Calculated based on number of publications stored in Pure and citations from Scopus
Calculated based on number of publications stored in Pure and citations from Scopus
Calculated based on number of publications stored in Pure and citations from Scopus
1971 …2024

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  • 2016

    Modeling independent multi-gate MOSFETs

    Duarte, J. P., Khandelwal, S., Chang, H. L., Lin, Y. K., Kushwaha, P., Chauhan, Y. S. & Hu, C.-M., 22 May 2016, Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. Romanowicz, B., Laudon, M., Case, F., Case, F. & Romanowicz, B. (eds.). TechConnect, p. 281-286 6 p. (Advanced Materials - TechConnect Briefs 2016; vol. 4).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Modeling of GeOI and validation with Ge-CMOS inverter circuit using BSIM-IMG industry standard model

    Agarwal, H., Kushwaha, P., Chauhan, Y. S., Khandelwal, S., Duarte, J. P., Lin, Y. K., Chang, H. L., Hu, C.-M., Wu, H. & Ye, P. D., 15 Dec 2016, 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016. Institute of Electrical and Electronics Engineers Inc., p. 444-447 4 p. 7785303. (2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    7 Scopus citations
  • Modeling of high voltage LDMOSFET using industry standard BSIM6 MOS model

    Gupta, C., Agarwal, H., Chauhan, Y. S., Khandelwal, S., Lin, Y. K., Hu, C.-M. & Gillon, R., 15 Dec 2016, 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016. Institute of Electrical and Electronics Engineers Inc., p. 124-127 4 p. 7785225. (2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    6 Scopus citations
  • Modeling of threshold voltage for operating point using industry standard BSIM-IMG model

    Kushwaha, P., Agarwal, R., Agarwal, H., Chauhan, Y. S., Khandelwal, S., Duarte, J. P., Lin, Y. K., Chang, H. L. & Hu, C.-M., 15 Dec 2016, 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016. Institute of Electrical and Electronics Engineers Inc., p. 216-219 4 p. 7785247. (2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    6 Scopus citations
  • MoS 2 U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS 2 availability

    Li, K. S., Wu, B. W., Li, L. J., Li, M. Y., Cheng, C. C. K., Hsu, C. L., Lin, C. H., Chen, Y. J., Chen, C. C., Wu, C. T., Chen, M. C., Shieh, J. M., Yeh, W. K., Chueh, Y. L., Yang, F. L. & Hu, C.-M., 21 Sep 2016, 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc., 7573375. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2016-September).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    15 Scopus citations
  • Predictive effective mobility model for FDSOI transistors using technology parameters

    Kushwaha, P., Agarwal, H., Chauhan, Y. S., Bhoir, M., Mohapatra, N. R., Khandelwal, S., Duarte, J. P., Lin, Y. K., Chang, H. L. & Hu, C.-M., 15 Dec 2016, 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016. Institute of Electrical and Electronics Engineers Inc., p. 448-451 4 p. 7785304. (2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    6 Scopus citations
  • 2015

    0.2V adiabatic NC-FinFET with 0.6mA/μm ION and 0.1nA/μm IOFF

    Hu, C.-M., Salahuddin, S., Lin, C. I. & Khan, A., 3 Aug 2015, 73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., p. 39-40 2 p. 7175542. (Device Research Conference - Conference Digest, DRC; vol. 2015-August).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    57 Scopus citations
  • 2D layered materials: From materials properties to device applications

    Zhao, P., Desai, S., Tosun, M., Roy, T., Fang, H., Sachid, A., Amani, M., Hu, C.-M. & Javey, A., 16 Feb 2015, 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., p. 27.3.1-27.3.4 7409780. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2016-February).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    21 Scopus citations
  • 2D MOSFET operation of a fully-depleted bulk MoS2 at quasi-flatband back-gate

    Najmzadeh, M., Duarte, J. P., Khandelwal, S., Zeng, Y. & Hu, C.-M., 3 Aug 2015, 73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., p. 135-136 2 p. 7175592. (Device Research Conference - Conference Digest, DRC; vol. 2015-August).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    10 Scopus citations
  • BSIM-CMG: Standard FinFET compact model for advanced circuit design

