Keyphrases
Electromigration
100%
Nanotwinned Cu
56%
Flip Chip Solder Joints
51%
Solder Joint
48%
Soldering
45%
Microbump
44%
Nanoporous Copper
36%
(111)-oriented
33%
Bump
29%
Solder Bump
29%
Intermetallic Compounds
29%
Current Stressing
26%
Cu Film
23%
Low Temperature
22%
Bonding Interface
18%
Annealing
18%
Under Bump Metallization
18%
Cu-Cu Bonding
17%
Nanotwins
17%
SnPb Solder
17%
Flip chip
16%
Sn-Ag Solder
16%
Microstructure
15%
Void Growth
15%
Electroplating
15%
Bonding Strength
14%
Current Density
13%
Cu Joint
13%
Thermo-migration
13%
Failure Mechanism
13%
Current Crowding
13%
Cu6Sn5
12%
Highly Oriented
12%
Hybrid Bonding
11%
Cu-Cu Joints
11%
3D IC
11%
Cu-Sn
11%
Joule Heating Effect
10%
Copper Direct Bonding
10%
Fine pitch
10%
Si Substrate
10%
Infrared Microscopy
10%
Grain Growth
10%
Current Crowding Effect
9%
Bonding Process
9%
Cu-SiO2
9%
Metallization
8%
Copper Film
8%
Atomic Layer Deposition
8%
Cu-Cu
8%
Material Science
Solder Joint
92%
Density
60%
Intermetallics
48%
Film
42%
Surface (Surface Science)
31%
Annealing
19%
Void Growth
19%
Electroplating
17%
Electronic Circuit
16%
Silicon
15%
Thermal Cycling
11%
Grain Boundary
10%
Cathode
9%
Ultimate Tensile Strength
9%
Lead-Free Solder
9%
Finite Element Method
9%
Grain Size
8%
Diffusivity
8%
Electrical Resistivity
8%
Aluminum Oxide
8%
Anode
7%
Oxidation Reaction
7%
Nanotube
7%
Electrodeposition
7%
Titanium Dioxide
7%
Dielectric Material
7%
Thin Films
7%
Oxide Compound
7%
Thermal Stress
6%
Tin
6%
Creep
6%
Single Crystal
6%
Polyimide
6%
Activation Energy
6%
Nanorod
6%
Shear Strength
5%
Engineering
Joints (Structural Components)
94%
Electromigration
70%
Metallizations
23%
Solder Bump
23%
Low-Temperature
21%
Intermetallics
19%
Bonding Strength
15%
Direct Bonding
15%
Void Growth
12%
Eutectics
11%
Failure Mechanism
9%
Cu Film
9%
Silicon Dioxide
8%
Joule Heating Effect
8%
Interconnects
8%
Current Crowding Effect
8%
Hot Spot
8%
Thermophoresis
7%
Bonding Process
7%
Resistance Heating
6%
Temperature Distribution
6%
Finite Element Analysis
6%
Nanotube
5%
Atomic Layer Deposition
5%
Diffusivity
5%
Bonding Temperature
5%
Induced Failure
5%
Cu Surface
5%
Thermal Compression Bonding
5%
Three Dimensional Integrated Circuits
5%
Si Substrate
5%
Creep
5%
Continuous Wave
5%