.Research output: Contribution to journal › Comment/debate
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Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Recessed-Gate and GaO Gate Insulator Layer
Lee, H. Y., Chang, T. W., Chang, E. Y., Rorsman, N. & Lee, C. T., 2021, In: IEEE Journal of the Electron Devices Society. 9, p. 393-399 7 p., 9392009.Research output: Contribution to journal › Article › peer-review
Open Access
Prizes
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Outstanding Electrical Engineer Award, Chinese Institute of Electrical Engineering
Chang, Edward Yi (Recipient), 2008
Prize: Honorary award
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Outstanding Research Award, National Science Council
Chang, Edward Yi (Recipient), 2013
Prize: Honorary award
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Outstanding Research Award, National Science Council
Chang, Edward Yi (Recipient), 2009
Prize: Honorary award
Activities
- 3 Invited talk
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ISCSI-VII/ISTDM 2016
Edward Yi Chang (Speaker)
7 Jun 2016Activity: Talk or presentation › Invited talk
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國際電子元件與材料研討會 IEDMS
Edward Yi Chang (Speaker)
19 Nov 2015Activity: Talk or presentation › Invited talk