    Duarte, J. P., Khandelwal, S., Medury, A., Hu, C.-M., Kushwaha, P., Agarwal, H., Dasgupta, A. & Chauhan, Y. S., 30 Oct 2015, ESSCIRC 2015 - Proceedings of the 41st European Solid-State Circuits Conference. Dielacher, F., Pribyl, W. & Hueber, G. (eds.). IEEE Computer Society, p. 196-201 6 p. 7313862. (European Solid-State Circuits Conference; vol. 2015-October).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    75 Scopus citations
  • BSIM-IMG: Compact model for RF-SOI MOSFETs

    Kushwaha, P., Agarwal, H., Khandelwal, S., Duarte, J. P., Medury, A., Hu, C.-M. & Chauhan, Y. S., 3 Aug 2015, 73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., p. 279-280 2 p. 7175688. (Device Research Conference - Conference Digest, DRC; vol. 2015-August).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    15 Scopus citations
  • Electrostatic integrity and performance enhancement for UTB InGaAs-OI MOSFET with high-k dielectric through spacer design

    Hu, V. P. H., Sachid, A. B., Lo, C. T., Su, P. & Hu, C.-M., 3 Jun 2015, 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015. Institute of Electrical and Electronics Engineers Inc., 7117568. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings; vol. 2015-June).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    6 Scopus citations
  • Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs

    Chen, M. C., Lin, C. Y., Li, K. H., Li, L. J., Chen, C. H., Chuang, C. H., Lee, M. D., Chen, Y. J., Hou, Y. F., Lin, C. H., Chen, C. C., Wu, B. W., Wu, C. S., Yang, I., Lee, Y. J., Yeh, W. K., Wang, T.-H., Yang, F. L. & Hu, C.-M., 20 Feb 2015, 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Institute of Electrical and Electronics Engineers Inc., Vol. 2015-February. p. 33.5.1-33.5.4 7047163. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    9 Scopus citations
  • New industry standard FinFET compact model for future technology nodes

    Khandelwal, S., Duarte, J. P., Medury, A., Chauhan, Y. S. & Hu, C.-M., 25 Aug 2015, 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. T62-T63 7223704. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2015-August).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    13 Scopus citations
  • Sub-60mV-swing negative-capacitance FinFET without hysteresis

    Li, K. S., Chen, P. G., Lai, T. Y., Lin, C. H., Cheng, C. C., Chen, C. C., Wei, Y. J., Hou, Y. F., Liao, M. H., Lee, M. H., Chen, M. C., Sheih, J. M., Yeh, W. K., Yang, F. L., Salahuddin, S. & Hu, C.-M., 16 Feb 2015, 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., p. 22.6.1-22.6.4 7409760. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2016-February).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    240 Scopus citations
  • TMD FinFET with 4 nm thin body and back gate control for future low power technology

    Chen, M. C., Li, K. S., Li, L. J., Lu, A. Y., Li, M. Y., Chang, Y. H., Lin, C. H., Chen, Y. J., Hou, Y. F., Chen, C. C., Wu, B. W., Wu, C. S., Yang, I., Lee, Y. J., Shieh, J. M., Yeh, W. K., Shih, J. H., Su, P. C., Sachid, A. B. & Wang, T.-H. & 2 others, Yang, F. L. & Hu, C.-M., 16 Feb 2015, 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., p. 32.2.1-32.2.4 7409813. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2016-February).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    36 Scopus citations
  • 2014

    Body-bias effect in SOI FinFET for low-power applications: Gate length dependence

    Sachid, A. B., Khandelwal, S. & Hu, C.-M., 1 Jan 2014, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society, 6839655. (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    4 Scopus citations
  • BSIM-IMG with improved surface potential calculation recipe

    Kushwaha, P., Yadav, C., Agarwal, H., Chauhan, Y. S., Srivatsava, J., Khandelwal, S., Duarte, J. P. & Hu, C.-M., 11 Dec 2014, 11th IEEE India Conference: Emerging Trends and Innovation in Technology, INDICON 2014. Institute of Electrical and Electronics Engineers Inc., 7030498. (11th IEEE India Conference: Emerging Trends and Innovation in Technology, INDICON 2014).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    7 Scopus citations
  • Impact of channel doping on the device and NBTI performance in FinFETs for low power applications

    Sachid, A. B. & Hu, C.-M., 2014, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society, 6839654. (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • InGaAs FinFET modeling using industry standard compact model BSIM-CMG

