Albert Chin

Professor

Calculated based on number of publications stored in Pure and citations from Scopus
Calculated based on number of publications stored in Pure and citations from Scopus
Calculated based on number of publications stored in Pure and citations from Scopus
1987 …2024

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  • 2020

    Electrical Characteristics of Magnesium Doped a-IGZO RRAM: Chemical Vapor Deposition using Enhanced Atmospheric Pressure-Plasma

    Wu, C. H., Kuo, S. N., Chen, Y. M., Chang, K. M., Yang, Y. & Chin, A., 23 Oct 2020, 2nd IEEE Eurasia Conference on IOT, Communication and Engineering 2020, ECICE 2020. Meen, T.-H. (ed.). Institute of Electrical and Electronics Engineers Inc., p. 121-124 4 p. 9301987. (2nd IEEE Eurasia Conference on IOT, Communication and Engineering 2020, ECICE 2020).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    4 Scopus citations
  • 2019

    High mobility metal-oxide devices for display SoP and 3D brain-mimicking IC

    Chin, A., Yen, T. J., Shih, C. W. & Chen, Y. D., Nov 2019, 26th International Display Workshops, IDW 2019. International Display Workshops, p. 455-457 3 p. (Proceedings of the International Display Workshops; vol. 2).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    5 Scopus citations
  • Technologies Toward Three-Dimensional Brain-Mimicking IC Architecture

    Chin, A. & Chen, Y. D., Mar 2019, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., p. 472-474 3 p. 8731323. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    10 Scopus citations
  • 2017

    Impact of current distribution on RRAM array with high and low Ion/Ioff devices

    Zackriya, V. M., Chin, A. & Kittur, H. M., 13 Jun 2017, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 156-157 2 p. 7947557. (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    7 Scopus citations
  • 2016

    Ferroelectric, small bandgap and wide bandgap materials for ultra-low power green electronic devices

    Chin, A., Shih, C. W., Kan, K. Z. & Chen, T., 2016, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings. Jiang, Y.-L., Tang, T.-A. & Huang, R. (eds.). Institute of Electrical and Electronics Engineers Inc., p. 14-17 4 p. 7998826. (2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations
  • High mobility SnO2 TFT for display and future IC

    Chin, A., Shih, C. W., Lu, C. F. & Su, W. F., 15 Aug 2016, Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., p. 294-297 4 p. 7543695. (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    3 Scopus citations
  • Trapping and detrapping of oxide border traps in Al2O3 gate dielectric in MoS2 n-MOSFETs under PBTI stress

    Yuan, H. W., Shen, H., Li, J. J., Shao, J., Huang, D., Chen, Y. F., Wang, P. F., Ding, S. J., Chin, A. & Li, M. F., 2016, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings. Jiang, Y.-L., Tang, T.-A. & Huang, R. (eds.). Institute of Electrical and Electronics Engineers Inc., p. 481-483 3 p. 7998957. (2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • 2015

    Extremely high mobility ultra-thin metal-oxide with ns2np2 configuration

    Shih, C. W., Chin, A., Lu, C. F. & Yi, S. H., 16 Feb 2015, 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., p. 6.6.1-6.6.4 7409642. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2016-February).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    12 Scopus citations
  • Ultra-low power green electronic devices

    Yi, S. H. & Chin, A., 30 Sep 2015, Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015. Institute of Electrical and Electronics Engineers Inc., p. 285-288 4 p. 7285106. (Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • 2014

    High-gain DR circular patch on-chip antenna based on standard CMOS technology for millimeter-wave applications

    Wang, Y. B., Liu, J. Q., Li, J. L. W. & Chin, A., 20 Nov 2014, IEEE iWEM 2014 - IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition. Institute of Electrical and Electronics Engineers Inc., p. 159-160 2 p. 6963685. (IEEE iWEM 2014 - IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    3 Scopus citations
  • High performance n+/p junction technology for high mobility Ge nMOSFET

    Chin, A. & Yi, S. H., 2014, 2014 International Workshop on Junction Technology, IWJT 2014. IEEE Computer Society, p. 140-143 4 p. 6842048. (2014 International Workshop on Junction Technology, IWJT 2014).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Investigation of a miniature and high gain on-chip v band microstrip antenna

