Projects per year
Personal profile
Research Interests
Single event effect (SEE) in semiconductor devices
Electrostatic discharge (ESD) and transient voltage suppressors (TVS)
Education/Academic qualification
PhD, Electrical and Electronics Engineering, The University of Tokyo
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氮化鎵金絕半高電子遷移率電晶體輻射加固之元件優化工程
1/08/22 → 31/07/23
Project: Government Ministry › Other Government Ministry Institute
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Radiation Hardness Study of GaN HEMT for 5G Satellite Communication
1/06/21 → 31/05/22
Project: Government Ministry › Other Government Ministry Institute
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Radiation Hardness Study of GaN HEMT for 5G Satellite Communication
1/06/20 → 31/05/21
Project: Government Ministry › Other Government Ministry Institute
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A Comprehensive Study of Total Ionizing Dose Effect on the Electrical Performance of the GaN MIS-HEMT
Yang, C. Y., Chung, C. H., Yu, W., Ma, C. J., Wu, S. R., Dixit, A., Lee, C. T. & Chang, E. Y., 1 Jun 2022, In: IEEE Transactions on Device and Materials Reliability. 22, 2, p. 276-281 6 p.Research output: Contribution to journal › Article › peer-review
1 Scopus citations -
Annealing induced cation diffusion in TaOx-based memristor and its compatibility for back-end-of-line post-processing
Prasad, O. K., Chandrasekaran, S., Chung, C. H., Chang, K. M. & Simanjuntak, F. M., 5 Dec 2022, In: Applied Physics Letters. 121, 23, 233505.Research output: Contribution to journal › Article › peer-review
Open Access -
Optimization of Forward and Reverse Electrical Characteristics of GaN-on-Si Schottky Barrier Diode Through Ladder-Shaped Hybrid Anode Engineering
Yang, C. Y., Wu, J. H., Chung, C. H., You, J. Y., Yu, T. C., Ma, C. J., Lee, C. T., Ueda, D., Hsu, H. T. & Chang, E. Y., 1 Dec 2022, In: IEEE Transactions on Electron Devices. 69, 12, p. 6644-6649 6 p.Research output: Contribution to journal › Article › peer-review
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Understanding the Difference in Soft-Error Sensitivity of Back-Biased Thin-BOX SOI SRAMs to Space and Terrestrial Radiation
Chung, C. H., Kobayashi, D. & Hirose, K., Dec 2019, In: IEEE Transactions on Device and Materials Reliability. 19, 4, p. 751-756 6 p., 8882369.Research output: Contribution to journal › Article › peer-review
2 Scopus citations -
Resistance-Based Modeling for Soft Errors in SOI SRAMs Caused by Radiation-Induced Potential Perturbation under the BOX
Chung, C. H., Kobayashi, D. & Hirose, K., Dec 2018, In: IEEE Transactions on Device and Materials Reliability. 18, 4, p. 574-582 9 p., 8477021.Research output: Contribution to journal › Article › peer-review
6 Scopus citations