Albert Chin

Professor

Calculated based on number of publications stored in Pure and citations from Scopus
Calculated based on number of publications stored in Pure and citations from Scopus
Calculated based on number of publications stored in Pure and citations from Scopus
1987 …2024

Research activity per year

Network

Dim Lee Kwong

  • Department of Electrical and Computer Engineering
  • University of Texas at Austin
  • Agency for Science, Technology and Research, Singapore
  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Dept. of Electrical Eng.
  • Dept. of Electrical Engineering
  • Dept of EEE
  • Hong Kong University of Science and Technology
  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University
  • IEEE
  • ECE Depart.
  • Dept. of Electrical and Computer Engineering
  • Si Nano Device Lab.
  • Department of Electrical Engineering and Computer Science
  • University of California at Berkeley
  • Dept. Electrical and Computer Eng.
  • Department of Electrical Engineering
  • Dept. Electrical and Computer Eng.
  • Dept. Electrical and Computer Eng.
  • Toshiba Corporation
  • Univ. of Texas

External person

Ming Fu Li

  • Silicon Nano Device Laboratory
  • National University of Singapore
  • Agency for Science, Technology and Research, Singapore
  • Silicon Nano Device Lab.
  • Si Nano Device Lab.
  • Fudan University
  • Dept. of Microelectronics
  • Microelectronics Dept.
  • Silicon Nano Device Lab (SNDL)

External person

C. X. Zhu

  • Silicon Nano Device Laboratory
  • National University of Singapore
  • Silicon Nano Device Lab.
  • Si Nano Device Lab.
  • Jusung Engineering Co., Ltd.
  • Agency for Science, Technology and Research, Singapore
  • Silicon Nano Device Lab (SNDL)
  • Silicon Nano Device Laboratory
  • Silicon Nano Devices Laboratory
  • Silicon Nana Device Lab (SNDL)

External person

S. P. McAlister

  • National Research Council of Canada
  • Inst. for Microstructural Sciences
  • Institute for Microstructural Sciences
  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Institute for Microstructural Sciences
  • IEEE

External person

Chun Hu Cheng

  • Department of Mechantronic Technology
  • National Taiwan Normal University
  • Dept. of Mechatronic Engineering
  • Department of Electronics Engineering and Institute of Electronics Engineering
  • National Tsing Hua University
  • Department of Electrical Engineering
  • Department of Mechatronic Technology
  • Department of Electrical Engineering
  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University
  • Department of Mechanical Engineering
  • Chung-shan Institute of Science and Technology Taiwan
  • Department of Electrical Engineering
  • Dept. of Mechanical Eng.
  • Institute of Electronic Engineering
  • E.E. Dept.
  • Department of EE
  • Department of Mechanical Engineering
  • Taiwan Semiconductor Manufacturing Company
  • Department of Electronics Engineering and Institute of Electronics
  • Department of Electrical Engineering
  • Natl Taiwan Normal Univ, National Taiwan Normal University, Dept Mechatron Engn

External person

W. B. Chen

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University
  • Dept. of Mech. Materials Engineering
  • National Formosa University
  • Dept. of Mech. Materials Engineering
  • National Huwei Institute
  • National Pingtung University of Science and Technology
  • Graduate Institute of Materials Engineering
  • National Yunlin University of Science and Technology
  • Graduate School of Materials Science
  • Dept. of Mech. Materials Engineering
  • Inst. of Electronics and Info. Eng.
  • Department of Mechanical Engineering
  • Graduate Inst, of Materials Eng.
  • Department of Materials Science and Engineering

External person

F. S. Yeh

  • Department of EE
  • National Tsing Hua University
  • Department of Electronics Engineering and Institute of Electronics Engineering
  • Department of Electrical Engineering
  • Department of Electrical Engineering
  • Department of Electrical Engineering
  • Institute of Electronic Engineering
  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Department of Electrical Engineeriing
  • Department of Electrical Engineering
  • Dept. of Mechanical Eng.
  • Institute of Electrical Engineering
  • Department of Electrical Engineering

External person

Hsuan Ling Kao

  • Department of Electronic Engineering
  • Chang Gung University
  • Department of Electronic Engineering
  • Department of Electronics Eng.
  • National Yang Ming Chiao Tung University
  • Technology Development Center
  • Macronix International Co., Ltd. Taiwan
  • Department O Electronics Engineering
  • Institute of Electronics Engineering
  • Univ. System of Taiwan
  • Dept. of E.E.
  • Department of Electrical Engineering
  • Institute of Electronics
  • Department of Electronic Engineering
  • Dept. of Electronics Engineering
  • Dept. of EE
  • Dept. of Electronics Eng.
  • Nat'l Chiao-Tung U.
  • Dept. of EE
  • Chang Gung Memorial Hospital

External person

Chih Feng Huang

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Dept. Electronics Eng. Inst. E.
  • Department of Electrical Engineering
  • Department of Electrical Engineering
  • Department of Electronics Engineering and Institute of Electronics
  • Department of Electronics Eng.
  • Institute of Imaging and Biomedical Photonics
  • Dept. of Electronics Engineering
  • Taiwan Semiconductor Manufacturing Company
  • Research Development Center
  • Department of Electrical Engineering
  • National Sun Yat-sen University
  • Institute of Electronics
  • Panel Design Dept.
  • Chunghwa Picture Tubes, Ltd.
  • Department of Electrical and Control Engineering
  • Department of Panel Design
  • Central Research Institute
  • Dept. of EE
  • Department of Computer Science and Information Engineering
  • Nan Kai University of Technology
  • Panel Design Dept.
  • R and D Center
  • Nat'l Chiao-Tung U.
  • Dept. of EE

External person

V. A. Gritsenko

  • Novosibirsk State University
  • RAS - Institute of Semiconductor Physics, Siberian Branch
  • Novosibirsk State Technical University
  • RAS - Siberian Branch
  • Novosibirsk State Tech Univ, Novosibirsk State Technical University

External person

A. Y. Du

  • Agency for Science, Technology and Research, Singapore
  • Dept of EEE
  • National University of Singapore
  • University of Texas at Austin
  • Hong Kong University of Science and Technology
  • Department of Electrical and Computer Engineering
  • Silicon Nano Device Laboratory
  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University
  • Fudan University
  • Dept. of Microelectronics
  • Institute of Microelectronics
  • Institute of Microclcctromcs
  • Silicon Nano Device Laboratory

External person

C. C. Liao

  • Department of Electronics Eng.
  • National Yang Ming Chiao Tung University
  • Department O Electronics Engineering
  • Department of Electrical Engineering
  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Fudan University
  • Microelectronics Dept.
  • Department of Electrical Engineering
  • E.E. Dept.
  • Department of Electrical Engineering
  • Chung-Hua Polytechnic Institute
  • Dept. of Electronics Engineering
  • Nat'l Chiao-Tung U.
  • Dept. of EE
  • Department of Electrical Engineering
  • Chung Hua University
  • Dept. of EE

External person

K. C. Chiang

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • IEEE
  • Department of Electrical Engineering
  • Department of Electrical Engineering
  • Department of Materials Science and Engineering
  • Department of Electronics Eng.
  • Institute of Electronics Engineering
  • Institute of Electronics
  • Dept. of Electronics Engineering
  • Dept. of EE
  • Department of Electrical Engineering
  • National Tsing Hua University
  • Center for Nano Science and Technology
  • Nat'l Chiao-Tung U.
  • Dept. of EE

External person

D. S. Yu

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Department of Electronics Eng.
  • Department of Electrical Engineering
  • Department of Electrical Engineering
  • Dept. of Electronics Eng.
  • Univ. System of Taiwan
  • Center for Nano Science and Technology
  • Dept. of Electronics Engineering

External person

Byung Jin Cho

  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Silicon Nano Device Lab.
  • Si Nano Device Lab.

External person

C. C. Chi

  • Department of Physics
  • National Tsing Hua University
  • Department of Physics
  • National Yang Ming Chiao Tung University

External person

C. H. Wu

  • Institute of Microelectronics
  • National Cheng Kung University
  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University
  • Department O Electronics Engineering
  • Department of Electronics Eng.
  • Department of Electrical Engineering
  • Chung Hua University
  • Institute of Electronics Engineering
  • Department of Electrical Engineering
  • Department of Microelectronics Engineering
  • Department of Electrical Engineering
  • Inst. of Microelectronics
  • Department of Electronics Engineering
  • Dept. of Electronics Engineering
  • Institute of Microelectronics
  • Department of Electrical Engineering
  • Department of Electronics Engineering
  • Taiwan Semicond Mfg Co, Taiwan Semiconductor Manufacturing Company, Corp Res

External person

S. J. Wang

  • Institute of Microelectronics
  • National Cheng Kung University
  • Department of Electrical Engineering
  • Department of Electrical Engineering
  • Inst. of Microelectronics
  • Institute of Microelectronics
  • Advanced Optoelectronic Technology Center

External person

X. F. Yu

  • Silicon Nano Device Laboratory
  • National University of Singapore
  • Si Nano Device Lab.
  • Silicon Nano Device Lab.

