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PhD, National Chiao Tung University
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臺日(JP)雙邊協議型擴充加值(add-on) 國際合作研究計畫-奈米級鐵電電晶體之研究開發及其在機器學習加速器之應用
1/04/22 → 31/03/23
Project: Government Ministry › Ministry of Science and Technology
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三維堆疊奈米互補式場效電晶體與記憶體元件之研製
1/08/21 → 31/07/22
Project: Government Ministry › Ministry of Science and Technology
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三維堆疊奈米互補式場效電晶體與記憶體元件之研製
1/08/23 → 31/07/24
Project: Government Ministry › Ministry of Science and Technology
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三維堆疊奈米互補式場效電晶體與記憶體元件之研製
1/08/22 → 31/07/23
Project: Government Ministry › Ministry of Science and Technology
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臺日(JP)雙邊協議型擴充加值(add-on) 國際合作研究計畫-奈米級鐵電電晶體之研究開發及其在機器學習加速器之應用
1/04/21 → 31/03/22
Project: Government Ministry › Ministry of Science and Technology
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Demonstration of synaptic characteristics of polycrystalline-silicon ferroelectric thin-film transistor for application of neuromorphic computing
Ma, W. C. Y., Su, C. J., Lee, Y. J., Kao, K. H., Chang, T. H., Chang, J. C., Wu, P. H., Yen, C. L. & Lin, J. H., 1 Apr 2022, In: Semiconductor Science and Technology. 37, 4, 045003.Research output: Contribution to journal › Article › peer-review
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Effects of Annealing Temperature on TiN/Hf0.5Zr0.5O2/TiN Ferroelectric Capacitor Prepared by <italic>In-situ</italic> like Consecutive Atomic Layer Deposition
Liang, Y. K., Huang, Y. S., Peng, L. C., Yang, T. Y., Young, B. F., Lu, C. C., Yeong, S. H., Lin, Y. M., Su, C. J., Chang, E. Y. & Lin, C. H., 2022, (Accepted/In press) In: IEEE Transactions on Nanotechnology. p. 1-4 4 p.Research output: Contribution to journal › Article › peer-review
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Efficient Erase Operation by GIDL Current for 3D Structure FeFETs with Gate Stack Engineering and Compact Long-Term Retention Model
Mo, F., Xiang, J., Mei, X., Sawabe, Y., Saraya, T., Hiramoto, T., Su, C. J., Hu, V. P. H. & Kobayashi, M., 2022, In: IEEE Journal of the Electron Devices Society. 10, p. 115-122 8 p.Research output: Contribution to journal › Article › peer-review
Open Access -
Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode
Wu, C. H., Wang, K. C., Wang, Y. Y., Hu, C., Su, C-J. & Wu, T-L., 1 Feb 2022, In: Nanomaterials. 12, 3, p. 1-8 8 p., 468.Research output: Contribution to journal › Article › peer-review
Open Access -
First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications
Chang, S. W., Lu, T. H., Yang, C. Y., Yeh, C. J., Huang, M. K., Meng, C. F., Chen, P. J., Chang, T. H., Chang, Y. S., Jhu, J. W., Hong, T. C., Ke, C. C., Yu, X. R., Lu, W. H., Baig, M. A., Cho, T. C., Sung, P. J., Su, C. J., Hsueh, F. K., Chen, B. Y., & 21 others , 1 Apr 2022, In: IEEE Transactions on Electron Devices. 69, 4, p. 2101-2107 7 p.Research output: Contribution to journal › Article › peer-review
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