Personal profile
Research Interests
High-k Dielectric for Nanoscale Devices, Organic Thin-film-transistor & Memory, Nanocrystal Nonvolatile Memory, Post-Si High-mobility Channel MOSFET
Experience
Education/Academic qualification
PhD, Electronics Engineering, National Chiao Tung University
External positions
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Collaborations and top research areas from the last five years
Projects
- 22 Finished
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Research of the Vertical Stacked High Mobility Ge Channels Nanosheet Field Effect Transistor with High Quality Metal Doped into Interfacial Layer by Atomic Layer Deposition
Chien, C.-H. (PI)
1/08/22 → 31/07/23
Project: Government Ministry › Other Government Ministry Institute
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Research of the Vertical Stacked High Mobility Ge Channels Nanosheet Field Effect Transistor with High Quality Metal Doped into Interfacial Layer by Atomic Layer Deposition
Chien, C.-H. (PI)
1/08/21 → 31/07/22
Project: Government Ministry › Other Government Ministry Institute
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Process development of novel two-dimensional material: HfS2 andHfSe2 doping technology and device fabrication
Chien, C.-H. (PI)
1/08/20 → 31/07/21
Project: Government Ministry › Other Government Ministry Institute
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Research of the Vertical Stacked High Mobility Ge Channels Nanosheet Field Effect Transistor with High Quality Metal Doped into Interfacial Layer by Atomic Layer Deposition
Chien, C.-H. (PI)
1/08/20 → 31/07/21
Project: Government Ministry › Other Government Ministry Institute
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Technology Development of 4H-SiC Trench Gate MOSFET(3/3)
Chien, C.-H. (PI)
1/11/19 → 30/04/21
Project: Government Ministry › Other Government Ministry Institute
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Improving Contact Resistance in Top-Gate Carbon Nanotube Transistor through Self-Aligned MoOxNanoparticle Contact Doping
Huang, H. Y., Chou, C.-H., Chiu, H. Y., Hsu, Y. W., Wu, Q. Y., Liu, B. H., Kei, C. C. & Chien, C. H., 13 Jan 2026, In: ACS Applied Electronic Materials. 8, 1, p. 256-264 9 p.Research output: Contribution to journal › Article › peer-review
Open Access -
Atomic Layer Epitaxial 2D Dielectric h-AlN as Interfacial Layer with Excellent Leakage and EOT < 1 nm for TMD-FETs
Wang, S. Y., Lin, Y. C., Huang, Y. C., Hu, C. & Chien, C. H., 2025, 2025 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2025 - Proceedings of Technical Papers. Institute of Electrical and Electronics Engineers Inc., (2025 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2025 - Proceedings of Technical Papers).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
1 Scopus citations -
HfO2 Memristor-Based Flexible Radio Frequency Switches
Chen, S. C., Yang, Y. T., Tseng, Y. C., Chiou, K. D., Huang, P. W., Chih, J. H., Liu, H. Y., Chou, T. T., Jhang, Y. Y., Chen, C. W., Kuan, C. H., Ho, E. M., Chien, C. H., Kuo, C. N., Cheng, Y. T. & Lien, D. H., 14 Jan 2025, In: ACS Nano. 19, 1, p. 704-711 8 p.Research output: Contribution to journal › Article › peer-review
Open Access16 Scopus citations -
High Mobility and Robust Top-Gate In2O3 Thin Film Transistor by Ozone-Based Treatment
Huang, C. S., Shih, T. C., Shih, C. C., Tsai, W. W., Chen, C. W., Yu, Y. H., Woon, W. Y. & Chien, C. H., 2025, In: IEEE Journal of the Electron Devices Society. 13, p. 1112-1119 8 p.Research output: Contribution to journal › Article › peer-review
Open Access1 Scopus citations -
Homo-Channel WSe2 n/pFETs with High Performance and On/Off Ratio Using Tunable Doping
Chiu, K. H., Wu, W. C., Huang, H. Y., Chih, J. H., Chang, Y. C., Wang, S. T., Chen, H. Y., Lin, C. Y., Lien, D. H., Hu, C. & Chien, C. H., 2025, 2025 Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2025. Institute of Electrical and Electronics Engineers Inc., (Digest of Technical Papers - Symposium on VLSI Technology).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
2 Scopus citations