Material Science
Oxide Compound
83%
Dielectric Material
82%
Film
62%
Schottky Barrier
60%
Silicon
56%
Ion Implantation
50%
Silicide
50%
Annealing
47%
Metal-Oxide-Semiconductor Field-Effect Transistor
43%
Thermal Stability
43%
Thin-Film Transistor
35%
Density
33%
Field Effect Transistor
32%
Surface (Surface Science)
31%
Electrical Resistivity
30%
Permittivity
28%
Oxidation Reaction
28%
Capacitance
24%
Capacitor
22%
Electronic Circuit
21%
Contact Resistance
20%
Metal Oxide
20%
Grain Boundary
19%
Germanium
19%
Thin Films
17%
Electrical Property
16%
Carbon Nanotube
15%
Oxide Semiconductor
14%
Silicon Carbide
14%
Doping (Additives)
12%
Ultimate Tensile Strength
12%
Nanowire
12%
Oxide Film
11%
Contact Area
11%
Al2O3
10%
Defect Density
10%
Secondary Ion Mass Spectrometry
9%
Thermal Stress
9%
Silicon Dioxide
9%
Titanium
9%
Plasma Density
9%
Thermal Conductivity
8%
Metal Deposition
8%
Nitride Compound
8%
Charge Trapping
8%
Complementary Metal-Oxide-Semiconductor Device
7%
Dry Etching
7%
Arsenic
6%
Platinum
6%
Transistor
6%
Keyphrases
4H-SiC
100%
High Performance
46%
Ion Implantation
40%
Shallow Junction
37%
Annealing
37%
Schottky Barrier
35%
HfO2
35%
MOSFET
32%
Thin-film Transistors
31%
TiSi2
30%
Thermal Stability
30%
Dielectric
28%
Gate Dielectric
28%
Oxides
27%
Silica
27%
PtSi
24%
Schottky Barrier Height
23%
Poly-Si
23%
Electrical Characteristics
23%
Gate Oxide
22%
Tunneling Layer
22%
Epitaxial
21%
Metal Gate
19%
Gate Electrode
19%
PMOSFET
19%
P-channel
18%
NiGe
17%
Fully Silicide
16%
Germanium
16%
Field Oxide
16%
Silicide
15%
Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs)
15%
Si CMOS
15%
Self-aligned
15%
Local Oxidation
15%
VDMOSFET
15%
Contact Resistivity
14%
Tunnel Field-effect Transistor
14%
Leakage Current
14%
Interfacial Layer
14%
Oxidation Mechanism
14%
Aluminum Oxide
14%
Nitrogen Ions
13%
Threshold Voltage
13%
PMOS
13%
Tunnel FET
12%
Subthreshold Swing
12%
P-n Junction
12%
Grain Boundary Traps
12%
Vertical Gate
12%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
61%
Schottky Barrier
57%
Dielectrics
49%
Polysilicon
40%
Gate Oxide
37%
Ion Implantation
35%
Silicon Dioxide
29%
Shallow Junction
28%
Barrier Height
27%
Tunnel Construction
26%
Gate Dielectric
25%
Thin-Film Transistor
24%
Tunnel
24%
Interface State
23%
Plasma Treatment
21%
Field-Effect Transistor
19%
Low-Temperature
18%
Metal Gate
17%
Electric Field
16%
Interconnects
16%
Thin Films
16%
Field Effect Transistor
15%
Induced Damage
15%
Oxide Thickness
15%
Interfacial Layer
14%
Metal Oxide Semiconductor
14%
Flash Memory
13%
Implanted Sample
13%
Tensile Stress σ
12%
Silicon Substrate
12%
Gate Electrode
11%
Contact Area
11%
Room Temperature
11%
Compressive Stress
11%
Nanoscale
11%
Inverter
11%
Band Gap
11%
High Dielectric Constant
11%
Engineering
10%
Schottky Barrier Diode
10%
Nonvolatile Memory
10%
Design Rule
10%
Dopants
9%
Si Interface
9%
Complementary Metal-Oxide-Semiconductor
9%
Gate Stack
9%
Inductively Coupled Plasma
9%
Carbon Nanotube
9%
Two Dimensional
9%
Defect Density
9%
