Projects per year
Personal profile
Research Interests
High-k Dielectric for Nanoscale Devices, Organic Thin-film-transistor & Memory, Nanocrystal Nonvolatile Memory, Post-Si High-mobility Channel MOSFET
Experience
Education/Academic qualification
PhD, Electronics Engineering, National Chiao Tung University
External positions
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Dive into the research topics where Chao-Hsin Chien is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
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Research of the Vertical Stacked High Mobility Ge Channels Nanosheet Field Effect Transistor with High Quality Metal Doped into Interfacial Layer by Atomic Layer Deposition
1/08/22 → 31/07/23
Project: Government Ministry › Other Government Ministry Institute
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Research of the Vertical Stacked High Mobility Ge Channels Nanosheet Field Effect Transistor with High Quality Metal Doped into Interfacial Layer by Atomic Layer Deposition
1/08/21 → 31/07/22
Project: Government Ministry › Other Government Ministry Institute
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Process development of novel two-dimensional material: HfS2 andHfSe2 doping technology and device fabrication
1/08/20 → 31/07/21
Project: Government Ministry › Other Government Ministry Institute
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Research of the Vertical Stacked High Mobility Ge Channels Nanosheet Field Effect Transistor with High Quality Metal Doped into Interfacial Layer by Atomic Layer Deposition
1/08/20 → 31/07/21
Project: Government Ministry › Other Government Ministry Institute
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Technology Development of 4H-SiC Trench Gate MOSFET(3/3)
1/11/19 → 30/04/21
Project: Government Ministry › Other Government Ministry Institute
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Aggressive Equivalent Oxide Thickness of 0.7 nm on Si0.8Ge0.2Through HfO2 Dielectric Direct Deposition
Lee, M. C., Zhao, Y. Y., Chen, W. L., Wang, S. Y., Chen, Y. X., Luo, G. L. & Chien, C. H., 1 Oct 2022, In: Ieee Electron Device Letters. 43, 10, p. 1605-1608 4 p.Research output: Contribution to journal › Article › peer-review
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Comprehensive Physics Based TCAD Model for 2D MX2Channel Transistors
Sathaiya, D. M., Hung, T. Y. T., Chen, E., Wu, W. C., Wei, A., Chuu, C. P., Su, S. K., Chou, A. S., Chung, C. T., Chien, C. H., Wang, H., Cai, J., Wu, C. C., Radu, I. P. & Wu, J., 2022, 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., p. 2841-2844 4 p. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2022-December).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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Demonstration of HfO2-Based Gate Stacks with Ultralow Interface State Density and Leakage Current on Ge pMOSFET by Adding Hafnium into GeOx Interfacial Layer
Li, H. H., Chen, S. C., Lin, Y. H. & Chien, C. H., 2022, Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022. Ye, F. & Tang, T-A. (eds.). Institute of Electrical and Electronics Engineers Inc., (Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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Electrical Characteristics of Si0.8Ge0.2p-MOSFET With TMA Pre-Doping and NH3Plasma IL Treatment
Lee, M. C., Chung, N. J., Lin, H. R., Lee, W. L., Chung, Y. Y., Wang, S. Y., Luo, G. L. & Chien, C. H., 1 Apr 2022, In: IEEE Transactions on Electron Devices. 69, 4, p. 1776-1780 5 p.Research output: Contribution to journal › Article › peer-review
1 Scopus citations -
First Demonstration of GAA Monolayer-MoS2Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length
Chung, Y. Y., Chou, B. J., Hsu, C. F., Yun, W. S., Li, M. Y., Su, S. K., Liao, Y. T., Lee, M. C., Huang, G. W., Liew, S. L., Shen, Y. Y., Chang, W. H., Chen, C. W., Kei, C. C., Wang, H., Philip Wong, H. S., Lee, T. Y., Chien, C. H., Cheng, C. C. & Radu, I. P., 2022, 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., p. 3451-3454 4 p. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2022-December).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review