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Finished
InxGa1-xAs channel MOSFET for high frequency amplifier application and integration of InxGa1-xAs channel with Si FinFET using Core Shell structure.
1/03/22 → 28/02/23
Project: Government Ministry › Other Government Ministry Institute
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臺瑞(SE)雙邊協議型擴充加值(add-on)國際合作研究計畫—開發應用於毫米波/次毫米波之氮化銦鋁鎵/氮化鎵高電子遷移率電晶體於絕緣體上矽(SOI)基板(2/5)
1/10/21 → 30/09/22
Project: Government Ministry › Other Government Ministry Institute
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InxGa1-xAs channel MOSFET for high frequency amplifier application and integration of InxGa1-xAs channel with Si FinFET using Core Shell structure.
1/03/21 → 28/02/22
Project: Government Ministry › Other Government Ministry Institute
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臺瑞(SE)雙邊協議型擴充加值(add-on)國際合作研究計畫-開發應用於毫米波/次毫米波之氮化銦鋁鎵/氮化鎵高電子遷移率電晶體於絕緣體上矽(SOI)基板(1/5)
1/10/20 → 30/09/21
Project: Government Ministry › Other Government Ministry Institute
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InxGa1-xAs channel MOSFET for high frequency amplifier application and integration of InxGa1-xAs channel with Si FinFET using Core Shell structure.
1/03/20 → 28/02/21
Project: Government Ministry › Other Government Ministry Institute