    Xie, L. Y., Liu, J. Q., Wang, Y. B., Chuang, C., Chin, A., Li, J. L. W. & Kang, K., Aug 2014, Progress in Electromagnetics Research Symposium. Electromagnetics Academy, p. 383-385 3 p. (Progress in Electromagnetics Research Symposium).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • 2013

    A low operating voltage IGZO TFT using LaLuO3 gate dielectric

    Chou, K. I., Hsu, H. H., Cheng, C. H., Lee, K. Y., Li, S. R. & Chin, A., 23 Dec 2013, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 6628219. (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations
  • Current uniformity improvement in flexible resistive memory

    Zheng, Z. W., Cheng, C. H., Chou, K. I., Liu, M. & Chin, A., 2013, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 6628193. (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • GeO2/PZT resistive random access memory devices with Ni electrode

    Chou, K. I., Cheng, C. H. & Chin, A., 2013, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 6628194. (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • High performance RF passive devices and noise-shielding MOSFET on IC-standard Si wafer for sub-THz applications

    Chin, A. & Kao, H. L., 2013, 2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013. p. 107-109 3 p. 6695206. (Asia-Pacific Microwave Conference Proceedings, APMC).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Ultra-low switching power rram using hopping conduction mechanism

    Chin, A., Cheng, C. H., Chiu, Y. C., Zheng, Z. W. & Liu, M., 2013, Dielectric Materials and Metals for Nanoelectronics and Photonics 10. 4 ed. Electrochemical Society Inc., p. 3-8 6 p. (ECS Transactions; vol. 50, no. 4).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    4 Scopus citations
  • 2012

    A 2.4 GHz CMOS power amplifier using asymmetric MOSFETs

    Liu, S. L., Huang, Y. C., Chen, Y. J., Chang, T. & Chin, A., 2012, 2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings. p. 490-492 3 p. 6421640. (Asia-Pacific Microwave Conference Proceedings, APMC).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • Advanced metal-gate/high-κ CMOS with small EOT and better high field mobility

    Chin, A., Chen, W. B., Chen, P. C., Wu, Y. H., Chi, C. C., Lee, Y. J., Chang-Liao, K. S. & Kuan, C. H., 2012, ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 6467936. (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • High-κ gate dielectrics for Ge CMOS and related memory devices

    Chin, A., Chen, P. C., Cheng, C. H., Wu, Y. H., Liu, X. Y. & Kang, J. F., 30 Jul 2012, 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. p. 64-65 2 p. 6222459. (2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Investigation of schottky junction and mos technology for 111-v compound semiconductor mosfet application

    Chen, J., Ku, T. C., Li, M. F. & Chin, A., 2012, IWJT 2012 - 2012 12th International Workshop on Junction Technology. Jiang, Y.-L., Qu, X.-P., Ru, G.-P. & Li, B.-Z. (eds.). Institute of Electrical and Electronics Engineers Inc., p. 127-130 4 p. (IWJT 2012 - 2012 12th International Workshop on Junction Technology; vol. 2012-January).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations
  • 2011

    Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

    Gao, B., Kang, J. F., Chen, Y. S., Zhang, F. F., Chen, B., Huang, P., Liu, L. F., Liu, X. Y., Wang, Y. Y., Tran, X. A., Wang, Z. R., Yu, H. Y. & Chin, A., 2011, 2011 International Electron Devices Meeting, IEDM 2011. p. 17.4.1-17.4.4 6131573. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    40 Scopus citations
  • Size-dependent trapping effect in nano-dot non-volatile memory

    Tsai, C.-Y., Cheng, C. H., Chang, T. Y., Chou, K. Y., Chin, A. & Yeh, F. S., 2011, Physics and Technology of High-k Materials 9. 3 ed. Electrochemical Society Inc., p. 121-132 12 p. (ECS Transactions; vol. 41, no. 3).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • The reliability study and device modeling for p-HEMT microwave power transistors

    Liu, S. L., Chang, H. M., Chang, T., Kao, H. L., Cheng, C. H. & Chin, A., 2011, State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53. 6 ed. Electrochemical Society Inc., p. 175-187 13 p. (ECS Transactions; vol. 41, no. 6).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • 2010

    Higher κ metal-gate/high-κ/Ge n-MOSFETs with <1 nm EOT using laser annealing

    Chen, W. B., Shie, B. S., Chin, A., Hsu, K. C. & Chi, C. C., 1 Dec 2010, 2010 IEEE International Electron Devices Meeting, IEDM 2010. 5703385. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    13 Scopus citations
  • Highly-scaled 3.6-nm ENT trapping layer MONOS device with good retention and endurance

