Projects per year
Personal profile
Research Interests
High-k Dielectric for Nanoscale Devices, Organic Thin-film-transistor & Memory, Nanocrystal Nonvolatile Memory, Post-Si High-mobility Channel MOSFET
Experience
Education/Academic qualification
PhD, National Chiao Tung University
External positions
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Research of the Vertical Stacked High Mobility Ge Channels Nanosheet Field Effect Transistor with High Quality Metal Doped into Interfacial Layer by Atomic Layer Deposition
1/08/21 → 31/07/22
Project: Government Ministry › Ministry of Science and Technology
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Research of the Vertical Stacked High Mobility Ge Channels Nanosheet Field Effect Transistor with High Quality Metal Doped into Interfacial Layer by Atomic Layer Deposition
1/08/22 → 31/07/23
Project: Government Ministry › Ministry of Science and Technology
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Research of the Vertical Stacked High Mobility Ge Channels Nanosheet Field Effect Transistor with High Quality Metal Doped into Interfacial Layer by Atomic Layer Deposition
1/08/20 → 31/07/21
Project: Government Ministry › Ministry of Science and Technology
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Process development of novel two-dimensional material: HfS2 andHfSe2 doping technology and device fabrication
1/08/20 → 31/07/21
Project: Government Ministry › Ministry of Science and Technology
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Technology Development of 4H-SiC Trench Gate MOSFET(3/3)
1/11/19 → 30/04/21
Project: Government Ministry › Ministry of Science and Technology
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Improving thermal stability for ge p-mosfet of HfO2-based gate stack with ti-doped into interfacial layer by in-situ plasma-enhanced atomic layer deposition
Li, H. H., Tsai, Y. H., Lin, Y. H. & Chien, C-H., Aug 2021, In: Ieee Electron Device Letters. 42, 8, p. 1109-1111 3 p., 9448269.Research output: Contribution to journal › Article › peer-review
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Influence of Ti doping on the band gap and thermal stability of ultrathin GeOx films
Yang, Y. C., Tsai, Y. H., Amrit, P., Chen, T. Y., Liu, H. T., Tang, S. J., Lin, C-L. & Chien, C-H., Aug 2021, In: Journal of Physics D: Applied Physics. 54, 34, p. 1-7 7 p., 345102.Research output: Contribution to journal › Article › peer-review
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Time-dependent dielectric breakdown of gate oxide on 4H-SiC with different oxidation processes
Tsui, B-Y., Huang, Y. T., Wu, T-L. & Chien, C-H., Aug 2021, In: Microelectronics Reliability. 123, 6 p., 114186.Research output: Contribution to journal › Article › peer-review
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High-Accuracy Deep Neural Networks Using a Contralateral-Gated Analog Synapse Composed of Ultrathin MoS nFET and Nonvolatile Charge-Trap Memory
Chung, Y. Y., Cheng, C. C., Chou, Y. C., Chueh, W. C., Chung, W. H., Yu, Z., Hung, T. Y. T., Huang, L. Y., Wang, S. Y., Teng, L. C., Chang, W. H., Li, L. J. & Chien, C-H., Nov 2020, In: Ieee Electron Device Letters. 41, 11, p. 1649-1652 4 p., 9206053.Research output: Contribution to journal › Article › peer-review
2 Scopus citations -
Impact of the Crystal Phase of ZrO2 on Charge Trapping Memtransistor as Synaptic Device for Neural Network Application
Chou, Y. C., Tsai, C. W., Yi, C. Y., Chung, W. H. & Chien, C-H., 2020, In: IEEE Journal of the Electron Devices Society. 8, p. 572-576 5 p., 9091548.Research output: Contribution to journal › Article › peer-review
Open Access1 Scopus citations