    Khandelwal, S., Duarte, J. P., Paydavosi, N., Chauhan, Y. S., Gu, J. J., Si, M., Ye, P. D. & Hu, C.-M., Jun 2014, Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. Nano Science and Technology Institute, p. 475-478 4 p. (Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014; vol. 2).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations
  • Series resistance and mobility in mechanically-exfoliated layered transition metal dichalcogenide MOSFETs

    Sachid, A. B., Fang, H., Javey, A. & Hu, C.-M., 2014, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society, 6839668. (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations
  • 2013

    A 10 nm Si-based bulk FinFETs 6T SRAM with multiple fin heights technology for 25% better static noise margin

    Chen, M. C., Lin, C. H., Hou, Y. F., Chen, Y. J., Lin, C. Y., Hsueh, F. K., Liu, H. L., Liu, C. T., Wang, B. W., Chen, H. C., Chen, C. C., Chen, S. H., Wu, C. T., Lai, T. Y., Lee, M. Y., Wu, B. W., Wu, C. S., Yang, I., Hsieh, Y. P. & Ho, C. & 4 others, Wang, T.-H., Sachid, A. B., Hu, C.-M. & Yang, F. L., 2013, 2013 Symposium on VLSI Circuits, VLSIC 2013 - Digest of Technical Papers. p. T218-T219 2 p. 6578756. (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    10 Scopus citations
  • A 10 nm Si-based bulk FinFETs 6T SRAM with multiple fin heights technology for 25% better static noise margin

    Chen, M. C., Lin, C. H., Hou, Y. F., Chen, Y. J., Lin, C. Y., Hsueh, F. K., Liu, H. L., Liu, C. T., Wang, B. W., Chen, H. C., Chen, C. C., Chen, S. H., Wu, C. T., Lai, T. Y., Lee, M. Y., Wu, B. W., Wu, C. S., Yang, I., Hsieh, Y. P. & Ho, C. & 4 others, Wang, T.-H., Sachid, A. B., Hu, C.-M. & Yang, F. L., 11 Jun 2013, 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers. p. T218-T219 2 p. 6576630. (Digest of Technical Papers - Symposium on VLSI Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    12 Scopus citations
  • BSIM compact MOSFET models for SPICE simulation

    Chauhan, Y. S., Venugopalan, S., Paydavosi, N., Kushwaha, P., Jandhyala, S., Duarte, J. P., Agnihotri, S., Yadav, C., Agarwal, H., Niknejad, A. & Hu, C.-M., 20 Jun 2013, Proceedings of the 20th International Conference on Mixed Design of Integrated Circuits and Systems, MIXDES 2013. p. 23-28 6 p. 6613307. (Proceedings of the 20th International Conference on Mixed Design of Integrated Circuits and Systems, MIXDES 2013).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    25 Scopus citations
  • Compact modeling for the changing transistor

    Hu, C.-M., 31 Dec 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013. p. 49-52 4 p. 6650571. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    3 Scopus citations
  • Device design considerations for ultra-thin body non-hysteretic negative capacitance FETs

    Yeung, C. W., Khan, A. I., Salahuddin, S. & Hu, C.-M., 1 Dec 2013, 2013 3rd Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2013 - Proceedings. 6705876. (2013 3rd Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2013 - Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    32 Scopus citations
  • Enabling circuit design using FinFETs through close ecosystem collaboration

    Sheu, B. J., Chang, C. S., Chen, Y. H., Wang, K., Chen, K. J., Peng, Y. C., Tien, L. C., Song, M. H., Hou, C., Sun, J. Y. C. & Hu, C.-M., 12 Jun 2013, 2013 Symposium on VLSI Circuits, VLSIC 2013 - Digest of Technical Papers. p. T110-T111 2 p. 6578741. (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • Enabling circuit design using FinFETs through close ecosystem collaboration

    Sheu, B. J., Chang, C. S., Chen, Y. H., Wang, K., Chen, K. J., Peng, Y. C., Tien, L. C., Song, M. H., Hou, C., Sun, J. Y. C. & Hu, C.-M., 11 Jun 2013, 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers. p. T110-T111 2 p. 6576615. (Digest of Technical Papers - Symposium on VLSI Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    3 Scopus citations
  • EUV degradation of high performance Ge MOSFETs

