Projects per year
Personal profile
Research Interests
Semiconductor Physics & Devices, IC Technologies, Electrical Characterization Measurement & Analyses
Experience
Education/Academic qualification
PhD, Electronics Engineering, National Yang Ming Chiao Tung University
External positions
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Dive into the research topics where Bing-Yue Tsui is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
Projects
- 31 Finished
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碳化矽局部氧化隔離結構之抗輻射能力研究
Tsui, B.-Y. (PI)
1/08/22 → 31/07/23
Project: Government Ministry › Other Government Ministry Institute
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高壓碳化矽元件與電路之單晶片應用整合(1/2)
Tsui, B.-Y. (PI)
1/05/22 → 30/04/23
Project: Government Ministry › Other Government Ministry Institute
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SiC CMOS Device and IC Process Technology
Tsui, B.-Y. (PI)
1/05/21 → 30/04/23
Project: Government Ministry › Other Government Ministry Institute
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SiC CMOS Device and IC Process Technology
Tsui, B.-Y. (PI)
1/05/20 → 31/07/21
Project: Government Ministry › Other Government Ministry Institute
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SiC CMOS Device and IC Process Technology
Tsui, B.-Y. (PI)
1/05/19 → 30/04/20
Project: Government Ministry › Other Government Ministry Institute
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A Study of Irradiation-Induced Threshold Voltage Instability in 4H-SiC NMOSFETs With Varying Channel Lengths
Chen, C. H., Chao, D. S. & Tsui, B. Y., 2026, In: IEEE Electron Device Letters. 47, 2, p. 229-232 4 p.Research output: Contribution to journal › Article › peer-review
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Investigation of Crystal-Face-Resolved Gate Switching Instability in 4H-SiC UMOSFETs Enabled by a Source-Separated Single-Cell Structure
Liao, W. J., Hong, C. L., Hsiao, Y. K. & Tsui, B. Y., 2026, 2026 38th IEEE International Conference on Microelectronic Test Structures, ICMTS 2026 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., (IEEE International Conference on Microelectronic Test Structures).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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On the Response Time Constant of Interface Defects in Accumulation
Cheung, K. P., Wen, Y. X. & Tsui, B. Y., 2026, In: IEEE Transactions on Device and Materials Reliability. 26, 1, p. 384-386 3 p.Research output: Contribution to journal › Article › peer-review
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A Novel Separated Source Electrodes Kelvin (SSEK) Structure for Extracting Channel Mobility in the 4H-SiC VDMOSFET
Chen, W. S., Li, A. C., Hung, C. L., Hsiao, Y. K. & Tsui, B. Y., 2025, ICMTS 2025 - Proceedings of the 2025 IEEE 37th International Conference on Microelectronic Test Structures, ICMTS 2025. Institute of Electrical and Electronics Engineers Inc., (IEEE International Conference on Microelectronic Test Structures).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
2 Scopus citations -
A Symmetric 4H-SiC CMOS Inverter with Self-aligned PMOSFET Counter Doping
Chen, C. H., Chang, C. S., Huang, H. L., Wang, C. Y., Tsai, C. Y., Chen, Y. Y., Chen, H. M., Yen, C. H. & Tsui, B. Y., 2025, 2025 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2025 - Proceedings of Technical Papers. Institute of Electrical and Electronics Engineers Inc., (2025 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2025 - Proceedings of Technical Papers).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review