Keyphrases
Metal-organic Chemical Vapor Deposition (MOCVD)
98%
GaN HEMT
98%
Si Substrate
68%
Ultrathin
67%
Superlattice
58%
Thin-film Transistors
58%
HfO2
50%
Electrical Characteristics
48%
LaNiO3
47%
Atomic Layer Deposited
41%
Ferroelectric Capacitor
41%
Microstructure
40%
Annealing Temperature
38%
AlGaN-GaN
36%
Electrical Properties
36%
Gallium Arsenide
36%
Dielectric Properties
34%
Zirconium Dioxide
34%
Annealing
34%
InGaP
33%
Multiple Quantum Wells
33%
Metal-ferroelectric-metal Capacitor
31%
High Electron Mobility Transistor
29%
Breakdown Voltage
29%
Aluminum Oxide
28%
In Situ
27%
Gas Source Molecular Beam Epitaxy
26%
Growth Temperature
25%
Silicon-on-insulator
25%
GaN-on-Si
25%
GaN MIS-HEMT
25%
HfZrO2
25%
Remanent Polarization
24%
Dielectric Constant
23%
Ferroelectric Properties
22%
Insulator Substrate
22%
Capacitors
20%
Fin Field-effect Transistor (FinFET)
20%
Endurance Performance
20%
Device Characteristics
20%
Interfacial Layer
20%
Heterostructure
19%
InAsP
18%
Hf0.5Zr0.5O2
18%
Wake-up
18%
Lattice Matching
17%
Interface Traps
17%
Barrier Layer
17%
Enhancement-mode (E-mode)
17%
Highly Stable
17%
Material Science
Thin Films
100%
Transistor
92%
Ferroelectric Material
84%
Metal-Organic Chemical Vapor Deposition
73%
Capacitor
72%
Electron Mobility
69%
Superlattice
66%
Silicon
60%
Thin-Film Transistor
55%
Quantum Well
53%
Gallium Arsenide
50%
Heterojunction
49%
Zirconia
40%
Density
40%
Surface (Surface Science)
39%
Electrical Property
36%
Indium
35%
Zinc Oxide
35%
Ferroelectric Thin Films
33%
Dielectric Property
32%
Aluminum Nitride
31%
Dielectric Material
31%
Film
28%
Oxide Compound
27%
Ferroelectricity
27%
Tin
25%
Chemical Vapor Deposition
23%
Capacitance
22%
Al2O3
20%
Surface Roughness
20%
Permittivity
19%
Phase Composition
18%
Field Effect Transistor
18%
Molecular Beam Epitaxy
17%
Transmission Electron Microscopy
16%
Aluminium Gallium Arsenide
16%
Metal-Oxide-Semiconductor Field-Effect Transistor
16%
Oxidation Reaction
16%
Epitaxial Film
16%
Composite Material
16%
Titanium Oxide
16%
Annealing
15%
Oxide Semiconductor
14%
Epitaxy
13%
Electrical Resistivity
13%
Thermal Stability
12%
Indium Gallium Arsenide
12%
Nucleation
12%
Schottky Barrier
12%
X-Ray Diffraction
11%
Engineering
Thin-Film Transistor
75%
Thin Films
73%
Superlattice
66%
Atomic Layer
58%
Quantum Well
57%
Gallium Arsenide
54%
Annealing Temperature
48%
Atomic Layer Deposition
46%
Dielectrics
44%
Metal Organic Chemical Vapor Deposition
37%
Breakdown Voltage
36%
Si Substrate
31%
Channel Length
27%
Ray Diffraction
25%
Heterojunctions
24%
Barrier Layer
24%
Interfacial Layer
22%
Interface Trap
20%
Band Offset
19%
Power Amplifier
19%
Heterostructures
18%
Electric Field
18%
Source Gas
17%
Phase Composition
17%
Silicon on Insulator
16%
Metal-Oxide-Semiconductor Field-Effect Transistor
16%
Aluminium Gallium Arsenide
16%
Assisted Deposition
16%
Passivation Layer
16%
Light Detection and Ranging
16%
Random Access Memory
16%
Oxide Film
16%
Channel Transistor
16%
Schottky Barrier
14%
Indium Gallium Arsenide
14%
Nitride
13%
Conduction Band
13%
Buffer Layer
13%
Oxide Semiconductor
13%
Cutoff Frequency
12%
Incident Angle
12%
Radio Frequency
12%
Current Drain
12%
Growth Temperature
11%
Photonics
11%
Heat Losses
11%
Plane Strain
11%
High Electric Field
11%
Deposition System
11%
Ion Energy
11%