Projects per year
Projects
- 22 Finished
Search results
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Finished
Research of the Vertical Stacked High Mobility Ge Channels Nanosheet Field Effect Transistor with High Quality Metal Doped into Interfacial Layer by Atomic Layer Deposition
Chien, C.-H. (PI)
1/08/22 → 31/07/23
Project: Government Ministry › Other Government Ministry Institute
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Research of the Vertical Stacked High Mobility Ge Channels Nanosheet Field Effect Transistor with High Quality Metal Doped into Interfacial Layer by Atomic Layer Deposition
Chien, C.-H. (PI)
1/08/21 → 31/07/22
Project: Government Ministry › Other Government Ministry Institute
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Process development of novel two-dimensional material: HfS2 andHfSe2 doping technology and device fabrication
Chien, C.-H. (PI)
1/08/20 → 31/07/21
Project: Government Ministry › Other Government Ministry Institute
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Research of the Vertical Stacked High Mobility Ge Channels Nanosheet Field Effect Transistor with High Quality Metal Doped into Interfacial Layer by Atomic Layer Deposition
Chien, C.-H. (PI)
1/08/20 → 31/07/21
Project: Government Ministry › Other Government Ministry Institute
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Technology Development of 4H-SiC Trench Gate MOSFET(3/3)
Chien, C.-H. (PI)
1/11/19 → 30/04/21
Project: Government Ministry › Other Government Ministry Institute
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Process development of novel two-dimensional material: HfS2 andHfSe2 doping technology and device fabrication
Chien, C.-H. (PI)
1/08/19 → 31/07/20
Project: Government Ministry › Other Government Ministry Institute
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Technology Development of 4H-SiC Trench Gate MOSFET(2/3)
Chien, C.-H. (PI)
1/11/18 → 31/10/19
Project: Government Ministry › Other Government Ministry Institute
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Process development of novel two-dimensional material: HfS2 andHfSe2 doping technology and device fabrication
Chien, C.-H. (PI)
1/08/18 → 31/07/19
Project: Government Ministry › Other Government Ministry Institute
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Novel Metal Doped Ultra-thin Interfacial Layer Gate Stack On High
Chien, C.-H. (PI)
1/06/18 → 31/08/19
Project: Government Ministry › Other Government Ministry Institute
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Development of Advanced Source/Drain Structure and its Application
Chien, C.-H. (PI)
1/08/17 → 31/07/18
Project: Government Ministry › Other Government Ministry Institute
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Exploration of novel device structure and new channel material for
Chien, C.-H. (PI)
1/08/17 → 28/02/19
Project: Government Ministry › Other Government Ministry Institute
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Exploration of Novel Device Structure And New Channel Material for Sub-7nm FinFET Technology Node
Chien, C.-H. (PI)
1/08/16 → 31/07/17
Project: Government Ministry › Other Government Ministry Institute
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Development of Advanced Source/Drain Structure and its Application
Chien, C.-H. (PI)
1/08/16 → 31/07/17
Project: Government Ministry › Other Government Ministry Institute
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Exploration of Novel Device Structure and New Channel Material for
Chien, C.-H. (PI)
1/08/15 → 31/07/16
Project: Government Ministry › Other Government Ministry Institute
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Development of Advanced Source/Drain Structure and its Application
Chien, C.-H. (PI)
1/08/15 → 31/07/16
Project: Government Ministry › Other Government Ministry Institute
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High Mobility Ge And III-V Epitaxial Hetero-channels on Si Substrates And Their Application on Sub-22 nm Field Effect Transistors
Chien, C.-H. (PI)
1/08/14 → 31/07/15
Project: Government Ministry › Other Government Ministry Institute
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High Mobility Ge And III-V Epitaxial Hetero-channels on Si Substrates And Their Application on Sub-22 nm Field Effect Transistors
Chien, C.-H. (PI)
1/08/13 → 31/07/14
Project: Government Ministry › Other Government Ministry Institute
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Low Temperature Atomic Layer Deposition of Barrier Layer on TiO2 Nanotube-array for Ahighly Efficient, Long Term Stable And Flexible Dye Sensitized Solar Cell
Chien, C.-H. (PI)
1/01/13 → 31/12/13
Project: Government Ministry › Other Government Ministry Institute
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High Mobility Ge And III-V Epitaxial Hetero-channels on Si Substrates And Their Application on Sub-22 nm Field Effect Transistors
Chien, C.-H. (PI)
1/08/12 → 31/07/13
Project: Government Ministry › Other Government Ministry Institute
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High-speed MOSFET with High-quality Ge and InGaAs Epitaxial Hetero-channels on Si Substrates (I)-(III)
Chien, C.-H. (PI)
1/08/11 → 31/01/13
Project: Government Ministry › Other Government Ministry Institute
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High-speed MOSFET with High-quality Ge and InGaAs Epitaxial Hetero-channels on Si Substrates (I)-(III)
Chien, C.-H. (PI)
1/08/10 → 31/01/11
Project: Government Ministry › Other Government Ministry Institute
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High-speed MOSFET with High-quality Ge and InGaAs Epitaxial Hetero-channels on Si Substrates (I)-(III)
Chien, C.-H. (PI)
1/08/09 → 31/01/10
Project: Government Ministry › Other Government Ministry Institute