Projects per year
Personal profile
Research Interests
Semiconductor Physics & Devices, IC Technologies, Electrical Characterization Measurement & Analyses
Experience
Education/Academic qualification
PhD, Electronics Engineering, National Yang Ming Chiao Tung University
External positions
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Dive into the research topics where Bing-Yue Tsui is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
Projects
- 31 Finished
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碳化矽局部氧化隔離結構之抗輻射能力研究
Tsui, B.-Y. (PI)
1/08/22 → 31/07/23
Project: Government Ministry › Other Government Ministry Institute
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高壓碳化矽元件與電路之單晶片應用整合(1/2)
Tsui, B.-Y. (PI)
1/05/22 → 30/04/23
Project: Government Ministry › Other Government Ministry Institute
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SiC CMOS Device and IC Process Technology
Tsui, B.-Y. (PI)
1/05/21 → 30/04/23
Project: Government Ministry › Other Government Ministry Institute
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SiC CMOS Device and IC Process Technology
Tsui, B.-Y. (PI)
1/05/20 → 31/07/21
Project: Government Ministry › Other Government Ministry Institute
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SiC CMOS Device and IC Process Technology
Tsui, B.-Y. (PI)
1/05/19 → 30/04/20
Project: Government Ministry › Other Government Ministry Institute
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A 4H-SiC Trench MOS Capacitor Structure for Sidewall Oxide Characteristics Measurement
Huang, H. L., Hsuesh, L. T., Tu, Y. C. & Tsui, B. Y., 2024, 2024 IEEE 36th International Conference on Microelectronic Test Structures, ICMTS 2024 - Proceedings. Institute of Electrical and Electronics Engineers Inc., (IEEE International Conference on Microelectronic Test Structures).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
1 Scopus citations -
A Recessed Source Contact Technology to Reduce the Specific On-Resistance of Power MOSFET on 4H-SiC
Tsui, B. Y., Hsiao, J. T., Wang, M. H., Hung, C. L., Hsiao, Y. K., Yao, J. N., Chiang, K. H., Ho, C. & Kuo, H. C., 2024, In: Ieee Electron Device Letters. 45, 10, p. 1930-1932 3 p.Research output: Contribution to journal › Article › peer-review
1 Scopus citations -
Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET
Hsiao, J. T., Hung, C. L., Hsiao, Y. K. & Tsui, B. Y., 2024, Solid State Phenomena. Trans Tech Publications Ltd., p. 145-149 5 p. (Solid State Phenomena; vol. 359).Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review
Open Access -
Improving Radiation Hardness of 4H-SiC Power Devices by Local-Oxidation of Silicon Carbide (LOCOSiC) Isolation
Tsui, B. Y., Wang, C. H., Lai, S. H., Shih, C. P., Chen, Q. H. & Chao, D. S., 1 Feb 2024, In: Ieee Electron Device Letters. 45, 2, p. 228-231 4 p.Research output: Contribution to journal › Article › peer-review
1 Scopus citations -
Influence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiC
Wang, C. H., Lin, L. J., Hung, C. L., Hsiao, Y. K. & Tsui, B. Y., 2024, Solid State Phenomena. Trans Tech Publications Ltd., p. 211-215 5 p. (Solid State Phenomena; vol. 359).Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review
Open Access