    Tsai, C.-Y., Lee, T. H., Chin, A., Wang, H., Cheng, C. H. & Yeh, F. S., 2010, 2010 IEEE International Electron Devices Meeting, IEDM 2010. p. 5.4.1-5.4.4 5703302. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    14 Scopus citations
  • High performance ultra-low energy RRAM with good retention and endurance

    Cheng, C. H., Tsai, C.-Y., Chin, A. & Yeh, F. S., 2010, 2010 IEEE International Electron Devices Meeting, IEDM 2010. p. 19.4.1-19.4.4 5703392. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    46 Scopus citations
  • Metal-gate/high-κ CMOS scaling from Si to Ge at small EOT

    Chin, A., Chen, W. B., Shie, B. S., Hsu, K. C., Chen, P. C., Cheng, C. H., Chi, C. C., Wu, Y. H., Chaing-Liaoc, K. S., Wang, S. J., Kuan, C. H. & Yeh, F. S., 1 Dec 2010, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 836-839 4 p. 5667443. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations
  • Novel ultra-low power RRAM with good endurance and retention

    Cheng, C. H., Chin, A. & Yeh, F. S., 2010, 2010 Symposium on VLSI Technology, VLSIT 2010. p. 85-86 2 p. 5556180. (Digest of Technical Papers - Symposium on VLSI Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    89 Scopus citations
  • Very high performance non-volatile memory on flexible plastic substrate

    Cheng, C. H., Chou, K. Y., Chin, A. & Yeh, F. S., 1 Dec 2010, 2010 IEEE International Electron Devices Meeting, IEDM 2010. 5703408. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    5 Scopus citations
  • 2009

    Design of dual-passband microstrip bandpass filters with suppression of higher order spurious response

    Jiang, M., Chang, L. M. & Chin, A., 1 Dec 2009, APMC 2009 - Asia Pacific Microwave Conference 2009. p. 2060-2063 4 p. 5385305. (APMC 2009 - Asia Pacific Microwave Conference 2009).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    4 Scopus citations
  • Improved device characteristics in charge-trapping-engineered flash memory using high-κ dielectrics

    Chin, A., Lin, S. H., Tsai, C.-Y. & Yeh, F. S., 2009, ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6 ed. Electrochemical Society Inc., p. 447-455 9 p. (ECS Transactions; vol. 25, no. 6).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations
  • Improved retention and cycling characteristics of MONOS memory using charge-trapping engineering

    Chin, A., Lin, S. H., Yang, H. J., Tsai, C.-Y., Yeh, F. S., Liao, C. C. & Li, M. F., 16 Nov 2009, Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009. p. 641-645 5 p. 5232561. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    4 Scopus citations
  • 2008

    A CMOS-compatible, high RF power,Asymmetric-LDD MOSFET with excellent linearity

    Chang, T., Kao, H. L., Chen, Y. J., Liu, S. L., McAlister, S. P. & Chin, A., 2008, 2008 IEEE International Electron Devices Meeting, IEDM 2008. 4796724. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    11 Scopus citations
  • Gate-first low vt Al/TaN/Ir/HfLaO p-mosfet using simple laser annealing

    Su, N. C., Wu, C. H., Chang, M. F., Huang, J. Z., Wang, S. J., Lee, W. C., Lee, P.-T., Kao, H. L. & Chin, A., 2008, 66th DRC Device Research Conference Digest, DRC 2008. p. 71-72 2 p. 4800739. (Device Research Conference - Conference Digest, DRC).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Good 150 °C retention and fast erase characteristics in charge-trap-engineered memory having a scaled Si 3 N 4 Layer

    Lin, S. H., Chin, A., Yeh, F. S. & McAlister, S. P., 2008, 2008 IEEE International Electron Devices Meeting, IEDM 2008. 4796829. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Open Access
    10 Scopus citations
  • High performance Ir/TiPrO/tan MIM capacitors for analog ICs Application

    Huang, C. C., Cheng, C. H., Chin, A. & Chou, C. P., 1 Dec 2008, ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5 ed. p. 341-352 12 p. (ECS Transactions; vol. 16, no. 5).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Improved 150°C retention in Hf o.3O o.5N 0.2 memory device with low voltage and fast writing