External person

Bing Fang Hung

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Department of Electrical Engineering
  • Department of Electronics Eng.
  • Dept. of EE
  • Dept. of Electronics Engineering
  • Institute of Electronics
  • Nat'l Chiao-Tung U.
  • Dept. of EE

External person

Ming Fu Li

  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Agency for Science, Technology and Research, Singapore
  • Dept of EEE
  • University of Texas at Austin
  • Hong Kong University of Science and Technology
  • Department of Electrical and Computer Engineering
  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University
  • Fudan University
  • Dept. of Microelectronics
  • Silicon Nano Device Laboratory
  • Silicon Nano Devices Laboratory
  • Institute of Microclcctromcs
  • Silicon Nana Device Lab (SNDL)

External person

D. S.H. Chan

  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Silicon Nano Device Lab.
  • Si Nano Device Lab.
  • Jusung Engineering Co., Ltd.
  • Dept of EEE
  • University of Texas at Austin
  • Hong Kong University of Science and Technology
  • Department of Electrical and Computer Engineering
  • Department of Electrical Engineering
  • Agency for Science, Technology and Research, Singapore
  • National Yang Ming Chiao Tung University
  • Silicon Nano Device Laboratory

External person

Chih Chang Cheng

  • Department of Electrical Engineering
  • IEEE
  • National Yang Ming Chiao Tung University
  • Department O Electronics Engineering
  • Department of Electronics Eng.
  • National Nano Device Laboratories Taiwan
  • Taiwan Semiconductor Manufacturing Company
  • Dept. of EE
  • Center for Nano Science and Technology

External person

S. H. Lin

  • Department of EE
  • National Tsing Hua University
  • Department of Electrical Engineering
  • Nano-Electronics Consortium of Taiwan
  • Department of Electrical Engineeriing
  • Department of Electrical Engineering
  • Department of Electrical Engineering

External person

K. T. Chan

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Department of Electrical Engineering
  • Dept. of Electronics Engineering
  • Department of Electronics Eng.
  • Department of Electrical Engineering
  • MediaTek

External person

Y. C. Yeo

  • National University of Singapore
  • Silicon Nano Device Laboratory
  • University of California at Berkeley
  • Department of Electrical Engineering and Computer Science
  • Taiwan Semiconductor Manufacturing Company
  • Department of EECS
  • Department of Electrical Engineering and Computer Sciences
  • Agency for Science, Technology and Research, Singapore
  • Department of Electrical Engineering and Computer Sciences
  • Department of Electrical Engineering and Computer Sciences
  • Silicon Nano Device Lab.
  • Department of Materials Science and Engineering
  • Silicon Nano Device Lab (SNDL)
  • Department of Electrical Engineering and Computer Science
  • IEEE
  • Technology
  • Department of Electrical Engineering and Computer Sciences
  • Silicon Nano Devices Laboratory
  • Department of Electrical Engineering
  • Silicon Nana Device Lab (SNDL)
  • Department of Electrical Engineering and Computer Sciences
  • Department of Electrical Engineering
  • Department of Materials Science and Engineering

External person

Chien Chang Chen

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University
  • Department O Electronics Engineering
  • Institute of Electronics
  • Dept. of Electronics Eng.
  • Univ. System of Taiwan
  • Research Group of Biomedical Image Processing
  • Department of Electronics Eng.
  • United Microelectronics Corporation
  • Shing-Tung Yau Center
  • National Central University
  • Bio-Microsystems Integration Laboratory
  • Institute of Electronics Engineering
  • Bio-Microsystems Integration Laboratory
  • Institute of Electronics Engineers
  • Nutional Tung University

External person

H. Y. Yu

  • Interuniversitair Micro-Elektronica Centrum
  • School of EEE
  • Nanyang Technological University
  • Department of Electrical and Electronic Engineering
  • Southern University of Science and Technology
  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Jusung Engineering Co., Ltd.
  • Si Nano Device Lab.
  • Agency for Science, Technology and Research, Singapore
  • Silicon Nano Device Laboratory

External person

M. B. Yu

  • Agency for Science, Technology and Research, Singapore

External person

S. J. Kim

  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Si Nano Device Lab.
  • Silicon Nano Device Lab.
  • Semiconductor Research and Development
  • Samsung

External person

Y. H. Wu

  • Department of Engineering and System Science
  • National Tsing Hua University
  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Dept. of Electronics Engineering

External person

T. J. Yen

  • National Yang Ming Chiao Tung University
  • Dept. of Electronics Engineering

External person

B. C. Lin

  • National Yang Ming Chiao Tung University
  • Northern Taiwan Institute of Science and Technology
  • Dept. of Electronics Engineering
  • Departmenty of Electronics Eng.
  • Institute of Electronics Engineering
  • Department of Electronics Eng.
  • Department of Elecronics Engineering
  • Department of Electrical Engineering
  • Department O Electronics Engineering
  • Northern Taiwan Institute of Science and Technology
  • Department of Electrical Engineering
  • Taipei City University of Science and Technology

External person

Y. T. Hou

  • Taiwan Semiconductor Manufacturing Company
  • Silicon Nano Device Lab.
  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Silicon Nano Devices Laboratory
  • Advanced Module Technology Division
  • Agency for Science, Technology and Research, Singapore
  • Silicon Nana Device Lab (SNDL)

External person

S. B. Chen

  • Department of Materials Science and Engineering
  • National Yang Ming Chiao Tung University
  • Department of Electrical Engineering
  • Department O Electronics Engineering
  • Department of Electronics Eng.
  • Department of Electrical Engineering
  • United Microelectronics Cooperation

External person

D. R. Islamov

  • Novosibirsk State University
  • RAS - Institute of Semiconductor Physics, Siberian Branch
  • RAS - Siberian Branch

External person

C. H. Lai

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Chung Hua University
  • Department of Electronics Engineering
  • Department of Electrical Engineering
  • Dep. of E. E.
  • CHU
  • Department of Microelectronics Engineering
  • Department of Electrical Engineering
  • Univ. System of Taiwan
  • Dept. of E.E.
  • Department of Electrical Engineering
  • Chung Chou University of Science and Technology
  • Department of Electrical Engineering
  • Department of Electronics Eng.
  • National University of Singapore
  • Silicon Nano Device Laboratory
  • United Microelectronics Cooperation
  • Dept. of EE

External person

W. J. Yoo

  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Jusung Engineering Co., Ltd.
  • Si Nano Device Lab.
  • Silicon Nano Device Laboratory

External person

Hang Hu

  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Si Nano Device Lab.
  • Silicon Nano Device Lab.

External person

Shiyang Zhu

  • Dept. of Microelectronics
  • Fudan University
  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Si Nano Device Lab.
  • Silicon Nano Device Laboratory
  • Agency for Science, Technology and Research, Singapore

External person

M. Y. Yang

  • Department of Materials Science and Engineering
  • National Yang Ming Chiao Tung University
  • Taiwan Semiconductor Manufacturing Company
  • Department of Electronics Eng.
  • Department O Electronics Engineering
  • Department of Electrical Engineering

External person

Cheng Wei Shih

  • Dept. of Electronics Engineering
  • National Yang Ming Chiao Tung University

External person

J. M. Ballingall

  • General Electric Co.
  • General Electric

External person

C. Shen

  • Silicon Nano Device Laboratory
  • National University of Singapore
  • Agency for Science, Technology and Research, Singapore
  • Jusung Engineering Co., Ltd.
  • Si Nano Device Lab.
  • Silicon Nano Devices Laboratory
  • Silicon Nano Device Laboratory
  • Silicon Nana Device Lab (SNDL)

External person

Chang Pin Chou

  • Department of Mechanical Engineering
  • National Yang Ming Chiao Tung University
  • Department of Mechanical Engineering

External person

N. C. Su

  • National Cheng Kung University
  • Department of Electrical Engineering
  • Inst. of Microelectronics
  • Institute of Microelectronics

External person

P. C. Chen

  • Department of Engineering and System Science
  • National Tsing Hua University
  • Department of Electronics Engineering
  • Chung Hua University
  • Department of Industrial Engineering and Management National
  • National Yang Ming Chiao Tung University
  • National Taiwan Normal University
  • Dept. of Mechatronic Engineering
  • Department of Materials Science and Engineering
  • Department of Electrical Engineering
  • Academia Sinica - Institute of Physics

External person

W. J. Lin

  • Institute of Nuclear Energy Research Taiwan
  • 1nst. of Nuclear Energy Research
  • National Yang Ming Chiao Tung University

External person

J. Liu

  • United Microelectronics Cooperation
  • United Microelectronics Corporation

External person

Szu Ling Liu

  • Department of Material Science and Engineering
  • National Yang Ming Chiao Tung University
  • Department of Electrical Engineering
  • Taiwan Semiconductor Manufacturing Company
  • Department of Electrical Engineering

External person

C. Tsai

  • National Yang Ming Chiao Tung University
  • Departmenty of Electronics Eng.
  • Institute of Electronics Engineering
  • Department of Electronics Eng.
  • Department of Elecronics Engineering
  • Dept. of Electronics Engineering

External person

Pallab Bhattacharya

  • Solid State Electronic Laboratory
  • University of Michigan, Ann Arbor
  • Department of Electrical Engineering and Computer Science
  • Center for High-Frequency Microelectronics
  • Solid-State Electronics Laboratory and Center for High Frequency Microelectronics
  • Solid State Electronics Laboratory
  • Center for Wireless Integrated Microsystems
  • Solid State Electronics Laboratory
  • Department of Electrical Engineering
  • Institute of Physics (U.K.)
  • IEEE
  • Optical Society of America
  • University of Michigan

External person

X. P. Wang

  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Agency for Science, Technology and Research, Singapore

External person

C. F. Lee

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Department of Electrical Engineering
  • Department of Electronics Eng.