    Chen, Y. T., Chang, H. C., Wong, I. S., Lin, C. M., Sun, H. C., Ciou, H. J., Yeh, W. T., Lo, S. J., Liu, C. W., Hu, C.-M. & Yang, F. L., 2013, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013. 6545603. (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • FinFET and UTB-How to make very short channel mosfets

    Hu, C.-M., 2013, SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 ed. Electrochemical Society Inc., p. 17-20 4 p. (ECS Transactions; vol. 50, no. 9).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    8 Scopus citations
  • Flicker noise in advanced CMOS technology: Effects of halo implant

    Paydavosi, N., Venugopalan, S., Sachid, A., Niknejad, A., Hu, C.-M., Dey, S., Martin, S. & Zhang, X., 1 Jan 2013, ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference. IEEE Computer Society, p. 238-241 4 p. 6818863. (European Solid-State Device Research Conference).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    8 Scopus citations
  • High sensitivity DNA sieving technology by entropic trapping in 3D artificial nano-channel matrices

    Wang, C. H., Hsu, C. L., Chiu, W. C., Lai, T. Y., Chou, T. H., Yang, I., Ho, C., Hu, C.-M., Yang, F. L. & Chou, Y. C., 2013, IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013. p. 899-902 4 p. 6474389. (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • Low power negative capacitance FETs for future quantum-well body technology

    Yeung, C. W., Khan, A. I., Sarker, A., Salahuddin, S. & Hu, C.-M., 12 Aug 2013, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013. 6545648. (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    64 Scopus citations
  • Monolithic 3D chip integrated with 500ns NVM, 3ps logic circuits and SRAM

    Shen, C. H., Shieh, J. M., Wu, T. T., Huang, W. H., Yang, C. C., Wan, C. J., Lin, C. D., Wang, H. H., Chen, B. Y., Huang, G. W., Lien, Y. C., Wong, S., Wang, C., Lai, Y.-C., Chen, C. F., Chang, M. F., Hu, C.-M. & Yang, F. L., 2013, 2013 IEEE International Electron Devices Meeting, IEDM 2013. p. 9.3.1-9.3.4 6724593. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    30 Scopus citations
  • Recent enhancements in BSIM6 bulk MOSFET model

    Agarwal, H., Venugopalan, S., Chalkiadaki, M. A., Paydavosi, N., Duarte, J. P., Agnihotri, S., Yadav, C., Kushwaha, P., Chauhan, Y. S., Enz, C. C., Niknejad, A. & Hu, C.-M., 31 Dec 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013. p. 53-56 4 p. 6650572. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    30 Scopus citations
  • Record-high 121/62 μa/μm on-currents 3D stacked epi-like Si FETs with and without metal back gate

    Yang, C. C., Chen, S. H., Shieh, J. M., Huang, W. H., Hsieh, T. Y., Shen, C. H., Wu, T. T., Wang, H. H., Lee, Y. J., Hou, F. J., Pan, C. L., Chang-Liao, K. S., Hu, C.-M. & Yang, F. L., 1 Dec 2013, 2013 IEEE International Electron Devices Meeting, IEDM 2013. 6724719. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    16 Scopus citations
  • Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications

    Chen, S. H., Chen, M. C., Chen, H. M., Shih, C. F., Wu, S. H., Ho, Y. Y., Lai, Y. S., Chen, S. J., Liu, K., Chen, B. Y., Lai, D. Y., Lin, C. H., Lin, C. Y., Hsueh, F. K., Wu, C. M., Hsu, C. L., Chiu, W. C., Chen, C. C., Liu, A. & Hsu, C. T. & 14 others, Wu, C. S., Lee, M. Y., Chou, T. H., Yao, J. Y., Shen, Y. L., Hsu, Q. Z., Lin, K. L., Wu, C. T., Kuo, M. L., Yang, C. H., Wu, W. F., Ho, C., Hu, C.-M. & Yang, F. L., 2013, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013. 6545608. (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • Unified FinFET compact model: Modelling trapezoidal triple-gate FinFETs

    Duarte, J. P., Paydavosi, N., Venugopalan, S., Sachid, A. & Hu, C.-M., 31 Dec 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013. p. 135-138 4 p. 6650593. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    35 Scopus citations
  • 2012

    3D Ferroelectric-like NVM/CMOS hybrid chip by sub-400 °c sequential layered integration

