Projects per year
Personal profile
Research Interests
First-principles Calculation of Crystal Bulks and Surfaces, Theory of Scanning Tunneling Microscopy (STM), Atomic-scale Magnetism
Experience
Education/Academic qualification
PhD, Physics, Boston University
External positions
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Dive into the research topics where Chiung-Yuan Lin is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations and top research areas from the last five years
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Projects
- 10 Finished
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First-principles Study of Migration Path of TiO2 Oxygen Vacancy: Towards the Application of RRAM-based Electronic Synapses
Lin, C.-Y. (PI)
1/08/17 → 31/07/18
Project: Government Ministry › Other Government Ministry Institute
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First-principles Calculations Of Insulator/silicene/insulator Junctions
Lin, C.-Y. (PI)
1/08/16 → 31/07/17
Project: Government Ministry › Other Government Ministry Institute
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以第一原理檢視表面鈦原子自旋之磁交互作用
Lin, C.-Y. (PI)
1/08/15 → 31/07/16
Project: Government Ministry › Other Government Ministry Institute
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Classical-Molecular-Dynamics and First-Principles Quantum-Transport Calculations of Nanocrystalline-Silicon Solar Cell Embeded in An Amorphous Silicon-Oxide Matrix
Lin, C.-Y. (PI)
1/08/14 → 31/07/15
Project: Government Ministry › Other Government Ministry Institute
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First-principles And Tight-binding Calculations of Nanocrystalline-silicon Solar Cell Embeded in A ZnO Matrix
Lin, C.-Y. (PI)
1/08/13 → 31/07/14
Project: Government Ministry › Other Government Ministry Institute
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Impacts of Annealing Temperature on Performance and Reliability of Morphotropic Phase Boundary (MPB) in HZO
Liu, H. Y., Peng, W. C., Yu, C. Y., Lin, C. Y. & Wu, T. L., 2026, In: IEEE Transactions on Electron Devices. 73, 1, p. 318-324 7 p.Research output: Contribution to journal › Article › peer-review
2 Scopus citations -
Investigation of Read-Speed Limitation and Switching Dynamics of Ferroelectric Capacitors for Capacitor-Mode Compute-in-Memory Applications
Liu, H. Y., Peng, W. C., Lin, C. Y. & Wu, T. L., 2026, 2026 IEEE International Reliability Physics Symposium, IRPS 2026. Institute of Electrical and Electronics Engineers Inc., (IEEE International Reliability Physics Symposium Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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Investigation of TiO₂ seed layer engineering for improved remanent polarization uniformity, TDDB reliability, and dipole switching in La-doped ferroelectric HZO MFM devices
Liu, H. Y., Ronchi, N., Bizindavyi, J., Popovici, M. I., Yu, C. Y., Chen, P. M., Lin, C. Y., Van Houdt, J. & Wu, T. L., Apr 2026, In: Microelectronics Reliability. 179, 116046.Research output: Contribution to journal › Article › peer-review
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Toward stable FeFET multi-level cell operations using novel weight freezing methodology with recovery cycling scheme for neuromorphic applications
Hsuen, J. H., Liu, H. Y., Lederer, M., Raffel, Y., Seidel, K., Kämpfe, T., De, S., Lin, C. Y. & Wu, T. L., Jun 2026, In: Microelectronics Reliability. 181, 116128.Research output: Contribution to journal › Article › peer-review
Open Access1 Scopus citations -
Novel Nondestructive Methodology Using PV Measurement With NLS-Based Analysis and GIXRD for Comprehensive O/T/M Phase Analyses in Ferroelectric HZO
Liu, H. Y., Peng, W. C., Yu, C. Y., Kuznietsov, I., Lin, C. Y., Chauhan, Y. S. & Wu, T. L., 2025, In: IEEE Transactions on Electron Devices. 72, 7, p. 3582-3586 5 p.Research output: Contribution to journal › Article › peer-review
3 Scopus citations