Projects per year
Personal profile
Research Interests
Advanced III-V compound semiconductor and Si CMOS Devices
Compound semiconductor device manufacturing and integration (GaAs, InP, Sb-based and GaN)
Semiconductor process technology of advanced 3D Si CMOS devices (e.g. FinFET) Microelectronics Materials Science & Engineering
Education/Academic qualification
PhD, Materials Science and Engineering, University of Illinois at Urbana-Champaign
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Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
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臺瑞(SE)雙邊協議型擴充加值(add-on)國際合作研究計畫—開發應用於毫米波/次毫米波之氮化銦鋁鎵/氮化鎵高電子遷移率電晶體於絕緣體上矽(SOI)基板(3/5)
1/10/22 → 30/09/23
Project: Government Ministry › Other Government Ministry Institute
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原子層沉積法製造奈米級鐵電閘極氧化物薄膜電晶體於記憶體之應用
1/08/22 → 31/07/23
Project: Government Ministry › Other Government Ministry Institute
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InxGa1-xAs channel MOSFET for high frequency amplifier application and integration of InxGa1-xAs channel with Si FinFET using Core Shell structure.
1/03/22 → 28/02/23
Project: Government Ministry › Other Government Ministry Institute
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臺瑞(SE)雙邊協議型擴充加值(add-on)國際合作研究計畫—開發應用於毫米波/次毫米波之氮化銦鋁鎵/氮化鎵高電子遷移率電晶體於絕緣體上矽(SOI)基板(2/5)
1/10/21 → 30/09/22
Project: Government Ministry › Other Government Ministry Institute
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InxGa1-xAs channel MOSFET for high frequency amplifier application and integration of InxGa1-xAs channel with Si FinFET using Core Shell structure.
1/03/21 → 28/02/22
Project: Government Ministry › Other Government Ministry Institute
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Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications
Hieu, L. T., Hsu, H. T., Chiang, C. H., Panda, D., Lee, C. T., Lin, C. H. & Chang, E. Y., Feb 2023, In: Semiconductor Science and Technology. 38, 2, 025006.Research output: Contribution to journal › Article › peer-review
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Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages
Lin, Y., Kao, M. L., Weng, Y. C., Dee, C. F., Chen, S. C., Kuo, H. C., Lin, C. H. & Chang, E. Y., Dec 2022, In: Micromachines. 13, 12, 2140.Research output: Contribution to journal › Article › peer-review
Open Access -
Characterization of Ferroelectric Characteristics for Hafnium Zirconium Oxide Capacitors with Refractory Electrodes
Liang, Y. K., Lin, J. W., Huang, Y. S., Lin, W. C., Young, B. F., Shih, Y. C., Lu, C. C., Yeong, S. H., Lin, Y. M., Liu, P. T., Chang, E. Y. & Lin, C. H., May 2022, In: ECS Journal of Solid State Science and Technology. 11, 5, 053012.Research output: Contribution to journal › Article › peer-review
Open Access1 Scopus citations -
Effects of Annealing Temperature on TiN/Hf0.5Zr0.5O2/TiN Ferroelectric Capacitor Prepared by <italic>In-situ</italic> like Consecutive Atomic Layer Deposition
Liang, Y. K., Huang, Y. S., Peng, L. C., Yang, T. Y., Young, B. F., Lu, C. C., Yeong, S. H., Lin, Y. M., Su, C. J., Chang, E. Y. & Lin, C. H., 2022, (Accepted/In press) In: IEEE Transactions on Nanotechnology. p. 1-4 4 p.Research output: Contribution to journal › Article › peer-review
2 Scopus citations -
Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition
Liang, Y. K., Lin, J. W., Peng, L. C., Hua, Y. M., Chou, T. T., Kei, C. C., Lu, C. C., Huang, H. Y., Yeong, S. H., Lin, Y. M., Liu, P. T., Chang, E. Y. & Lin, C. H., 2022, (Accepted/In press) In: IEEE Transactions on Electron Devices. p. 1-6 6 p.Research output: Contribution to journal › Article › peer-review