External person

Hsiao Hsuan Hsu

  • Dept. of Materials Mineral Resources Engineering
  • National Taipei University of Technology
  • Industrial Technology Research Institute of Taiwan
  • Green Energy and Environment Research Laboratories
  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University
  • Department of Mechanical Engineering
  • Department of Electronics Engineering and Institute of Electronics
  • Dept. of Electronics Engineering
  • Department of Electrical Engineering
  • Gradute Institute of OET

External person

C. L. Sun

  • Department of Materials Science and Engineering
  • National Yang Ming Chiao Tung University
  • Chang Gung University
  • Department of Chemical and Materials Engineering
  • Department of Materials Science and Engineering
  • Portable Energy System Group
  • Department of Electronics Eng.
  • Academia Sinica - Institute of Atomic and Molecular Sciences
  • Center for Condensed Matter Sciences
  • National Taiwan University
  • Department of Neurosurgery
  • Chang Gung Memorial Hospital
  • Academia Sinica Taiwan

External person

H. J. Yang

  • E.E. Dept.
  • National Yang Ming Chiao Tung University
  • Department O Electronics Engineering
  • Department of Electrical Engineering
  • Department of Electrical Engineering

External person

C. Y. Lin

  • National Nano Device Laboratories Taiwan
  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University
  • Department of Electronics Eng.
  • Department of Electrical Engineering
  • Department O Electronics Engineering
  • Taiwan Semiconductor Manufacturing Company
  • Dept. of Electronics Engineering
  • Logic Technology Division
  • United Microelectronics Corporation

External person

S. J. Lee

  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Jusung Engineering Co., Ltd.
  • Si Nano Device Lab.
  • Silicon Nano Device Laboratory

External person

Kun I. Chou

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University
  • Department of Electrical Engineering

External person

J. C. Hsieh

  • United Microelectronics Cooperation
  • United Microelectronics Corporation

External person

J. H. Chen

  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Jusung Engineering Co., Ltd.
  • Si Nano Device Lab.
  • Silicon Nano Device Laboratory

External person

G. S. Samudra

  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Agency for Science, Technology and Research, Singapore

External person

X. P. Wang

  • Silicon Nano Device Laboratory
  • National University of Singapore
  • Agency for Science, Technology and Research, Singapore
  • Silicon Nano Device Lab.

External person

I. J. Hsieh

  • Department of Electric Engineering
  • Chung Hua University
  • Department of Electrical Engineering
  • Department of Electronics Engineering
  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University

External person

You Da Chen

  • Dept. of Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Institute of Electronics Engineering

External person

H. C. Pan

  • National Applied Research Laboratories Taiwan

External person

Shi Jin Ding

  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Agency for Science, Technology and Research, Singapore
  • Si Nano Device Lab.
  • Fudan University
  • Dept. of Microelectronics

External person

C. N. Hsiao

  • National Applied Research Laboratories Taiwan
  • Department of Materials Science and Engineering
  • National Yang Ming Chiao Tung University
  • Instrument Technology Research Center
  • National Science Council Taiwan
  • Prec. Instrument Development Center
  • Precision Instrument Development Center
  • Vacuum Technology Division
  • Taiwan Semiconductor Research Institute
  • Taiwan Semiconductor Research Institute

External person

T. Chang

  • Chung-shan Institute of Science and Technology Taiwan
  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Department of Electrical Engineering

External person

D. S. Duh

  • Institute of Nuclear Energy Research Taiwan

External person

A. A. Gismatulin

  • RAS - Institute of Semiconductor Physics, Siberian Branch
  • Novosibirsk State University
  • Rzhanov Inst Semicond Phys SB RAS, Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

External person

Huey Liang Hwang

  • Department of Electrical Engineering
  • IEEE
  • National Tsing Hua University
  • Department of Electrical Engineering
  • Department of Electrical Engineering
  • Department of Electronics Engineering and Institute of Electronics Engineering

External person

Jingde Chen

  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Si Nano Device Lab.
  • Silicon Nano Device Laboratory

External person

Jagar Singh

  • Agency for Science, Technology and Research, Singapore
  • Fudan University
  • Dept. of Microelectronics
  • National University of Singapore
  • Silicon Nano Device Laboratory

External person

T. V. Perevalov

  • Novosibirsk State University
  • RAS - Institute of Semiconductor Physics, Siberian Branch
  • RAS - Siberian Branch

External person

C. H. Tung

  • Agency for Science, Technology and Research, Singapore
  • Taiwan Semiconductor Manufacturing Company
  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Fudan University
  • University of Texas at Austin
  • Hong Kong University of Science and Technology
  • National Yang Ming Chiao Tung University

External person

C. H. Lai

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University
  • Department of Electronics Eng.
  • Department O Electronics Engineering

External person

Wei Yip Loh

  • Agency for Science, Technology and Research, Singapore
  • SEMATECH

External person

M. F. Chang

  • National Yang Ming Chiao Tung University
  • Department of Photonic
  • Department of Photonics
  • Department of Photonics

External person

P. A. Martin

  • General Electric Co.
  • General Electric

External person

G. Q. Lo

  • Agency for Science, Technology and Research, Singapore

External person

Y. P. Feng

  • Dept. Physics
  • National University of Singapore
  • Dept. Physics
  • Department of Physics

External person

S. Biesemans

  • Interuniversitair Micro-Elektronica Centrum

External person

Tony Low

  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Agency for Science, Technology and Research, Singapore
  • Silicon Nano Device Lab.
  • Silicon Nano Device Lab (SNDL)
  • Technology Development
  • Silicon Nano Devices Laboratory
  • Silicon Nana Device Lab (SNDL)

External person

K. Y. Hsieh

  • National Sun Yat-sen University
  • Institute of Materials Science and Engineering
  • Department of Material Engineering
  • National Yang Ming Chiao Tung University

External person

Wei Fang Su

  • Department of Materials Science and Engineering
  • National Taiwan University
  • Institute of Polymer Science and Engineering
  • Department of Materials Science and Engineering

External person

Y. Jin

  • Advanced Module Technology Division
  • Taiwan Semiconductor Manufacturing Company
  • Research and Development

External person

C. C. Wu

  • Dept. of Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Department of Electronics Eng.
  • Department O Electronics Engineering
  • Institute of Electronics

External person

V. N. Kruchinin

  • RAS - Institute of Semiconductor Physics, Siberian Branch

External person

C. Ren

  • Silicon Nano Device Laboratory
  • National University of Singapore
  • Agency for Science, Technology and Research, Singapore

External person

S. J. Whang

  • Silicon Nano Device Lab.
  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Jusung Engineering Co., Ltd.
  • Si Nano Device Lab.

External person

M. S. Liang

  • Advanced Module Technology Division
  • Taiwan Semiconductor Manufacturing Company
  • Research and Development
  • Taiwan Semiconductor Manufacturing Corporaton
  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • University of California at Berkeley
  • Department of Electrical Engineering and Computer Science
  • Hsinchu Science Park
  • Department of Electrical Engineering and Computer Science
  • Dept. of Elec. Eng. Computer Science
  • Department of Electrical Engineering
  • Advanced Module Technology Division
  • IEEE
  • Research and Development Organization
  • Department of Electrical Engineering and Computer Sciences
  • Taiwan Semi-conduc. Mfg. Co. Ltd.
  • SBIP

External person

Ting Kuo Chang

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Department of Electrical Engineering
  • Institute of Electronics
  • Institute of Electronics
  • Institute of Electronics Engineering
  • Institute of Electronics
  • Innolux Corporation
  • Department of Electronics Eng.

External person

X. Y. Liu

  • Institute of Microelectronics
  • Peking University
  • Institute of Microelectronics
  • Key Laboratory of Microelectronic Devices and Circuits
  • Institute of Microelectronics

External person

Kuei Shu Chang-Liao

  • Department of Engineering and System Science
  • National Tsing Hua University

External person

H. J. Tao

  • Taiwan Semiconductor Manufacturing Company
  • Research and Development
  • Advanced Module Technology Division

External person

Nan Wu

  • Silicon Nano Device Lab.
  • National University of Singapore
  • Silicon Nano Device Laboratory

External person

Andy Lim

  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Agency for Science, Technology and Research, Singapore

External person

S. C. Chen

  • Advanced Module Technology Division
  • Taiwan Semiconductor Manufacturing Company
  • Department of Electronic Engineering
  • National Yunlin University of Science and Technology
  • Institute of Electronics
  • National Yang Ming Chiao Tung University
  • Institute of Electronics
  • Department of Electronics Engineering
  • Institute of Electronics
  • IEEE
  • Department of Electronics Engineering and Institute of Electronics
  • SBIP

External person

P. D. Foo

  • Agency for Science, Technology and Research, Singapore
  • Institute of Microclcctromcs

External person

J. F. Kang

  • Institute of Microelectronics
  • Peking University
  • Institute of Microelectronics
  • Institute of Microelectronics
  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Key Laboratory of Microelectronic Devices and Circuits

External person

Qingchun Zhang

  • Silicon Nano Device Lab.
  • National University of Singapore
  • Silicon Nano Device Laboratory

External person

S. C. Chien

  • United Microelectronics Corporation (UMC)
  • United Microelectronics Corporation
  • United Microelectronics Coperation
  • Central Research and Development Division
  • Department of Electronics Eng.
  • National Yang Ming Chiao Tung University
  • Technology Development Division
  • United Microelectronics Cooperation
  • Technology and Process Development Division

External person

John Mazurowski

  • General Electric
  • General Electric Co.