    Lin, S. H., Yang, H. J., Kao, H. L., Yeh, F. S. & Chin, A., 2008, 66th DRC Device Research Conference Digest, DRC 2008. p. 61-62 2 p. 4800734. (Device Research Conference - Conference Digest, DRC).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Improved high temperature retention and endurance in HfON trapping memory with double quantum barriers

    Chin, A., Yang, H. J., Lin, S. H., Liao, C. C., Chen, W. J. & Yeh, F. S., 1 Dec 2008, ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. p. 811-814 4 p. 4734666. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Improved lower electrode oxidation of high-k TiCeO metal-insulator-metal capacitors by using a novel plasma treatment

    Cheng, C. H., Hsu, H. H., Deng, C. K., Chin, A. & Chou, C. P., 1 Dec 2008, ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5 ed. p. 323-333 11 p. (ECS Transactions; vol. 16, no. 5).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • Low Vt gate-first Al/TaN/[Ir3Si-HfSi 2-x]/HfLaON CMOS using simple laser annealing/reflection

    Liao, C. C., Chin, A., Su, N. C., Li, M. F. & Wang, S. J., 2008, 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT. p. 190-191 2 p. 4588614. (Digest of Technical Papers - Symposium on VLSI Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    21 Scopus citations
  • National Project on 45 to 32 nm metal oxide semiconductor field effect transistors for next century IC fabrications

    Hwang, H. L., Wang, C. W., Chang, K. H., Tsai, C. H., Leou, K. C., Chang-Liao, K. S., Lu, C. C., Chang, S. C., Chiu, F. C., Liu, C. H., Chin, A., Chang, K.-M. & Chen, B. N., 1 Dec 2008, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC. 4760691. (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • 2007

    A 2.4/5 GHz dual-band VCO using a variable inductor and switched resonator

    Kao, H. L., Yang, D. Y., Chin, A. & McAlister, S. P., 2007, 2007 IEEE MTT-S International Microwave Symposium Digest. p. 1533-1536 4 p. 4264134. (IEEE MTT-S International Microwave Symposium Digest).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    13 Scopus citations
  • A low-power current-reuse LNA for ultra-wideband wireless receivers from 3.1 to 10.6 GHz

    Kao, H. L., Chin, A., Chang, K. C. & McAlister, S. P., 2007, 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07. p. 257-260 4 p. 4117374. (2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    20 Scopus citations
  • Improvement of the performance of strained 0.13 μm MOSFETs mounted on flexible plastic substrates

    Kao, H. L., Liao, C. C., McAlister, S. P. & Chin, A., 2007, 2007 International Semiconductor Device Research Symposium, ISDRS. 4422523. (2007 International Semiconductor Device Research Symposium, ISDRS).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • Low threshold voltage and high drive current poly-silicon thin film transistors using ytterbium metal gate and LaALO3 dielectric

    Hung, B. F., Wu, C. H., Chin, A., Wang, S. J., Lin, J. W. & Hsieh, I. J., Mar 2007, AD'07 - Proceedings of Asia Display 2007. p. 1190-1193 4 p. (AD'07 - Proceedings of Asia Display 2007; vol. 2).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Study of low-temperature and post-stress hysteresis in high-k gate dielectrics

    Wu, Y. L., Lin, S. T., Yang, C. C., Wu, C. H. & Chin, A., 2007, 2007 International Semiconductor Device Research Symposium, ISDRS. 4422317. (2007 International Semiconductor Device Research Symposium, ISDRS).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Study of low-temperature and post-stress hysteresis in high-k gate dielectrics

    Wu, Y. L., Lin, S. T., Yang, C. C., Wu, C. H. & Chin, A., 1 Dec 2007, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. p. 653-656 4 p. 4450209. (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • Very low noise in 90nm node RF MOSFETs using a new layout

    Kao, H. L., Chin, A., Liao, C. C. & McAlister, S. P., 2007, 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07. p. 44-47 4 p. 4117321. (2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations
  • 2006

    A novel high-k gate dielectric HfLaO for next generation CMOS technology

    Li, M. F., Wang, X. P., Yu, H. Y., Zhu, C. X., Chin, A., Du, A. Y., Shao, J., Lu, W., Shen, X. C., Liu, P., Hung, S., Lo, P. & Kwong, D. L., 1 Jan 2006, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, p. 372-375 4 p. 4098112. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    4 Scopus citations