Projects per year
Personal profile
Research Interests
Semiconductor Physics & Devices, IC Technologies, Electrical Characterization Measurement & Analyses
Experience
Education/Academic qualification
PhD
External positions
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Dive into the research topics where Bing-Yue Tsui is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
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SiC CMOS Device and IC Process Technology
1/05/21 → 30/04/22
Project: Government Ministry › Ministry of Science and Technology
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SiC CMOS Device and IC Process Technology
1/05/20 → 31/07/21
Project: Government Ministry › Ministry of Science and Technology
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SiC CMOS Device and IC Process Technology
1/05/19 → 30/04/20
Project: Government Ministry › Ministry of Science and Technology
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碳化矽單晶片功率系統平台-大型儀器(總計畫)-碳化矽蝕刻系統(碳化矽互補式金氧半場效應電晶體元件與積體電路製程技術)
1/05/18 → 30/04/19
Project: Government Ministry › Ministry of Science and Technology
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SiC CMOS Device and IC Process Technology
1/05/18 → 30/04/19
Project: Government Ministry › Ministry of Science and Technology
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1100 V, 22.9 mΩcm24H-SiC RESURF Lateral Double-Implanted MOSFET with Trench Isolation
Hu, J. W., Jiang, J. Y., Chen, W. C., Huang, C. F., Wu, T-L., Lee, K. Y. & Tsui, B. Y., Oct 2021, In: IEEE Transactions on Electron Devices. 68, 10, p. 5009-5013 5 p.Research output: Contribution to journal › Article › peer-review
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High voltage gain 4H-SIC CMOS technology featuring LOCal oxidation of SiC (LOCOSiC) isolation and balanced gate dielectric
Tsui, B. Y., Hung, C. L., Jhuang, Y. R., Huang, Y. T., Cheng, J. C., Lu, F. H., Shih, Y. T., Lee, Y. H., Chen, L. Y., Chuang, F. H. & Li, P. W., 19 Apr 2021, VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc., 9440126. (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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Time-dependent dielectric breakdown of gate oxide on 4H-SiC with different oxidation processes
Tsui, B. Y., Huang, Y. T., Wu, T-L. & Chien, C. H., Aug 2021, In: Microelectronics Reliability. 123, 114186.Research output: Contribution to journal › Article › peer-review
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Degradation Mechanism of Ge N+-P Shallow Junction with Thin GeSn Surface Layer
Tsui, B. Y., Liao, H. H. & Chen, Y. J., Mar 2020, In: IEEE Transactions on Electron Devices. 67, 3, p. 1120-1125 6 p., 8964438.Research output: Contribution to journal › Article › peer-review
3 Scopus citations -
Demonstration of CMOS Integration with High-Voltage Double-Implanted MOS in 4H-SiC
Jiang, J. Y., Hung, J. C., Lo, K. M., Huang, C. F., Lee, K. Y. & Tsui, B. Y., 2020, (Accepted/In press) In: Ieee Electron Device Letters.Research output: Contribution to journal › Article › peer-review