Projects per year
Personal profile
Research Interests
Advanced III-V compound semiconductor and Si CMOS Devices
Compound semiconductor device manufacturing and integration (GaAs, InP, Sb-based and GaN)
Semiconductor process technology of advanced 3D Si CMOS devices (e.g. FinFET) Microelectronics Materials Science & Engineering
Education/Academic qualification
PhD, Materials Science and Engineering, University of Illinois at Urbana-Champaign
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Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
Projects
- 7 Finished
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臺瑞(SE)雙邊協議型擴充加值(add-on)國際合作研究計畫—開發應用於毫米波/次毫米波之氮化銦鋁鎵/氮化鎵高電子遷移率電晶體於絕緣體上矽(SOI)基板(3/5)
Lin, C.-H. (PI)
1/10/22 → 30/09/23
Project: Government Ministry › Other Government Ministry Institute
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原子層沉積法製造奈米級鐵電閘極氧化物薄膜電晶體於記憶體之應用
Lin, C.-H. (PI)
1/08/22 → 31/07/23
Project: Government Ministry › Other Government Ministry Institute
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InxGa1-xAs channel MOSFET for high frequency amplifier application and integration of InxGa1-xAs channel with Si FinFET using Core Shell structure.
Lin, C.-H. (PI)
1/03/22 → 28/02/23
Project: Government Ministry › Other Government Ministry Institute
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臺瑞(SE)雙邊協議型擴充加值(add-on)國際合作研究計畫—開發應用於毫米波/次毫米波之氮化銦鋁鎵/氮化鎵高電子遷移率電晶體於絕緣體上矽(SOI)基板(2/5)
Lin, C.-H. (PI)
1/10/21 → 30/09/22
Project: Government Ministry › Other Government Ministry Institute
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InxGa1-xAs channel MOSFET for high frequency amplifier application and integration of InxGa1-xAs channel with Si FinFET using Core Shell structure.
Lin, C.-H. (PI)
1/03/21 → 28/02/22
Project: Government Ministry › Other Government Ministry Institute
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Analysis of breakdown voltage for GaN MIS-HEMT with various composite field plate configurations and passivation layers
Langpoklakpam, C., Hsiao, Y. K., Yi Chang, E., Lin, C. H. & Kuo, H. C., Jun 2024, In: Solid-State Electronics. 216, 108930.Research output: Contribution to journal › Article › peer-review
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Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium-Tin-Zinc-Oxide Channel
Liang, Y. K., Zheng, J. Y., Lin, Y. L., Lu, Y. C., Hsieh, D. R., Chou, T. T., Kei, C. C., Huang, H. Y., Lin, Y. M., Tseng, Y. C., Chao, T. S., Chang, E. Y., Toprasertpong, K., Takagi, S. & Lin, C. H., 1 Jun 2024, In: IEEE Transactions on Electron Devices. 71, 6, p. 3671-3677 7 p.Research output: Contribution to journal › Article › peer-review
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Aggressively Scaled Atomic Layer Deposited Amorphous InZnOxThin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS= 2V)
Liang, Y. K., Zheng, J. Y., Lin, Y. L., Li, W. L., Lu, Y. C., Hsieh, D. R., Peng, L. C., Chou, T. T., Kei, C. C., Lu, C. C., Huang, H. Y., Tseng, Y.-C., Chao, T.-S., Chang, E. Y. & Lin, C. H., 2023, 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2023-June).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
6 Scopus citations -
Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
Weng, Y. C., Hsiao, M. Y., Lin, C. H., Lan, Y.-P. & Chang, E. Y., May 2023, In: Materials. 16, 9, 3376.Research output: Contribution to journal › Article › peer-review
Open Access -
Effect of Local Substrate Removal and Backside Al Heat Dissipation Layer on GaN-on-Si Device RF Performance
Lin, Y., Huang, H. Y., Weng, Y. C., Kuo, H. C., Dee, C. F., Lin, C. H. & Chang, E. Y., Sep 2023, In: ECS Journal of Solid State Science and Technology. 12, 9, 095005.Research output: Contribution to journal › Article › peer-review