Projects per year
Personal profile
Research Interests
Solid State Lighting, Light Emitting Diodes, Epitaxial growth of semiconductor materials
Experience
2001/5~2004/5 Senior Engineer,Epitaxy section Manager South Epitaxy Incorporation R. D. (Epitaxy)
2004/6~2005/8 Assistant Professor Epitech Incorporation R. D. (Epitaxy)
2005/9~2008/7 Associate Professor,National Central University Department of Optics and Photonics
2008/8~2010/7 Affiliation Department Period Title National Central University Department of Optics and Photonics
Education/Academic qualification
PhD, Microelectronics Engineering, National Cheng Kung University
External positions
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Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
Projects
- 11 Finished
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Investigation Of Epitaxy Growth III-Nitride Nanorod Structure And Nanorod UVC LED
Kuo, C.-H. (PI)
1/08/20 → 31/07/21
Project: Government Ministry › Other Government Ministry Institute
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Investigation Of Epitaxy Growth III-Nitride Nanorod Structure And Nanorod UVC LED
Kuo, C.-H. (PI)
1/08/19 → 31/07/20
Project: Government Ministry › Other Government Ministry Institute
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Investigation Of Epitaxy Growth III-Nitride Nanorod Structure And Nanorod UVC LED
Kuo, C.-H. (PI)
1/08/18 → 31/07/19
Project: Government Ministry › Other Government Ministry Institute
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Direct epitaxy growth blue micro LED wafer by using MOCVD and fabrication blue micro LED array
Kuo, C.-H. (PI)
1/08/17 → 31/10/18
Project: Government Ministry › Other Government Ministry Institute
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Fabrication of AIN substrate for UV light emitting diode by using home-made hydride vapor-phase epitaxy system
Kuo, C.-H. (PI)
1/08/16 → 31/10/17
Project: Government Ministry › Other Government Ministry Institute
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P-Type Spin-Coated Sol–Gel Cr2O3Layer by Postannealing in Vacuum
Lai, W. C., Hsu, C. H., Wu, B. T., Chen, P. H., Chang, S. P., Kuo, C. H., Sheu, J. K. & Chang, S. J., 19 Aug 2025, In: ACS Omega. 10, 32, p. 35763-35770 8 p.Research output: Contribution to journal › Article › peer-review
Open Access -
Utilizing low-temperature GaN insertion in p+-GaN and n++-GaN layers as connection layers in GaN-based tandem LEDs
Lai, W. C., Tsai, C. M., Huang, W. P., Lee, C. A., Yang, S. H., Chang, S. P., Kuo, C. H. & Chang, S. J., Aug 2025, In: Chinese Journal of Physics. 96, p. 266-272 7 p.Research output: Contribution to journal › Article › peer-review
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Effects of Chip Size and Thermally Oxidized AlxGa2-xO3 Sidewall on the Optoelectrical Characteristics of AlGaN-Based Deep Ultraviolet Micro-Light-Emitting Diodes
Wang, T. Y., Lai, W. C., Xie, Q. J., Chang, S. P., Kuo, C. H. & Sheu, J. K., 24 Dec 2024, In: ACS Applied Electronic Materials. 6, 12, p. 8757-8765 9 p.Research output: Contribution to journal › Article › peer-review
Open Access -
Thermally Oxidized AlxGa2-xO3/n-Al0.6Ga0.4N:Si Unipolar Resistive Random-Access Memory
Wang, T. Y., Lai, W. C., Xie, Q. J., Chang, S. P., Kuo, C. H. & Sheu, J. K., 28 May 2024, In: ACS Applied Electronic Materials. 6, 5, p. 3688-3694 7 p.Research output: Contribution to journal › Article › peer-review
Open Access2 Scopus citations -
The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes
Wang, T. Y., Lai, W. C., Xie, Q. J., Yang, S. H., Chang, S. P., Kuo, C. H. & Sheu, J. K., 13 Feb 2023, In: RSC Advances. 13, 8, p. 5437-5443 7 p.Research output: Contribution to journal › Article › peer-review
Open Access4 Scopus citations