Projects per year
Personal profile
Research Interests
InP, GaAs based compound materials and devices (HEMT, HBT) for wireless communication and sub-milimeterwave imaging applications
GaN based materials (MBE, MOCVD) and High frequency & High power electronics (HEMT) applications
III-V/ Si integration (Ge, SiGe, GaAs, InP) for logic applications
Advanced package (Flip chip) for high frequency and power applications
Experience
Education/Academic qualification
PhD, Materials Science and Engineering, University of Minnesota Twin Cities
External positions
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- 10 Similar Profiles
Collaborations and top research areas from the last five years
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開發應用於下世代通訊系統之高線性度氮化鎵射頻元件
Chang, E. Y. (PI)
1/08/24 → 31/07/25
Project: Government Ministry › Other Government Ministry Institute
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開發應用於下世代通訊系統之高線性度氮化鎵射頻元件
Chang, E. Y. (PI)
1/08/23 → 31/07/24
Project: Government Ministry › Other Government Ministry Institute
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臺瑞(SE)雙邊協議型擴充加值(add-on)國際合作研究計畫—具創新歐姆接觸材料與技術之毫米波/次毫米波氮化鎵高電子遷移率電晶體(3/5)
Chang, E. Y. (PI)
1/10/22 → 30/09/23
Project: Government Ministry › Other Government Ministry Institute
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新南向計畫之111年度研發菁英人才專班 (110年核定且已執行之碩博士班別)
Chang, E. Y. (PI)
1/08/22 → 31/07/23
Project: Government Ministry › Ministry of Education(Include School)
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開發應用於下世代通訊系統之高線性度氮化鎵射頻元件
Chang, E. Y. (PI)
1/08/22 → 31/07/23
Project: Government Ministry › Other Government Ministry Institute
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Direct Drive D-Mode GaN HEMT Switching Characteristics and Turn-Off Loss Reductions
Lai, J. S., Hsieh, H. C., Liu, C. Y., Chieng, W. H., Yang, C. Y., Hsu, C. S. & Chang, E. Y., 2025, In: IEEE Transactions on Power Electronics. 40, 4, p. 5190-5200 11 p.Research output: Contribution to journal › Article › peer-review
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1kV Vertical Breakdown Voltage AlGaN/GaN HEMTs on Si with AlN and AlGaN/AlN Superlattice Buffer Engineering
Weng, Y. C., Yang, C. Y., Yang, T. Y., Chung, C. H., Chiang, T. H., Tung, F. C., Lai, S. H., Yu, H. W. & Chang, E. Y., 2024, 2024 16th IEEE International Conference on Semiconductor Electronics, ICSE 2024 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 78-80 3 p. (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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Adsorption and reversible detection of toxic halogens gases at room temperature by two-dimensional Al2SSe for occupational sustainability
Chang, Y. H. R., Yeoh, K. H., Jiang, J., Yu, H. W., Chang, E. Y., Dee, C. F. & Tuh, M. H., Jun 2024, In: Materials Today Communications. 39, 108623.Research output: Contribution to journal › Article › peer-review
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Analysis of breakdown voltage for GaN MIS-HEMT with various composite field plate configurations and passivation layers
Langpoklakpam, C., Hsiao, Y. K., Yi Chang, E., Lin, C. H. & Kuo, H. C., Jun 2024, In: Solid-State Electronics. 216, 108930.Research output: Contribution to journal › Article › peer-review
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An amperometric stability study of titanium dioxide nanoparticle layer on interdigitated electrode contact based on morphology, structure, and surface-induced response
Nassir, M. N. H. M., Nadzirah, S., Hamzah, A. A., Ismail, A. G., Yu, H. W., Chang, E. Y. & Dee, C. F., 15 Oct 2024, In: Thin Solid Films. 806, 140526.Research output: Contribution to journal › Article › peer-review
Prizes
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Outstanding Electrical Engineer Award, Chinese Institute of Electrical Engineering
Chang, E. Y. (Recipient), 2008
Prize: Honorary award
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Outstanding Research Award, National Science Council
Chang, E. Y. (Recipient), 2009
Prize: Honorary award
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Outstanding Research Award, National Science Council
Chang, E. Y. (Recipient), 2013
Prize: Honorary award
Activities
- 3 Invited talk