External person

Zhi Wei Zheng

  • Chinese Academy of Sciences
  • CAS - Institute of Microelectronics
  • Xiamen University
  • Department of Electronic Engineering

External person

Ming Chu King

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Department of Electrical Engineering
  • Taiwan Semiconductor Manufacturing Company

External person

N. Balasubramanian

  • Agency for Science, Technology and Research, Singapore
  • Institute of Microelectronics

External person

Ming Liu

  • Chinese Academy of Sciences
  • CAS - Institute of Microelectronics
  • Key Laboratory of Microelectronic Devices and Integrated Technology
  • Key Laboratory of Microelectronics Devices and Integrated Technology
  • Chinese Academy of Sciences
  • Fudan University

External person

Chun Fu Lu

  • Department of Materials Science and Engineering
  • National Taiwan University
  • Department of Materials Science and Engineering

External person

M. Weiner

  • United States Army
  • U.S. Army LABCOM
  • ETD Laboratory
  • ETD Laboratory
  • U.S. Army LABCOM
  • EDT Laboratory, U.S. Army LABCOM

External person

Shih Han Yi

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University
  • Department of Engineering and System Science
  • National Tsing Hua University
  • Dept. of Electronics Engineering

External person

Subhash C. Rustagi

  • Agency for Science, Technology and Research, Singapore

External person

J. H. Zhao

  • Electrical and Computer Engineering Department
  • Rutgers - The State University of New Jersey, New Brunswick
  • Rutgers University

External person

F. Y. Yen

  • Taiwan Semiconductor Manufacturing Company

External person

Victor Liang

  • United Microelectronics Corporation
  • United Microelectronics Coperation
  • United Microelectronics Cooperation

External person

Rui Li

  • National University of Singapore
  • Silicon Nano Device Laboratory

External person

J. M. Lai

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Department of Electronics Eng.
  • Department of Electrical Engineering

External person

Hong Y I Lin

  • Department of Electronics Eng.
  • National Yang Ming Chiao Tung University
  • Dept. of Electronics Engineering
  • Department O Electronics Engineering

External person

Vladimir Sh Aliev

  • RAS - Institute of Semiconductor Physics, Siberian Branch

External person

C. H. Tung

  • Agency for Science, Technology and Research, Singapore
  • Dept of EEE
  • National University of Singapore
  • University of Texas at Austin
  • Hong Kong University of Science and Technology
  • Department of Electrical and Computer Engineering
  • Silicon Nano Device Laboratory
  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University
  • Fudan University
  • Dept. of Microelectronics
  • Institute of Microclcctromcs
  • Silicon Nano Device Laboratory

External person

Meshon Jiang

  • Department of Computer and Communications Engineering
  • Ta-Hwa Institute of Technology Taiwan
  • Institute of Communication Studies
  • National Yang Ming Chiao Tung University

External person

Chang Ho Tseng

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Institute of Electronics
  • Institute of Electronics
  • Institute of Electronics
  • Department of Electrical Engineering

External person

V. A. Volodin

  • Novosibirsk State University
  • RAS - Institute of Semiconductor Physics, Siberian Branch

External person

T. Burke

  • Rutgers - The State University of New Jersey, New Brunswick
  • Electrical and Computer Engineering Department
  • Rutgers University

External person

Y. H. Wu

  • Department of Engineering and System Science
  • National Tsing Hua University

External person

Patrick Lo

  • Agency for Science, Technology and Research, Singapore

External person

Bo Shiuan Shie

  • Department of Electronics Engineering and Institute of Electronics
  • National Yang Ming Chiao Tung University
  • Department of Electrical Engineering
  • Department of Electrical Engineering
  • Dept. of Electronics Engineering

External person

Hui Wen Yuan

  • Fudan University
  • Dept. of Microelectronics

External person

Yu-Xin Zhang

  • Natl Chiao Tung Univ, National Chiao Tung University, Coll Elect & Comp Engn, Inst Electroopt Engn

External person

Jun Jie Li

  • Fudan University
  • Dept. of Microelectronics

External person

Daming Huang

  • Fudan University
  • Dept. of Microelectronics

External person

T. S. Duh

  • Institute of Nuclear Energy Research Taiwan
  • 1nst. of Nuclear Energy Research
  • Advanced Research and Business Lab.

External person

K. C. Hsu

  • Department of Physics
  • National Tsing Hua University

External person

Ni Xu

  • Natl Cent Univ, National Central University, Dept Business Adm

External person

Yifang Chen

  • Rutherford Appleton Laboratory
  • Fudan University
  • Dept. of Microelectronics

External person

Y. J. Chen

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University

External person

Yi Ming Chen

  • Industrial Technology Research Institute of Taiwan
  • Opto-electronics and Systems Laboratories
  • Natl Chiao Tung Univ, National Chiao Tung University, Coll Elect & Comp Engn, Inst Electroopt Engn

External person

Johnny K.O. Sin

  • Dept of EEE
  • National University of Singapore
  • University of Texas at Austin
  • Hong Kong University of Science and Technology
  • Department of Electrical and Computer Engineering
  • Silicon Nano Device Laboratory
  • Department of Electrical Engineering
  • Agency for Science, Technology and Research, Singapore
  • National Yang Ming Chiao Tung University
  • Dept. of Elec. and Electron. Eng.

External person

P. F. Wang

  • Fudan University
  • Dept. of Microelectronics

External person

K. H. Shih

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Dept. of Electronics Engineering
  • Department of Electronics Eng.

External person

James G. Mihaychuk

  • Institute for Microstructural Sciences
  • National Research Council of Canada
  • Institute for Microstructural Sciences
  • Inst. for Microstructural Sciences

External person

S. D. Hersee

  • General Electric Co.
  • General Electric

External person

Jinhai Shao

  • Fudan University
  • Dept. of Microelectronics

External person

Yu N. Novikov

  • RAS - Institute of Semiconductor Physics, Siberian Branch

External person

J. Kwo

  • Department of Physics
  • National Tsing Hua University
  • Department of Physics
  • National Taiwan University

External person

Utpal Das

  • Department of Electrical Engineering
  • University of Florida
  • Solid-State Electronics Laboratory and Center for High Frequency Microelectronics
  • University of Michigan, Ann Arbor
  • University of Florida

External person

Y. H. Lin

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Department of Electronics Engineering and Institute of Electronics

External person

T. H. Yu

  • General Electric
  • General Electric Co.

External person

Zhu Chunxiang

  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Dept of EEE
  • University of Texas at Austin
  • Hong Kong University of Science and Technology
  • Department of Electrical and Computer Engineering
  • Department of Electrical Engineering
  • Agency for Science, Technology and Research, Singapore
  • National Yang Ming Chiao Tung University

External person

D. Larson

  • Electrical and Computer Engineering Department
  • Rutgers - The State University of New Jersey, New Brunswick
  • Rutgers University

External person

T. H. Lee

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University

External person

Pheiroijam Pooja

  • National Yang Ming Chiao Tung University

External person

Hui Shen

  • Fudan University
  • Dept. of Microelectronics

External person

Mike W. Denhoff

  • Institute for Microstructural Sciences
  • National Research Council of Canada
  • Institute for Microstructural Sciences
  • Inst. for Microstructural Sciences

External person

B. H. Liou

  • Instrumentation and Technical Research Center
  • National Applied Research Laboratories Taiwan

External person

Chien-Hung Wu

  • National Yang Ming Chiao Tung University
  • Chung Hua Univ, Chung Hua University, Dept Optoelect & Mat Engn
  • Chung Hua Univ, Chung Hua University, Dept Elect Engn

External person

W. Ross McKinnon

  • Institute for Microstructural Sciences
  • National Research Council of Canada
  • Institute for Microstructural Sciences
  • Inst. for Microstructural Sciences

External person

I. P. Prosvirin

  • RAS - Boreskov Institute of Catalysis, Siberian Branch

External person

Minghwei Hong

  • Department of Materials Science and Engineering
  • National Tsing Hua University
  • Dept. of Material Science Eng.

External person

Ming Wen Ma

  • Nanya Technology Corporation
  • National Yang Ming Chiao Tung University
  • Hwa-Ya Technology Park
  • Department of Electrical Engineering
  • Department of Electrical Engineering
  • National Sun Yat-sen University
  • Department of Electronics Engineering and Institute of Electronics
  • Institute of Electronics
  • Taiwan Semiconductor Manufacturing Company
  • Research and Development
  • Department O Electronics Engineering
  • Institute of Electronics
  • Department of Electronics Eng.
  • Institute of Electronics
  • Institute and Department of Electrophysics
  • Department of Electrophysics
  • Taiwan Semiconductor Research Institute
  • National Cheng Kung University

External person

Z. M. Lai

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University
  • Department O Electronics Engineering
  • Dept. of Electronics Engineering

External person

T. M. Cheng

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Institute of Electronics

External person

W. D. Wang

  • Agency for Science, Technology and Research, Singapore

External person

J. K. Chen

  • United Microelectronics Corporation
  • Technology Development Division
  • United Microelectronics Cooperation
  • Technology and Process Development Division

External person

C. Y. Chen

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University
  • Department O Electronics Engineering
  • Department of Electronics Eng.
  • Jiangsu Hecheng Display Technology Co., Ltd

External person

Hong Wang

  • School of Electrical and Electronic Engineering
  • Nanyang Technological University
  • School of Electrical and Electronic Engineering
  • School of Electrical and Electronic Engineering
  • School of Electrical and Electronic Engineering

External person

C. K. Deng

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University
  • Institute of Electronics
  • Institute of Electronics
  • Institute of Electronics
  • IEEE

External person

J. C.M. Huang

  • Industrial Technology Research Institute of Taiwan
  • National Yang Ming Chiao Tung University

External person

Jen Tsai Kuo

  • Institute of Communication Studies
  • National Yang Ming Chiao Tung University
  • Department of Communication Engineering
  • Chang Gung University
  • Department of Electronics Engineering

External person

H. F. Lim

  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Si Nano Device Lab.

