Projects per year
Personal profile
Research Interests
High-k Dielectric for Nanoscale Devices, Organic Thin-film-transistor & Memory, Nanocrystal Nonvolatile Memory, Post-Si High-mobility Channel MOSFET
Experience
Education/Academic qualification
PhD, Electronics Engineering, National Chiao Tung University
External positions
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Collaborations and top research areas from the last five years
Projects
- 22 Finished
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Research of the Vertical Stacked High Mobility Ge Channels Nanosheet Field Effect Transistor with High Quality Metal Doped into Interfacial Layer by Atomic Layer Deposition
Chien, C.-H. (PI)
1/08/22 → 31/07/23
Project: Government Ministry › Other Government Ministry Institute
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Research of the Vertical Stacked High Mobility Ge Channels Nanosheet Field Effect Transistor with High Quality Metal Doped into Interfacial Layer by Atomic Layer Deposition
Chien, C.-H. (PI)
1/08/21 → 31/07/22
Project: Government Ministry › Other Government Ministry Institute
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Process development of novel two-dimensional material: HfS2 andHfSe2 doping technology and device fabrication
Chien, C.-H. (PI)
1/08/20 → 31/07/21
Project: Government Ministry › Other Government Ministry Institute
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Research of the Vertical Stacked High Mobility Ge Channels Nanosheet Field Effect Transistor with High Quality Metal Doped into Interfacial Layer by Atomic Layer Deposition
Chien, C.-H. (PI)
1/08/20 → 31/07/21
Project: Government Ministry › Other Government Ministry Institute
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Technology Development of 4H-SiC Trench Gate MOSFET(3/3)
Chien, C.-H. (PI)
1/11/19 → 30/04/21
Project: Government Ministry › Other Government Ministry Institute
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Atom-Scaled Hafnium Doping for Strengthening the Germanium Oxide Interfacial Layer of The Gate Stack of Germanium P-Type Metal-Oxide-Semiconductor Field Effect Transistor
Li, H. H., Chen, S. C., Lin, Y. H. & Chien, C. H., May 2024, In: ECS Journal of Solid State Science and Technology. 13, 5, 053008.Research output: Contribution to journal › Article › peer-review
Open Access -
BEOL-Compatible Ferroelectric Capacitor of 5 nm Ultrathin HZO with High Remanent Polarization and Excellent Endurance
Teng, L. C., Huang, Y. C., Chang, S. J., Wang, S. Y., Lin, Y. H. & Chien, C. H., 2024, In: IEEE Transactions on Nanotechnology. 23, p. 474-477 4 p.Research output: Contribution to journal › Article › peer-review
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BEOL-Compatible Ferroelectric Capacitor with Excellent Endurance and Retention by Improving Interface Quality
Teng, L. C., Huang, Y. C., Wang, S. Y., Lin, Y. H. & Chien, C. H., 2024, 2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings. Institute of Electrical and Electronics Engineers Inc., (2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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Effect of Electrical Performance and Reliability by Adjustment of the Sequence and Concentration of HfAlOxon IWO Thin-Film Transistors
Chen, Y. X., Li, F. J., Wang, Y. L., Lee, M. C., Li, H. H., Lin, Y. H. & Chien, C. H., 2024, In: IEEE Transactions on Nanotechnology. 23, p. 422-426 5 p.Research output: Contribution to journal › Article › peer-review
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Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors
Chen, Y. X., Wang, Y. L., Li, F. J., Chang, S.-J., Lee, T. E., Cheng, C. C., Lee, M. C., Li, H. H., Lin, Y. H. & Chien, C. H., 2024, In: IEEE Transactions on Nanotechnology. 23, p. 299-302 4 p.Research output: Contribution to journal › Article › peer-review
1 Scopus citations