    Lien, Y. C., Shieh, J. M., Huang, W. H., Hsieh, W. S., Tu, C. H., Wang, C., Shen, C. H., Chou, T. H., Chen, M. C., Huang, J. Y., Pan, C. L., Lai, Y.-C., Hu, C.-M. & Yang, F. L., 2012, 2012 IEEE International Electron Devices Meeting, IEDM 2012. p. 33.6.1-33.6.4 6479160. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    6 Scopus citations
  • 3D FinFET and other sub-22nm transistors

    Hu, C.-M., 2012, 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012. 6306337. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    8 Scopus citations
  • A little known benefit of FinFET over Planar MOSFET in highperformance circuits at advanced technology nodes

    Sachid, A. B. & Hu, C.-M., 2012, 2012 IEEE International SOI Conference, SOI 2012. 6404367. (Proceedings - IEEE International SOI Conference).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    15 Scopus citations
  • Analysis and modeling of vertical non-uniform doping in bulk MOSFETs for circuit simulation

    Khandelwal, S., Chauhan, Y. S., Karim, M. A., Venugopalan, S., Sachid, A., Niknejad, A. & Hu, C.-M., 18 May 2012, 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012. 6188935. (2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    5 Scopus citations
  • Analytical surface-potential calculation in UTBSOI MOSFETs with independent back-gate control

    Khandelwal, S., Chauhan, Y. S., Lu, D. D., Karim, M. A., Venugopalan, S., Sachid, A., Niknejad, A. & Hu, C.-M., 17 Aug 2012, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. p. 780-783 4 p. (Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • A non-iterative physical procedure for RF CMOS compact model extraction using BSIM6

    Venugopalan, S., Dandu, K., Martin, S., Taylor, R., Cirba, C., Zhang, X., Niknejad, A. M. & Hu, C.-M., 2012, Proceedings of the IEEE 2012 Custom Integrated Circuits Conference, CICC 2012. 6330675. (Proceedings of the Custom Integrated Circuits Conference).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    15 Scopus citations
  • BSIM6: Symmetric bulk MOSFET model

    Chauhan, Y. S., Karim, M. A., Venugopalan, S., Khandelwal, S., Thakur, P., Paydavosi, N., Sachid, A. B., Niknejad, A. & Hu, C.-M., 2012, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. p. 724-729 6 p. (Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    7 Scopus citations
  • BSIM-IMG: A Turnkey compact model for fully depleted technologies

    Hu, C.-M., Niknejad, A., Sriramkumar, V., Lu, D., Chauhan, Y., Kahm, M. & Sachid, A., 2012, 2012 IEEE International SOI Conference, SOI 2012. 6404352. (Proceedings - IEEE International SOI Conference).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    6 Scopus citations
  • BSIM Industry standard compact MOSFET models

    Chauhan, Y. S., Venugopalan, S., Karim, M. A., Khandelwal, S., Paydavosi, N., Thakur, P., Niknejad, A. M. & Hu, C.-M., 2012, 2012 Proceedings of the European Solid State Circuits Conference, ESSCIRC 2012. p. 30-33 4 p. 6341249. (European Solid-State Circuits Conference).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    40 Scopus citations
  • BSIM Industry standard compact MOSFET models

    Singh Chauhan, Y., Venugopalan, S., Karim, M. A., Khandelwal, S., Paydavosi, N., Thakur, P., Niknejad, A. M. & Hu, C.-M., 11 Dec 2012, 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012. p. 46-49 4 p. 6343330. (European Solid-State Device Research Conference).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    27 Scopus citations
  • CIGS solar cell integrated with high mobility microcrystalline Si TFTs on 30×40 cm2 glass panels for self powered electronics

    Shen, C. H., Shieh, J. M., Wu, T. T., Huang, J. Y., Huang, C. H., Huang, Y. H., Lu, T.-C., Dai, B. T., Hu, C.-M. & Yang, F. L., 6 Dec 2012, 2012 Conference on Lasers and Electro-Optics, CLEO 2012. 6325429. (2012 Conference on Lasers and Electro-Optics, CLEO 2012).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations
  • Compact models for real device effects in FinFETs: Quantum-mechanical confinement and double junctions in FinFETs

    Venugopalan, S., Kari, M. A., Niknejad, A. M., Hu, C.-M. & Lu, D. D., Sep 2012, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 292-295 4 p. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    5 Scopus citations