External person

Yiyang Sun

  • Dept. Physics
  • National University of Singapore
  • Dept. Physics

External person

Y. Y. Tseng

  • Department of Electronics Eng.
  • National Yang Ming Chiao Tung University
  • Department of Electrical Engineering
  • Dept. of Electronics Eng.
  • Univ. System of Taiwan

External person

J. W. Lin

  • Department of Electronics Engineering
  • Chung Hua University
  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Department of Electric Engineering
  • Department of Electrical Engineering

External person

C. Y. Chang

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Institute of Electronics
  • Institute of Electronics
  • National Academy of Sciences
  • Academia Sinica Taiwan
  • National Cheng Kung University
  • Department of Electrical Engineering
  • Department of Electronics Engineering and Institute of Electronics
  • Institute of Electronics
  • Dept. of Electronics Engineering
  • Department of Management Science
  • Department of Electrical Engineering
  • Microelectronics and Information Systems Research Center
  • Department of Electronics Eng.
  • National Nano Device Laboratories Taiwan
  • Institute of Electronics Engineering
  • Department of Electrophysics
  • Academia Sinica - Research Center for Applied Science
  • Electronics Engineering
  • IEEE
  • Yuan Ze University
  • Department of Electrical Engineering
  • Department of Photonics
  • National Sun Yat-sen University
  • Department of Physics
  • Department of Materials Science and Engineering
  • Institute of Materials Science and Engineering
  • Department of Electronics
  • Dept. of Electronicss Engineering
  • Department of Materials Science and Engineering
  • Department of Photonics
  • Institute of Electronics

External person

T. C. Ku

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University
  • Dept. of Electronics Engineering

External person

G. N. Kamaev

  • Novosibirsk State University
  • RAS - Institute of Semiconductor Physics, Siberian Branch

External person

Chieh Hsiung Kuan

  • Inst. of Electro-Optical Engineering
  • National Taiwan University
  • Department of Electrical Engineering
  • Department of Electrical Engineering
  • Electrical Engineering Department
  • Princeton University
  • Dept. of Electr. Eng.
  • Graduate Institute of Photonics and Optoelectronics
  • Institute of Photonics and Optoelectronics

External person

Doan My

  • Agency for Science, Technology and Research, Singapore
  • Institute of Microclcctromcs

External person

M. F. Huang

  • Institute of Electronics
  • National Yang Ming Chiao Tung University

External person

L. Chan

  • Technology Development
  • Chartered Semiconductor Manufacturing Ltd.
  • Technology Development. Chartered Semiconductor Manufacturing

External person

Y. Z. Xiong

  • Agency for Science, Technology and Research, Singapore

External person

Jean Lapointe

  • Institute for Microstructural Sciences
  • National Research Council of Canada
  • Institute for Microstructural Sciences

External person

Y. H. Wu

  • National Yang Ming Chiao Tung University
  • Department of Materials Science and Engineering
  • Department of Material Science and Engineering
  • Department of Engineering and System Science
  • National Tsing Hua University

External person

S. T. Ng

  • School of EEE
  • Nanyang Technological University

External person

C. C. Laio

  • Department of Electronics Eng.
  • National Yang Ming Chiao Tung University
  • Department of Electrical Engineering

External person

W. J. Fan

  • School of EEE
  • Nanyang Technological University

External person

K. H. Chang

  • Department of Engineering and System Science
  • National Tsing Hua University
  • National Applied Research Laboratories Taiwan

External person

Hau Yuan Huang

  • National Cheng Kung University
  • Department of Electrical Engineering
  • Institute of Microelectronics

External person

C. P. Liao

  • Industrial Technology Research Institute of Taiwan
  • National Yang Ming Chiao Tung University
  • Advanced Research and Business Lab.
  • Adv. Res. and Business Laboratory
  • Grad. Inst. Electro-Optical Mat. S.
  • National Formosa University

External person

Ç Kurdak

  • Princeton University
  • Dept. of Electr. Eng.
  • Department of Electrical Engineering

External person

Jun Shao

  • CAS - Shanghai Institute of Technical Physics

External person

T. L. Wu

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University

External person

M. Hwang

  • Tokyo Electron Limited

External person

Y. F. Yong

  • National University of Singapore
  • Silicon Nano Device Laboratory

External person

Akira Nishiyama

  • Toshiba Corporation

External person

L. K. Bera

  • Agency for Science, Technology and Research, Singapore
  • Dept of EEE
  • National University of Singapore
  • University of Texas at Austin
  • Hong Kong University of Science and Technology
  • Department of Electrical and Computer Engineering
  • Silicon Nano Device Laboratory
  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University

External person

You Lin Wu

  • National Chi Nan University
  • Department of Electrical Engineering

External person

Hwang Wan Sik

  • National University of Singapore
  • Silicon Nano Device Laboratory

External person

S. C. Chang

  • Department of Engineering and System Science
  • National Tsing Hua University

External person

Chen Shen

  • Silicon Nano Device Lab.
  • National University of Singapore
  • Silicon Nano Devices Laboratory
  • Silicon Nano Device Laboratory
  • Silicon Nana Device Lab (SNDL)
  • Silicon Nano Device Laboratory
  • Jusung Engineering Co., Ltd.

External person

S. L. Chang

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University

External person

T. Arikado

  • Tokyo Electron Limited
  • Selete

External person

Paul R. Berger

  • Ohio State University

External person

Harish M. Kittur

  • School of Electronics Engineering
  • Vellore Institute of Technology
  • School of Electronics Engineering

External person

C. Tseng

  • United Microelectronics Corporation
  • United Microelectronics Cooperation

External person

H. F. Chiu

  • Department of Materials Science and Engineering
  • National Tsing Hua University
  • Department of Material Engineering

External person

Song-Nian Kuo

  • Natl Chiao Tung Univ, National Chiao Tung University, Coll Elect & Comp Engn, Inst Electroopt Engn

External person

A. Ourmazd

  • Lucent
  • Nokia

External person

W. Lu

  • CAS - Shanghai Institute of Technical Physics

External person

Li Ming Chang

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University

External person

Yu Bo Wang

  • Institute of Electromagnetics and School of Electronic Engineering
  • University of Electronic Science and Technology of China
  • School of Electronic Science and Engineering

External person

Tan Hua Yu

  • General Electric

External person

J. R. Chen

  • Department of Materials Science and Engineering
  • National Tsing Hua University
  • Department of Materials Science and Engineering
  • Department of Materials Science and Engineering
  • Department of Materials Science and Engineering
  • Department of Materials Science and Engineering
  • Department of Material Engineering

External person

Chun Chang Lu

  • Department of Engineering and System Science
  • National Tsing Hua University

External person

R. H. Kao

  • Institute of Electronics Engineering
  • National Yang Ming Chiao Tung University

External person

T. J. Wang

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Department of Electric Engineering
  • Chung Hua University

External person

K. Y. Chou

  • Department of Electronics Engineering and Institute of Electronics
  • National Yang Ming Chiao Tung University
  • Department of Electrical Engineering

External person

Shangjr Gwo

  • Department of Physics
  • National Tsing Hua University
  • Department of Physics
  • National Synchrotron Radiation Research Center Taiwan
  • Department of Photonics
  • National Yang Ming Chiao Tung University
  • Institute of Nanoengineering and Microsystems
  • Institute of NanoEngineering and MicroSystems
  • Academia Sinica - Research Center for Applied Science

External person

C. W. Wang

  • Department of Engineering and System Science
  • National Tsing Hua University

External person

F. C. Chiu

  • Department of Electronic Engineering
  • Ming Chuan University
  • Winbond Electronics Corporation
  • Technology Development Division
  • Department of Electronics Engineering
  • Department of Logic Device

External person

Ren Chi

  • National University of Singapore
  • Silicon Nano Device Laboratory

External person

C. M. Kwei

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • National Applied Research Laboratories Taiwan
  • Department of Electrical Engineering
  • Department of Electrical Engineering
  • Dept. of Electronics Engineering

External person

Chin Chuan Huang

  • Institute of Microelectronics
  • National Cheng Kung University
  • Inst. of Electro-Optical Engineering
  • National Yang Ming Chiao Tung University
  • Department of Photonics
  • New Display Process Research Division
  • AU Optronics Taiwan
  • Institute of Electronics
  • National Tsing Hua University
  • National Sun Yat-sen University
  • Department of Physics
  • Department of Electrical Engineering
  • Department of Electronics Eng.
  • Institute of Microelectronics and Department of Electrical Engineering
  • Intgd. Circt. and Systems Laboratory

External person

K. Y. Jhou

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University
  • Department O Electronics Engineering

External person

X. C. Shen

  • CAS - Shanghai Institute of Technical Physics

External person

S. C. Pai

  • Department of Physics
  • National Tsing Hua University
  • National Yang Ming Chiao Tung University
  • Department of Physics

External person

M. B. Yu

  • Institute of Microclcctromcs
  • Agency for Science, Technology and Research, Singapore

External person

Wu Nan

  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Dept of EEE
  • University of Texas at Austin
  • Hong Kong University of Science and Technology
  • Department of Electrical and Computer Engineering
  • Department of Electrical Engineering
  • Agency for Science, Technology and Research, Singapore
  • National Yang Ming Chiao Tung University

External person

J. J. Yang

  • National University of Singapore
  • Silicon Nano Device Laboratory

External person

Shi Jin Ding

  • Fudan University
  • State Key Laboratory of ASIC and Systems
  • Dept. of Microelectronics

External person

C. S. Liang

  • Department of Electronics Eng.
  • National Yang Ming Chiao Tung University

External person

Keh Chyang Leou

  • Department of Engineering and System Science
  • National Tsing Hua University

External person

Yun Chang

  • Taiwan Semiconductor Manufacturing Company

External person

E. M. Monberg

  • Lucent
  • Nokia

External person

Shi Tin Lin

  • National Chi Nan University
  • Department of Electrical Engineering

External person

Yu Han Chen

  • Institute of Microelectronics
  • National Cheng Kung University

External person

C. H. Liu

  • Department of Electronic Engineering
  • Ming Chuan University
  • Department of Electronics Engineering
  • National Taiwan Normal University
  • Department of Mechatronic Technology
  • Department of Electronics Engineering
  • Dept. of Electronics Engineering
  • National Yang Ming Chiao Tung University

External person

Zhang Qingchun

  • National University of Singapore
  • Silicon Nano Device Laboratory
  • Dept of EEE
  • University of Texas at Austin
  • Hong Kong University of Science and Technology
  • Department of Electrical and Computer Engineering
  • Department of Electrical Engineering
  • Agency for Science, Technology and Research, Singapore
  • National Yang Ming Chiao Tung University

External person

C. H. Tsai

  • Department of Engineering and System Science
  • National Tsing Hua University
  • Industrial Technology Research Institute of Taiwan
  • Electronics Res. and Serv. Org.
  • Department of Nuclear Engineering
  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University

