Keyphrases
AlGaN Barrier
5%
AlGaN-GaN
6%
AlInGaN
6%
Aluminum Gallium Nitride (AlGaN)
14%
Annealing
6%
Barrier Layer
6%
Blue Light-emitting Diodes
9%
Contact Layer
13%
Crystal Quality
8%
Diode Structures
5%
DUV LED
7%
Forward Voltage
10%
GaN Buffer
13%
GaN Epitaxial Layers
10%
GaN Films
6%
GaN Layers
10%
GaN Template
10%
GaN-based
22%
GaN-based Light-emitting Diodes
33%
Green Light-emitting Diodes
5%
Indium Gallium Nitride (InGaN)
41%
Indium Tin Oxide
11%
Injection Current
8%
Light Extraction Efficiency
7%
Light-emitting Diodes
82%
Low Temperature
10%
Metal-organic Chemical Vapor Deposition (MOCVD)
23%
Multiple Quantum Wells
27%
N-GaN
8%
Nanorods
9%
Near Ultraviolet
8%
Near-ultraviolet Light-emitting Diode
5%
Nitrides
47%
Ohmic Contact
8%
Output Intensity
5%
P-GaN
21%
Patterned Sapphire Substrate
9%
Power Output
15%
Sapphire
7%
Sapphire Substrate
10%
Schottky Barrier Photodetectors
6%
Short-period Superlattice
13%
Si-doped
7%
Sidewall
7%
Surface Layer
6%
Transparent Contacts
7%
White Light-emitting Diodes
6%
Material Science
Aluminum Nitride
8%
Annealing
5%
Buffer Layer
12%
Chemical Vapor Deposition
9%
Density
10%
Electrical Resistivity
7%
Epitaxial Film
15%
Film
11%
Indium Tin Oxide
14%
Light-Emitting Diode
100%
Metal-Organic Chemical Vapor Deposition
13%
Nanorod
12%
Nitride Compound
42%
Nucleation
5%
Oxide Compound
6%
Quantum Well
10%
Sapphire
17%
Schottky Barrier
10%
Superlattice
17%
Surface (Surface Science)
14%
Vapor Phase Epitaxy
5%
ZnO
12%
Engineering
Barrier Layer
5%
Blue Light
6%
Buffer Layer
6%
Chemical Vapor Deposition
6%
Crystal Quality
6%
Current Injection
8%
Epitaxial Film
10%
Forward Voltage
11%
Growth Temperature
5%
Heterojunctions
5%
Indium-Tin-Oxide
10%
Light Extraction Efficiency
7%
Light-Emitting Diode
88%
Low-Temperature
7%
Metal Organic Chemical Vapor Deposition
12%
Nitride
37%
Ohmic Contacts
6%
Output Power
14%
Photometer
6%
Quantum Well
11%
Reflectance
5%
Sapphire Substrate
11%
Schottky Barrier
5%
Side Wall
7%
Superlattice
17%
Surface Layers
6%
Ultraviolet Light
9%
Vapor Deposition
8%
