Projects per year
Personal profile
Research Interests
Advanced III-V compound semiconductor and Si CMOS Devices
Compound semiconductor device manufacturing and integration (GaAs, InP, Sb-based and GaN)
Semiconductor process technology of advanced 3D Si CMOS devices (e.g. FinFET) Microelectronics Materials Science & Engineering
Education/Academic qualification
PhD, Materials Science and Engineering, University of Illinois at Urbana-Champaign
Fingerprint
Dive into the research topics where Chun-Hsiung Lin is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
- 1 Similar Profiles
Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
Projects
- 7 Finished
-
臺瑞(SE)雙邊協議型擴充加值(add-on)國際合作研究計畫—開發應用於毫米波/次毫米波之氮化銦鋁鎵/氮化鎵高電子遷移率電晶體於絕緣體上矽(SOI)基板(3/5)
Lin, C.-H. (PI)
1/10/22 → 30/09/23
Project: Government Ministry › Other Government Ministry Institute
-
原子層沉積法製造奈米級鐵電閘極氧化物薄膜電晶體於記憶體之應用
Lin, C.-H. (PI)
1/08/22 → 31/07/23
Project: Government Ministry › Other Government Ministry Institute
-
InxGa1-xAs channel MOSFET for high frequency amplifier application and integration of InxGa1-xAs channel with Si FinFET using Core Shell structure.
Lin, C.-H. (PI)
1/03/22 → 28/02/23
Project: Government Ministry › Other Government Ministry Institute
-
臺瑞(SE)雙邊協議型擴充加值(add-on)國際合作研究計畫—開發應用於毫米波/次毫米波之氮化銦鋁鎵/氮化鎵高電子遷移率電晶體於絕緣體上矽(SOI)基板(2/5)
Lin, C.-H. (PI)
1/10/21 → 30/09/22
Project: Government Ministry › Other Government Ministry Institute
-
InxGa1-xAs channel MOSFET for high frequency amplifier application and integration of InxGa1-xAs channel with Si FinFET using Core Shell structure.
Lin, C.-H. (PI)
1/03/21 → 28/02/22
Project: Government Ministry › Other Government Ministry Institute
-
Characteristics of GaN MIS-HEMT with ZrO2/HfO2 Superlattice Gate Dielectric Layer
Chen, K. L., Chou, H., Lin, K. S., Chen, Y., Yang, H. C., Weng, Y. C., Yang, C. Y., Jang, W. Y., Chang, S. Z., Chang, E. Y. & Lin, C. H., 1 Jan 2026, In: ECS Journal of Solid State Science and Technology. 15, 1, 015007.Research output: Contribution to journal › Article › peer-review
-
Effect of in-situ ozone annealing on top-gate atomic layer deposited InZnOx channel thin-film transistors on various underlying dielectric layers
Lin, G. H., Li, Y. T., Chen, Y., Yang, H. C., Chen, C. W., Chou, T. T., Kei, C. C., Jang, W. Y., Chang, S. Z., Chang, E. Y. & Lin, C. H., Feb 2026, In: Materials Science in Semiconductor Processing. 202, 110176.Research output: Contribution to journal › Article › peer-review
1 Scopus citations -
Effect of Ozone Annealing on the Characteristics of p-Type SnO TFT
Lin, K. S., Lin, Y. Y., Lin, G. H., Yang, H. C., Chou, T. T., Chen, C. W., Kei, C. C., Yen, F. Y., Chen, W. Y., Chu, F. C., Yang, F. C. & Lin, C. H., 2026, 2026 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2026 - Proceedings of Technical Papers. Institute of Electrical and Electronics Engineers Inc., (2026 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2026 - Proceedings of Technical Papers).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
-
Effects of Composition and Ozone Treatment on the Electrical Performance and Stability of ALD Indium Gallium Oxide TFTs
Yang, H. C., Li, Y. T., Lin, G. H., Chen, Y., Liang, Y. K., Chen, C. W., Chou, T. T., Kei, C. C., Huang, H. Y., Yang, F. C., Lin, Y. M. & Lin, C. H., 2026, In: IEEE Transactions on Electron Devices. 73, 3, p. 1387-1394 8 p.Research output: Contribution to journal › Article › peer-review
1 Scopus citations -
Modulated Quasi-Continuous-Wave Laser Module for Free-Space Optics
Chen, C. H., Lin, C. H., Kuo, H. C., Hong, Y. H., Liu, C. Y., Lin, K. E., Shieh, Y. T., Jeng, S. L., Chang, E. Y. & Chieng, W. H., Jun 2026, In: Photonics. 13, 6, 561.Research output: Contribution to journal › Article › peer-review
Open Access