External person

H. Y. Lee

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University

External person

Chang Cheng Yang

  • National Chi Nan University
  • Department of Electrical Engineering

External person

Wu-Yang Liu

  • Natl Chiao Tung Univ, National Chiao Tung University, Coll Elect & Comp Engn, Inst Electroopt Engn

External person

Jia-Min Shieh

謝嘉民

  • National Applied Research Laboratories Taiwan
  • Inst. of Electro-Optical Engineering
  • National Yang Ming Chiao Tung University
  • Department of Photonics
  • Department of Photonics and Institute of Electro-Optical Engineering
  • National Nano Devices Laboratories
  • National Device Laboratory(NDL)
  • National Nano Device Laboratories Taiwan
  • Inst. of Electro-Optic Engineering
  • Department of Photonics
  • Department of Photonics
  • Department of Photonics
  • Department of Photonics
  • Hsinchu
  • Department of Photonics
  • Department of Photonics
  • Department of Photonic
  • Taiwan Semiconductor Research Institute
  • Department of Photonics
  • Department of Photonics
  • National Cheng Kung University
  • Department of Electrical Engineering
  • Taiwan Semicond Res Inst
  • Taiwan Semiconductor Research Institute
  • Taiwan Semiconductor Research Institute
  • Taiwan Semiconductor Research Institute (TSRI)
  • Taiwan Semiconductor Manufacture Co.
  • Stanford University
  • Taiwan Semiconductor Research Institute
  • Taiwan Semiconductor Research Institute

External person

Jia Qi Liu

  • Institute of Electromagnetics and School of Electronic Engineering
  • Advanced Engineering Platform and School of Electronic Engineering
  • Advanced Engineering Platform and School of Electronic Engineering
  • Monash University
  • University of Electronic Science and Technology of China
  • School of Electronic Science and Engineering
  • Monash University Malaysia

External person

G. L. Gu

  • National Sun Yat-sen University
  • Institute of Materials Science and Engineering

External person

K. Y. Horng

  • Chung-shan Institute of Science and Technology Taiwan

External person

J. Hu

  • Tokyo Electron Limited

External person

H. H. Ma

  • Silicon Nano Device Laboratory
  • National University of Singapore

External person

J. H. Huang

  • Materials Science Center
  • National Tsing Hua University
  • Department of Materials Science and Engineering
  • Department of Materials Science and Engineering
  • Department of Materials Science and Engineering
  • Department of Material Science and Engineering
  • National Yang Ming Chiao Tung University
  • Department of Materials Science and Engineering

External person

Meikei Ieong

  • Taiwan Semiconductor Manufacturing Company
  • Hong Kong Applied Science and Technology Research Institute
  • IBM
  • ASTRI
  • University of California at Berkeley
  • Department of Electrical Engineering and Computer Science

External person

M. T. Yang

  • Taiwan Semiconductor Manufacturing Company

External person

Chen Kuo Chiang

  • Institute of Microelectronics
  • National Cheng Kung University
  • Chang Gung University

External person

Ching Wei Lin

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Institute of Electronics
  • Adv. Technol. Research Center
  • Innolux Corporation
  • Industrial Technology Research Institute of Taiwan
  • Electronics Res. and Serv. Org.
  • Institute of Electronics
  • Institute of Electronics

External person

Jiang Ning

  • Agency for Science, Technology and Research, Singapore

External person

B. Chen

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University
  • Dept. of Electronics Engineering

External person

Ying Qian Wang

  • National University of Singapore
  • Silicon Nano Device Laboratory

External person

Y. C. Chen

  • Department of Electric Engineering
  • Chung Hua University

External person

Joshua Le Wei Li

  • Institute of Electromagnetics and School of Electronic Engineering
  • Advanced Engineering Platform and School of Electronic Engineering
  • Advanced Engineering Platform and School of Electronic Engineering
  • Monash University
  • University of Electronic Science and Technology of China
  • School of Electronic Science and Engineering
  • Monash University Malaysia

External person

Kuan Han Chen

  • Orise Technology Cooperation
  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University

External person

A. M. Chang

  • Lucent
  • Nokia

External person

Alastair Trigg

  • Agency for Science, Technology and Research, Singapore

External person

Jagadeesh Pamulapati

  • Center for High-Frequency Microelectronics
  • University of Michigan, Ann Arbor
  • Electronics and Power Sources Directorate
  • United States Army Research Laboratory
  • Rutgers - The State University of New Jersey, New Brunswick
  • U.S. Army ETDL
  • Rutgers University

External person

H. Y. Li

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University

External person

Chun-Hu Cheng

  • National Taiwan Normal University
  • Natl Taiwan Normal Univ, National Taiwan Normal University, Dept Mechatron Engn

External person

Yu Yang

  • National Yang Ming Chiao Tung University

External person

Vladimir N. Kruchinin

  • RAS, Russian Academy of Sciences, Omsk Scientific Centre of the Siberian Branch of the Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, SB, Rzhanov Inst Semicond Phys
  • Russian Acad Sci, Russian Academy of Sciences, Omsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Rzhanov Inst Semicond Phys, Siberian Branch

External person

P. Wu

  • Department of Electronics Eng.
  • National Yang Ming Chiao Tung University

External person

J. H. Chou

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University

External person

Yu Chieh Lee

  • National Yang Ming Chiao Tung University

External person

Chen Wei Shih

  • Dept. of Electronics Engineering
  • National Yang Ming Chiao Tung University

External person

Jerry Winkler

  • Aixtron SE

External person

Yiu C. Cheng

  • Department of Electrical Engineering and Computer Sciences
  • The University of Hong Kong
  • City University of Hong Kong
  • University of California at Berkeley
  • Department of Electrical Engineering
  • Univ of California, Dep of
  • Department of Electrical Engineering
  • Directorate
  • Department of Electrical Engineering and Computer Science
  • National Yang Ming Chiao Tung University

External person

Lurng Shehng Lee

  • Industrial Technology Research Institute of Taiwan
  • Electronics and Opto-electronics Research Laboratories
  • Electronics Res. and Serv. Org.
  • Taiwan Semiconductor Manufacturing Company

External person

F. F. Zhang

  • Institute of Microelectronics
  • Peking University

External person

Renuka P. Jindal

  • University of Louisiana at Lafayette

External person

Kwang S. Seo

  • Department of Electrical Engineering and Computer Science
  • University of Michigan, Ann Arbor

External person

F. C. Wei

  • Dept. of Electronics Engineering
  • National Yang Ming Chiao Tung University

External person

I. V. Korolkov

  • Laboratory of Crystal Chemistry
  • Novosibirsk State University
  • RAS - Nikolaev Institute of Inorganic Chemistry, Siberian Branch

External person

E. Liu

  • Center For Nanotechnology, Material Science, and Microsystem
  • National Tsing Hua University

External person

Yu Chien Chiu

  • Department of Electronics Engineering and Institute of Electronics
  • National Yang Ming Chiao Tung University
  • Dept. of Electronics Engineering
  • Department of Electrical Engineering

External person

G. L. Chen

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University

External person

V. V. Kaichev

  • RAS - Boreskov Institute of Catalysis, Siberian Branch

External person

W. P. Hong

  • Center for Wireless Integrated Microsystems
  • University of Michigan, Ann Arbor

External person

Kun Yu Lee

  • Department of Materials Science and Engineering
  • National Tsing Hua University

External person

W. L. Huang

  • Department of Electric Engineering
  • Chung Hua University

External person

Vladimir A. Pustovarov

  • Ural Federal University

External person

Sheng Fu Horng

  • Institute of Electronic Engineering
  • National Tsing Hua University
  • Department of Electrical Engineering
  • Department of Electrical Engineering
  • Institute of Photonics Technologies
  • Department of Electrical Engineering
  • Department of Electronics Engineering and Institute of Electronics Engineering
  • Dept. of Electr. Eng.
  • Department of Electrical Engineering
  • Department of Electrical Engineering
  • Natl Tsing Hua Univ, National Tsing Hua University, Inst Commun Engn, Dept Elect Engn

External person

Oleg M. Orlov

  • Molecular Electronics Research Institute
  • Moscow Institute of Physics and Technology

External person

Yi Hong Wu

  • Department of Electrophysics
  • National Yang Ming Chiao Tung University
  • Department of Electrophysics
  • Feng Chia University
  • Department of Electronic Engineering
  • Department of Electrophysics
  • Department of Electrophysics
  • Department of Electrophysics
  • Department of Electrophysics

External person

Chung Chin Lu

  • Department of Electrical Engineering
  • National Tsing Hua University
  • Dept. of Electr. Eng.
  • Department of Electrical Engineering
  • Department of Electrical Engineering
  • Department of Engineering and System Science
  • Department of Electrical Engineering
  • IEEE

External person

K. M. Chen

  • National Nano Device Laboratories Taiwan
  • University of California at Berkeley
  • Dept. of Elec. Eng. and Comp. Sci.
  • NARLabs
  • Department of Electrical Engineering and Computer Science
  • Advanced Logic and SRAM (ALS)
  • IBM
  • IEEE
  • Department of Electrical Engineering and Computer Sciences
  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Department of Electrical Engineering and Computer Sciences
  • Department of Electrical Engineering and Computer Science
  • Electrical Engineering Dept.
  • Department of EECS
  • Intel
  • Taiwan Semiconductor Research Institute
  • Taiwan Semiconductor Research Institute
  • National Nano Laboratories
  • Taiwan Semiconductor Research Institute
  • National Taipei University of Technology
  • Taiwan Semiconductor Research Institute
  • Taiwan Semiconductor Research Institute
  • Taiwan Semiconductor Research Institute (TSRI)
  • Taiwan Semiconductor Research Institute
  • National Cheng Kung University

External person

Chen Chan Wang

  • Department of Materials Science and Engineering
  • National Tsing Hua University

