Projects per year
Personal profile
Research Interests
InP, GaAs based compound materials and devices (HEMT, HBT) for wireless communication and sub-milimeterwave imaging applications
GaN based materials (MBE, MOCVD) and High frequency & High power electronics (HEMT) applications
III-V/ Si integration (Ge, SiGe, GaAs, InP) for logic applications
Advanced package (Flip chip) for high frequency and power applications
Experience
Dean of International College of Semiconductor Technology (2014-present)
Head of NCTU-TSMC Research center, National Chiao Tung University, Taiwan (2013-present)
Dean of Research and Development, NCTU (2011/02~2016/08)
Director, NCTU-TSMC Research Center (2013/05~present)
Head, Diamond Project, NCTU (2011/02~present)
Joint Professor, Dept. of Materials Science and Engineering and Dept. of Electronics Engineering, NCTU (2008/02~present)
Department Head, Dept. of Materials Science and Engineering, NCTU (2004/02~2008/02)
Dean, Office of International Affairs (2002/06~2004/01)
Professor, Dept. of Materials Science and Engineering, NCTU (1999/01~2008/02)
General Manager, Hexawave Inc., Taiwan (1997/12~1999/01)
Senior MTS, Microelectronics Division, Comsat Labs, USA (1988/05~1990/01)
Senior MTS, GaAs Component Division, Unisys Corp, USA (1985/12~1988/05)
Education/Academic qualification
PhD, University of Minnesota Twin Cities
External positions
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Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
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適用於無界限通訊之超高頻氮化鎵元件技術研發(1/2)
1/05/22 → 30/04/23
Project: Government Ministry › Ministry of Science and Technology
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前瞻技術產學合作計畫-未來社會(2025-2035)鼎極節能半導體技術(2/5)
1/03/22 → 28/02/23
Project: Government Ministry › Ministry of Science and Technology
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前瞻技術產學合作計畫-整合氮化鎵高遷移率電晶體功率元件與新穎面射型雷射光源供先進光達系統應用(1/3)
1/11/21 → 31/10/22
Project: Government Ministry › Ministry of Science and Technology
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Development of MmW/Sub-mmW GaN HEMT with Novel Ohmic Contact Materials and Technologies
1/10/21 → 30/09/22
Project: Government Ministry › Ministry of Science and Technology
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Development Of A Novel eEhancemnt-mode GaN Power Device
1/08/21 → 31/07/22
Project: Government Ministry › Ministry of Science and Technology
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A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer
Weng, Y. C., Lin, Y. C., Hsu, H. T., Kao, M. L., Huang, H. Y., Ueda, D., Ha, M. T. H., Yang, C. Y., Maa, J. S., Chang, E. Y. & Dee, C. F., 1 Feb 2022, In: Materials. 15, 3, 703.Research output: Contribution to journal › Article › peer-review
Open Access -
Cerium oxide capping on Y-doped HfO2films for ferroelectric phase stabilization with endurance improvement
Mizutani, K., Hoshii, T., Wakabayashi, H., Tsutsui, K., Chang, E. Y. & Kakushima, K., 1 Feb 2022, In: Japanese journal of applied physics. 61, 2, 021006.Research output: Contribution to journal › Article › peer-review
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Flyback Converter Using a D-Mode GaN HEMT Synchronous Rectifier
Shieh, Y. T., Liu, C. Y., Wu, C. C., Chieng, W. H. & Chang, E. Y., 1 May 2022, In: Energies. 15, 9, 3197.Research output: Contribution to journal › Article › peer-review
Open Access -
Nitrogen-Passivated (010) In0.53Ga0.47As FinFETs with High Peak gmand Reduced Leakage Current
Ko, H. L., Luc, Q. H., Huang, P., Chen, S. M., Wu, J. Y., Hsu, C. W., Tran, N. A. & Chang, E. Y., 1 Feb 2022, In: IEEE Transactions on Electron Devices. 69, 2, p. 495-499 5 p.Research output: Contribution to journal › Article › peer-review
1 Scopus citations -
Optimization for the growth condition of in situ SiN xcap layer on ultrathin barrier InAlGaN/GaN heterostructures by metal-organic chemical vapor deposition
Zheng, X. X., Huang, J. Y., Yang, C. Y., Nguyen, H. T. N. & Chang, E. Y., Feb 2022, In: Applied Physics Express. 15, 2, 021001.Research output: Contribution to journal › Article › peer-review
1 Scopus citations
Prizes
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Outstanding Electrical Engineer Award, Chinese Institute of Electrical Engineering
Chang, Edward Yi (Recipient), 2008
Prize: Honorary award
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Outstanding Research Award, National Science Council
Chang, Edward Yi (Recipient), 2013
Prize: Honorary award
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Outstanding Research Award, National Science Council
Chang, Edward Yi (Recipient), 2009
Prize: Honorary award
Activities
- 3 Invited talk
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ISCSI-VII/ISTDM 2016
Edward Yi Chang (Speaker)
7 Jun 2016Activity: Talk or presentation › Invited talk
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國際電子元件與材料研討會 IEDMS
Edward Yi Chang (Speaker)
19 Nov 2015Activity: Talk or presentation › Invited talk