Material Science
Dielectric Material
93%
Oxide Compound
88%
Film
71%
Schottky Barrier
68%
Silicon
64%
Ion Implantation
57%
Silicide
57%
Annealing
54%
Metal-Oxide-Semiconductor Field-Effect Transistor
49%
Thermal Stability
49%
Thin-Film Transistor
40%
Field Effect Transistor
37%
Density
35%
Electrical Resistivity
34%
Permittivity
32%
Oxidation Reaction
31%
Surface (Surface Science)
31%
Capacitance
27%
Electronic Circuit
24%
Contact Resistance
23%
Capacitor
23%
Grain Boundary
22%
Germanium
21%
Metal Oxide
21%
Thin Films
20%
Electrical Property
18%
Carbon Nanotube
17%
Silicon Carbide
16%
Doping (Additives)
14%
Oxide Semiconductor
14%
Ultimate Tensile Strength
13%
Nanowire
13%
Oxide Film
13%
Contact Area
12%
Al2O3
12%
Defect Density
11%
Secondary Ion Mass Spectrometry
11%
Thermal Stress
10%
Silicon Dioxide
10%
Titanium
10%
Plasma Density
10%
Thermal Conductivity
9%
Metal Deposition
9%
Nitride Compound
9%
Charge Trapping
9%
Complementary Metal-Oxide-Semiconductor Device
8%
Arsenic
7%
Platinum
7%
Transistor
7%
Chemical Vapor Deposition
7%
Keyphrases
4H-SiC
100%
High Performance
52%
Ion Implantation
46%
Shallow Junction
42%
Annealing
42%
Schottky Barrier
40%
HfO2
39%
MOSFET
37%
Thin-film Transistors
35%
TiSi2
34%
Thermal Stability
34%
Dielectric
32%
Gate Dielectric
32%
Oxides
31%
PtSi
28%
Silica
27%
Schottky Barrier Height
27%
Poly-Si
27%
Tunneling Layer
25%
Epitaxial
24%
Metal Gate
22%
Gate Electrode
22%
PMOSFET
21%
P-channel
20%
NiGe
19%
Electrical Characteristics
19%
Fully Silicide
19%
Germanium
19%
Gate Oxide
18%
Field Oxide
18%
Silicide
18%
Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs)
17%
Si CMOS
17%
Local Oxidation
17%
Contact Resistivity
16%
Tunnel Field-effect Transistor
16%
Leakage Current
16%
Interfacial Layer
16%
Oxidation Mechanism
16%
Aluminum Oxide
16%
Nitrogen Ions
15%
Threshold Voltage
15%
PMOS
14%
Tunnel FET
14%
Subthreshold Swing
14%
P-n Junction
14%
Grain Boundary Traps
13%
Vertical Gate
13%
Nickel Silicide
13%
Poly-Si Nanowire
13%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
70%
Schottky Barrier
65%
Dielectrics
53%
Polysilicon
45%
Ion Implantation
39%
Gate Oxide
35%
Shallow Junction
32%
Barrier Height
31%
Tunnel Construction
30%
Gate Dielectric
29%
Silicon Dioxide
29%
Thin-Film Transistor
27%
Tunnel
27%
Plasma Treatment
24%
Interface State
24%
Field-Effect Transistor
22%
Low-Temperature
21%
Metal Gate
19%
Electric Field
19%
Interconnects
19%
Thin Films
18%
Field Effect Transistor
17%
Induced Damage
17%
Oxide Thickness
17%
Interfacial Layer
16%
Flash Memory
15%
Implanted Sample
15%
Tensile Stress σ
14%
Silicon Substrate
13%
Metal Oxide Semiconductor
13%
Gate Electrode
13%
Contact Area
13%
Room Temperature
13%
Compressive Stress
13%
Nanoscale
12%
Inverter
12%
Band Gap
12%
High Dielectric Constant
12%
Engineering
12%
Schottky Barrier Diode
12%
Nonvolatile Memory
12%
Design Rule
12%
Dopants
11%
Si Interface
10%
Complementary Metal-Oxide-Semiconductor
10%
Gate Stack
10%
Inductively Coupled Plasma
10%
Carbon Nanotube
10%
Two Dimensional
10%
Defect Density
10%