External person

C. F. Chang

  • Taiwan Semiconductor Manufacturing Company
  • The Electrochemical Society

External person

A. P. Baraban

  • St. Petersburg State University

External person

S. N. Kuo

  • Department of Electrical Engineering
  • Taiwan Semiconductor Manufacturing Company
  • National Yang Ming Chiao Tung University
  • IEEE

External person

Jeorg Schulze

  • Univ. of the Ger. Fed. Armed Forces

External person

Yuan Bin Chung

  • Department of Engineering and System Science
  • National Tsing Hua University

External person

S. J. Wang

  • Agency for Science, Technology and Research, Singapore

External person

Fang Tsun Chu

  • Institute of Electronics
  • National Yang Ming Chiao Tung University
  • Department of Electrical Engineering
  • Industrial Technology Research Institute of Taiwan
  • Electronics Res. and Serv. Org.
  • Department O Electronics Engineering

External person

J. P. Jou

  • United Microelectronics Corporation

External person

Nie Chuan Chen

  • National Yang Ming Chiao Tung University
  • Department of Electrophysics
  • Chang Gung University
  • Department of Electronics Engineering
  • Department of Electronic Engineering
  • Chang Guang University
  • Institute of Electro-Optical Engineering
  • Department of Electrophysics
  • Department of Electrophysics
  • Department of Electronic Engineering
  • Graduate Institute of Electro-Optical Engineering
  • Department of Electro-physics

External person

X. F. Wang

  • National University of Singapore
  • Silicon Nano Device Laboratory

External person

Chun Che Chien

  • National Yang Ming Chiao Tung University

External person

L. Yang

  • General Electric
  • General Electric Co.

External person

Li Yan Xie

  • Institute of Electromagnetics and School of Electronic Engineering
  • University of Electronic Science and Technology of China

External person

Elena E. Lomonova

  • RAS - General Physics Institute

External person

C. W. Lin

  • Department of Electronics Engineering
  • Chung Hua University

External person

J. Andrew Yeh

  • Institute of NanoEngineering and MicroSystems
  • National Tsing Hua University
  • Institute of Nanoengineering and Microsystems
  • Center For Nanotechnology, Material Science, and Microsystem

External person

Chi Wei Chao

  • Department of Materials Science and Engineering
  • National Yang Ming Chiao Tung University
  • Department of Materials Science and Engineering
  • Department of Materials Science

External person

C. Chien

  • Center For Nanotechnology, Material Science, and Microsystem
  • National Tsing Hua University

External person

W. C. Lee

  • Inst. of Microelectronics
  • National Cheng Kung University

External person

Jian Hao Lu

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University

External person

Penghui Ma

  • Institute for Microstructural Sciences
  • National Research Council of Canada

External person

H. J. Lin

  • Taiwan Semiconductor Manufacturing Company

External person

H. L. Kao

  • Dept. of EE
  • National Yang Ming Chiao Tung University

External person

Tien Ko Wang

  • National Yang Ming Chiao Tung University
  • National Nano Device Laboratories Taiwan
  • Department of Engineering and System Science
  • National Tsing Hua University

External person

M. Vergnat

  • Université de Lorraine

External person

B. C. Lan

  • Department of Materials Science and Engineering
  • National Yang Ming Chiao Tung University
  • Department of Materials Science and Engineering
  • Department of Materials Science

External person

Andrei A. Gismatulin

  • RAS, Russian Academy of Sciences, Omsk Scientific Centre of the Siberian Branch of the Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, SB, Rzhanov Inst Semicond Phys
  • Novosibirsk State Tech Univ, Novosibirsk State Technical University

External person

Shi Hao Zeng

  • National Yang Ming Chiao Tung University

External person

C. Y. Hsieh

  • Center For Nanotechnology, Material Science, and Microsystem
  • National Tsing Hua University

External person

C. H. Kao

  • Department of Accounting Information
  • Takming College

External person

Chun Yuan Lu

  • No.16
  • Department of Engineering and System Science
  • National Tsing Hua University
  • Macronix International Co., Ltd. Taiwan

External person

J. Lin

  • United Microelectronics Corporation

External person

M. J. Wu

  • Department of Mechanical Engineering
  • National Yang Ming Chiao Tung University

External person

L. D. Deng

  • Dept. of Electronics Engineering
  • National Yang Ming Chiao Tung University

External person

J. Liu

  • United Microelectronics Corporation

External person

Meng Hsiu Wu

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University

External person

Yen Chin Liao

  • Dept. of Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Department of Electrical Engineering
  • Department O Electronics Engineering
  • Department of Electrical Engineering
  • Department of Electronics Engineering and Institute of Electronics
  • Tung University

External person

Alexander P. Yelisseyev

  • RAS - Sobolev Institute of Geology and Mineralogy, Siberian Branch

External person

V. Tsai

  • Texas Instruments

External person

C. H. Huang

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Dept. of Electronics Engineering
  • Taiwan Semiconductor Manufacturing Company

External person

S. C. Peng

  • Dept. of Electronics Engineering
  • National Yang Ming Chiao Tung University

External person

L. S. Fan

  • Institute of NanoEngineering and MicroSystems
  • National Tsing Hua University
  • Institute of Electronics
  • National Yang Ming Chiao Tung University
  • Microelectronics and Information Systems Research Center
  • Department of Electronic Engineering
  • NEMS Inst.
  • Center For Nanotechnology, Material Science, and Microsystem
  • Institute of Nanoengineering and Microsystems
  • Institute of Electronics Engineering

External person

Yuriy N. Novikov

  • RAS, Russian Academy of Sciences, Omsk Scientific Centre of the Siberian Branch of the Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, SB, Rzhanov Inst Semicond Phys

External person

J. Liu

  • Department of Electronics Eng.
  • National Yang Ming Chiao Tung University

External person

K. M. Chen

  • Dept. of E.E.
  • Univ. System of Taiwan
  • Dept. of EE
  • National Yang Ming Chiao Tung University

External person

Gennadiy N. Kamaev

  • RAS, Russian Academy of Sciences, Omsk Scientific Centre of the Siberian Branch of the Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, SB, Rzhanov Inst Semicond Phys
  • Russian Acad Sci, Russian Academy of Sciences, Omsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Rzhanov Inst Semicond Phys, Siberian Branch

External person

Z. R. Wang

  • School of EEE
  • Nanyang Technological University

External person

Xinye Liu

  • Aixtron SE

External person

Vladimir A. Gritsenko

  • Novosibirsk State University
  • RAS - Institute of Semiconductor Physics, Siberian Branch

External person

Chun Heng Chen

  • Department of Electrical Engineering
  • National Tsing Hua University
  • Industrial Technology Research Institute of Taiwan
  • Green Energy and Environment Research Laboratories
  • Department of Photonics
  • National Yang Ming Chiao Tung University

External person

Steven Hung

  • Applied Materials Incorporated

External person

J. H. Kao

  • Department of Electrical Engineering
  • Institute of Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Chung-Hua Polytechnic Institute
  • Department of Electrical Engineering
  • Chung Hua University

External person

M. Dutta

  • Electronics and Power Sources Directorate
  • United States Army Research Laboratory
  • Rutgers - The State University of New Jersey, New Brunswick
  • U.S. Army ETDL
  • Rutgers University

External person

Subhash C. Ruslagi

  • Institute of Microclcctromcs

External person

Pai Yong Wang

  • National Yang Ming Chiao Tung University
  • Department of Electrophysics
  • Department of Electrophysics
  • Ming Hsin University of Science and Technology Taiwan
  • Department of Elearophysics
  • Department of Electro-physics
  • Industrial Technology Research Institute of Taiwan
  • Department of Elearophysics
  • National Cliiao Tuns; University

External person

S. S. Chuang

  • Veterans General Hospital-Taipei
  • Department of Medical Research and Education

External person

W. S. Hwang

  • National University of Singapore
  • Silicon Nano Device Laboratory

External person

K. Lee

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University

External person

Che Hao Chang

  • Department of Materials Science and Engineering
  • National Tsing Hua University

External person

Vladimir A. Gritsenko

  • Novosibirsk State Tech Univ, Novosibirsk State Technical University

External person

Shen Chen

  • National University of Singapore
  • Silicon Nano Device Laboratory

External person

C. L. Cheng

  • Center For Nanotechnology, Material Science, and Microsystem
  • National Tsing Hua University

External person

A. C.H. Huan

  • Agency for Science, Technology and Research, Singapore

External person

C. H. Kao

  • Department of Accounting Informationv
  • Takming College

External person

J. Z. Huang

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University

External person

W. S. Huang

  • Center For Nanotechnology, Material Science, and Microsystem
  • National Tsing Hua University

External person

Patricia Liu

  • Applied Materials Incorporated

External person

Dun Bao Ruan

  • Dept. of Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Department of Electronics Engineering and Institute of Electronics
  • Natl Chiao Tung Univ, National Yang Ming Chiao Tung University, Dept Elect Engn & Comp Engn
  • National Tsing Hua University
  • Fuzhou University

External person

D. T. Shien

  • Institute of Nuclear Energy Research Taiwan

External person

N. Balasubmmanian

  • Dept of EEE
  • National University of Singapore
  • University of Texas at Austin
  • Hong Kong University of Science and Technology
  • Department of Electrical and Computer Engineering
  • Silicon Nano Device Laboratory
  • Department of Electrical Engineering
  • Agency for Science, Technology and Research, Singapore
  • National Yang Ming Chiao Tung University

External person

D. Y. Yang

  • Department of Electronics Eng.
  • National Yang Ming Chiao Tung University

External person

Chenghsin Chuang

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University

External person

L. F. Liu

  • Peking University
  • Institute of Microelectronics

External person

C. D. Kuo

  • Veterans General Hospital-Taipei
  • Department of Medical Research and Education
  • Provincial Tao-Yuan General Hospital
  • Cardiopulmonary Laboratory
  • National Yang-Ming University
  • National Taiwan University
  • Changhua Christian Hospital
  • Taipei General Veterans Hospital
  • National Yang Ming Chiao Tung University
  • Leadtek Research Inc.
  • Tanyu Research Laboratory
  • Tai-An Hospital
  • Hsiao Chung Cheng Healthcare Group

