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臺瑞(SE)雙邊協議型擴充加值(add-on)國際合作研究計畫—開發應用於毫米波/次毫米波之氮化銦鋁鎵/氮化鎵高電子遷移率電晶體於絕緣體上矽(SOI)基板(3/5)
1/10/22 → 30/09/23
Project: Government Ministry › Other Government Ministry Institute
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原子層沉積法製造奈米級鐵電閘極氧化物薄膜電晶體於記憶體之應用
1/08/22 → 31/07/23
Project: Government Ministry › Other Government Ministry Institute
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Finished
InxGa1-xAs channel MOSFET for high frequency amplifier application and integration of InxGa1-xAs channel with Si FinFET using Core Shell structure.
1/03/22 → 28/02/23
Project: Government Ministry › Other Government Ministry Institute
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臺瑞(SE)雙邊協議型擴充加值(add-on)國際合作研究計畫—開發應用於毫米波/次毫米波之氮化銦鋁鎵/氮化鎵高電子遷移率電晶體於絕緣體上矽(SOI)基板(2/5)
1/10/21 → 30/09/22
Project: Government Ministry › Other Government Ministry Institute
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InxGa1-xAs channel MOSFET for high frequency amplifier application and integration of InxGa1-xAs channel with Si FinFET using Core Shell structure.
1/03/21 → 28/02/22
Project: Government Ministry › Other Government Ministry Institute
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臺瑞(SE)雙邊協議型擴充加值(add-on)國際合作研究計畫-開發應用於毫米波/次毫米波之氮化銦鋁鎵/氮化鎵高電子遷移率電晶體於絕緣體上矽(SOI)基板(1/5)
1/10/20 → 30/09/21
Project: Government Ministry › Other Government Ministry Institute
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InxGa1-xAs channel MOSFET for high frequency amplifier application and integration of InxGa1-xAs channel with Si FinFET using Core Shell structure.
1/03/20 → 28/02/21
Project: Government Ministry › Other Government Ministry Institute