Projects per year
Personal profile
Research Interests
Applied Physical Science, Engineering Science
Education/Academic qualification
PhD, Electrical Engineering and Computer Sciences, University of California, Berkeley
External positions
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Collaborations and top research areas from the last five years
Projects
- 5 Finished
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智慧半導體奈米系統技術研究中心(5/5)
1/03/22 → 31/05/23
Project: Government Ministry › Other Government Ministry Institute
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Center for Semiconductor Technology Research (4/5)
1/03/21 → 31/05/22
Project: Government Ministry › Other Government Ministry Institute
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Center for Semiconductor Technology Research (3/5)
1/03/20 → 31/05/21
Project: Government Ministry › Other Government Ministry Institute
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Center for Semiconductor Technology Research
1/03/19 → 31/05/20
Project: Government Ministry › Other Government Ministry Institute
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Intelligent Semiconductor Nanosystem Technology Research Center
1/03/18 → 31/05/19
Project: Government Ministry › Other Government Ministry Institute
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An Improved Robust Infinitely Differentiable Drift Resistance Model for BSIM High Voltage Compact Model
Singhal, A., Gill, G., Pahwa, G., Hu, C. & Agarwal, H., 2023, 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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Compact Modeling of Impact Ionization in High-Voltage Devices
Gill, G., Singhal, A., Pahwa, G., Hu, C. & Agarwal, H., 1 May 2023, In: IEEE Transactions on Electron Devices. 70, 5, p. 2389-2394 6 p.Research output: Contribution to journal › Article › peer-review
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Comprehensive High-Voltage Parameter Extraction Strategy for BSIM-BULK HV Model
Gill, G., Machhiwar, Y., Pahwa, G., Hu, C. & Agarwal, H., 2023, (Accepted/In press) In: IEEE Transactions on Electron Devices. p. 1-7 7 p.Research output: Contribution to journal › Article › peer-review
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Cryogenic Characterization and Model Extraction of 5nm Technology Node FinFETs
Parihar, S. S., Pahwa, G., Huang, J. Z., Wang, W., Imura, K., Hu, C. & Chauhan, Y. S., 2023, 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
1 Scopus citations -
Neural Network-Based BSIM Transistor Model Framework: Currents, Charges, Variability, and Circuit Simulation
Tung, C. T. & Hu, C., 1 Apr 2023, In: IEEE Transactions on Electron Devices. 70, 4, p. 2157-2160 4 p.Research output: Contribution to journal › Article › peer-review
2 Scopus citations