Projects per year
Personal profile
Experience
2013/1 ~ 2014/1 Post-Doctoral Position, Physics Department, Keck Computational Laboratory, California State University Northridge (CSUN), USA
2014/9 ~ 2017/7 Post-Doctoral Position, Department of Materials Science and Engineering, National Tsing Hua University (NTHU), Taiwan
2017/8 ~ present Assistant Professor, International College of Semiconductor Technology, National Chiao Tung University, Taiwan
Education/Academic qualification
PhD, Theory in Solid State Physics, Kazan Volga Region Federal University
External positions
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Dive into the research topics where Artur Useinov is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
Projects
- 5 Finished
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二維材料和低維半導體元件的先進研究
Useinov, A. (PI)
1/08/22 → 31/07/23
Project: Government Ministry › Other Government Ministry Institute
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Physics of quantum structures and spin electronics
Useinov, A. (PI)
1/08/21 → 31/07/22
Project: Government Ministry › Other Government Ministry Institute
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量子異質結構和自旋電子器件
Useinov, A. (PI)
1/08/20 → 31/07/21
Project: Government Ministry › Other Government Ministry Institute
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量子異質結構和自旋電子器件
Useinov, A. (PI)
1/08/19 → 31/07/20
Project: Government Ministry › Other Government Ministry Institute
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量子異質結構和自旋電子器件
Useinov, A. (PI)
1/08/18 → 31/07/19
Project: Government Ministry › Other Government Ministry Institute
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Synthesis and Phase Transition of Large-Area Layered Ferroelectric Semiconductor α-In2Se3 via 2D Solid-Phase Crystallization
Hsu, C. P., Useinov, A., Woon, W. Y., Liao, S. & Hou, T. H., Jul 2024, In: Advanced Electronic Materials. 10, 7, 2300880.Research output: Contribution to journal › Article › peer-review
Open Access -
Thermal stability, work function and Fermi level analysis of 2D multi-layered hexagonal boron nitride films
Marye, S. A., Kumar, R. R., Useinov, A. & Tumilty, N., 1 Jan 2024, In: Microelectronic Engineering. 283, 112106.Research output: Contribution to journal › Article › peer-review
5 Scopus citations -
WKB model of ferroelectric tunnel junctions for memory applications: voltage-dependent screening and electrostriction effects
Jagga, D., De, S. & Useinov, A., 2024, IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024. Institute of Electrical and Electronics Engineers Inc., (IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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Influence of electrostriction and voltage-induced screening effects on the tunnel electroresistance in tunnel junctions with composite ferroelectric barriers
Jagga, D. & Useinov, A., 28 Sep 2023, In: Journal of Applied Physics. 134, 12, 124101.Research output: Contribution to journal › Article › peer-review
2 Scopus citations -
Magnetic anomalies in polyphthalocyanines with Fe-, Ni- and Co- magnetic centers
Jagga, D., Useinov, A., Korepanov, V. I. & Sedlovets, D. M., Oct 2023, In: Physica E: Low-Dimensional Systems and Nanostructures. 154, 115795.Research output: Contribution to journal › Article › peer-review
1 Scopus citations