External person

Y. B. Chen

  • Dept. of Communications Engineering
  • National Yang Ming Chiao Tung University

External person

M. V. Zamoryanskaya

  • RAS - Ioffe Physico Technical Institute

External person

Yiyang Sun

  • Dept. Physics
  • National University of Singapore

External person

Vladimir A. Nadolinny

  • RAS - Nikolaev Institute of Inorganic Chemistry, Siberian Branch

External person

Babu Narayanan

  • Agency for Science, Technology and Research, Singapore

External person

C. C. Huang

  • Department of Electronics Eng.
  • National Yang Ming Chiao Tung University

External person

Jun Chen

  • Fudan University
  • Dept. of Microelectronics

External person

Dipankar Biswas

  • Center for High-Frequency Microelectronics
  • University of Michigan, Ann Arbor

External person

H. C. Hao

  • Center For Nanotechnology, Material Science, and Microsystem
  • National Tsing Hua University

External person

Xin Cheng Tian

  • School of Microelectronics
  • Xidian University

External person

C. H. Wu

  • National Yang Ming Chiao Tung University
  • Inst. of Environmental Engineering
  • National Chi Nan University
  • Department of Electrical Engineering
  • National Cheng Kung University
  • Department of Physics
  • Department of Electric Engineering
  • Chung Hua University
  • Dept. of Mech. Materials Engineering
  • National Formosa University
  • Integrated Brain Research Laboratory
  • Ministry of Economic Affairs, R.O.C.

External person

Joseph Ya Min Lee

  • Department of Electrical Engineering
  • National Tsing Hua University

External person

L. H. Lai

  • Dept. of Electronics Engineering
  • National Yang Ming Chiao Tung University

External person

K. C. Chang

  • Depatment of Electronics Engineering
  • National Yang Ming Chiao Tung University

External person

B. Gao

  • Institute of Microelectronics
  • Peking University
  • Institute of Microelectronics

External person

Yi Han Wu

  • Institute of Electronics
  • National Yang Ming Chiao Tung University
  • Department O Electronics Engineering

External person

Tzu Yueh Chang

  • National Yang Ming Chiao Tung University
  • Department of Photonics
  • Department of Photonics
  • Department of Electronics Engineering and Institute of Electronics
  • Department of Photonic
  • Department O Electronics Engineering
  • Department of Photonics
  • Institute of Electro-Optical Engineering
  • Display Institute

External person

Shih Yang Chiu

  • Department of Electro-physics
  • National Yang Ming Chiao Tung University

External person

Vitalii A. Voronkovskii

  • RAS, Russian Academy of Sciences, Omsk Scientific Centre of the Siberian Branch of the Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, SB, Rzhanov Inst Semicond Phys

External person

J. T. Lin

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University

External person

Sally Liu

  • National Yang Ming Chiao Tung University
  • Taiwan Semiconductor Manufacturing Company

External person

G. P. Kothiyal

  • Solid State Electronics Laboratory
  • University of Michigan, Ann Arbor

External person

V. V. Atuchin

  • RAS - Institute of Semiconductor Physics, Siberian Branch
  • Institute of Chemistry
  • Tomsk State University
  • Novosibirsk State University
  • Laboratory of Single Crystal Growth
  • Functional Electronics Laboratory
  • South Ural State University
  • Tyumen State University

External person

P. J. Chu

  • Center For Nanotechnology, Material Science, and Microsystem
  • National Tsing Hua University

External person

Hsiao-Hsuan Hsu

  • National Chiao Tung University
  • Natl Taipei Univ Technol, National Taipei University of Technology, Dept Mat & Mineral Resources Engn

External person

Chien Liang Kuo

  • Dept. of Electrical Engineering
  • National Central University
  • National Yang Ming Chiao Tung University
  • Taiwan Semiconductor Manufacturing Company
  • Dept. of Electrical Engineering
  • Department of Electrical Engineering

External person

Y. H. Wu

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Dept. of Electronics Engineering

External person

C. N. Lin

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • United Microelectronics Corporation

External person

T. B. Wu

  • National Tsing Hua University
  • Department of Materials Science and Engineering
  • Department of Materials Science and Engineering
  • Department of Materials Science and Engineering
  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Department of Materials Science and Engineering
  • University of Illinois at Urbana-Champaign
  • Department of Materials Science and Engineering

External person

Y. Y. Wang

  • Institute of Microelectronics
  • Peking University
  • Institute of Microelectronics
  • Institute of Microelectronics
  • IEEE

External person

P. Mei

  • GlobiTech Inc.

External person

Tim Chen

  • AUCMOS Technologies

External person

Yousef Zebda

  • Solid-State Electronics Laboratory and Center for High Frequency Microelectronics
  • University of Michigan, Ann Arbor

External person

Bo Ting Chen

  • IEEE
  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University
  • Department O Electronics Engineering
  • Dept. of Electrical and Computer Engineering
  • Department of Electrical Engineering
  • Institute of Electronics
  • Department of Electronics Eng.
  • Department of Computer Science

External person

L. D. Pokrovsky

  • RAS - Institute of Semiconductor Physics, Siberian Branch

External person

Wen Jun Liu

  • Fudan University
  • State Key Laboratory of ASIC and Systems
  • Dept. of Microelectronics

External person

V. Mohammed Zackriya

  • School of Electronics Engineering
  • Dept. of Electronics Engineering
  • Vellore Institute of Technology
  • National Yang Ming Chiao Tung University

External person

H. M. Chang

  • Chang Gung University
  • Department of Electronic Engineering
  • Chung-shan Institute of Science and Technology Taiwan

External person

Shang Rong Li

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University

External person

R. Borroff

  • Department of Physics
  • University of Michigan, Ann Arbor

External person

A. V. Shaposhnikov

  • RAS - Institute of Semiconductor Physics, Siberian Branch

External person

L. Chan

  • Technology Development

External person

Pin Ho

  • General Electric

External person

James T. Spencer

  • General Electric

External person

Chien An Chen

  • Institute of Polymer Science and Engineering
  • National Taiwan University

External person

S. W. Sun

  • National Yang Ming Chiao Tung University
  • United Microelectronics Corporation
  • United Microelectronics Corporation (UMC)
  • Technology Development Division
  • Technology and Process Development Division

External person

K. C. Hsieh

  • Elec. and Comp. Eng. Department
  • University of Illinois at Urbana-Champaign
  • CCEEL
  • Dept. of Mat. Sci. and Engineering
  • Nano Device Laboratory
  • National Yang Ming Chiao Tung University

External person

Ci Ling Pan

  • Department of Photonics
  • National Yang Ming Chiao Tung University
  • Inst. of Electro-Optical Engineering
  • Institute of Photonics Technologies
  • National Tsing Hua University
  • Department of Photonics and Institute of Electro-Optical Engineering
  • Inst. of Electro-Optic Engineering
  • Department of Physics
  • Department of Photonics
  • IEEE
  • Department of Photonics
  • Institute of Photonics Technologies
  • Frontier Research Center on Fundamental and Applied Science of Matters
  • Department O Electronics Engineering
  • Photon-Factory
  • Department of Physics
  • Precision Instrument Development
  • Cent
  • Inst. Electro-Optical Eng. Dept. E.
  • Department of Electrophysics
  • Department of Physics
  • Institute of Photonics Technologies
  • Institute of Electro-Optical Engineering
  • Frontier Research Center on Fundamental and Applied Sciences of Matters
  • Department of Physics
  • Department of Photonics
  • Department of Electronics and Electrical Engineering
  • Frontier Research Center on Fundamental and Applied Sciences of Matters
  • University of Sheffield
  • National Institutes of Natural Sciences - Institute for Molecular Science

External person

Mohammed Zackriya

  • School of Electronics Engineering
  • Dept. of Electronics Engineering
  • Vellore Institute of Technology
  • National Yang Ming Chiao Tung University

External person

Z. L. Xia

  • Institute of Microelectronics
  • Peking University

External person

Chien Chun Che

  • National Yang Ming Chiao Tung University

External person

Doran D. Smith

  • U.S. Army ETDL

External person

Sanjay Banerjee

  • University of Texas at Austin

External person

T. H. Teng

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University

External person

S. Dhar

  • Center for Wireless Integrated Microsystems
  • University of Michigan, Ann Arbor

External person

Hsin Ying Chen

  • National Tsing Hua University

External person

Kai Kang

  • Institute of Electromagnetics and School of Electronic Engineering
  • University of Electronic Science and Technology of China

External person

Kai Zhi Kan

  • Department of Electronics Engineering and Institute of Electronics
  • National Yang Ming Chiao Tung University
  • Dept. of Electronics Engineering

External person

G. Nasserbakht

  • Texas Instruments

External person

Johnny K.O. Sins

  • Dept of EEE
  • Hong Kong University of Science and Technology

External person

M. H. Lin

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University

External person

Shi Jin Ding

  • Institute of Microclcctromcs
  • National University of Singapore
  • Silicon Nano Device Laboratory

External person

D. Gui

  • Chartered Semiconductor Manufacturing Ltd.

External person

Weimin Zhou

  • U.S. Army ETDL

External person

Liu Haitao

  • Dept of EEE
  • National University of Singapore
  • University of Texas at Austin
  • Hong Kong University of Science and Technology
  • Department of Electrical and Computer Engineering
  • Silicon Nano Device Laboratory
  • Department of Electrical Engineering
  • Agency for Science, Technology and Research, Singapore
  • National Yang Ming Chiao Tung University

External person

Cha Hsin Lin

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University
  • Industrial Technology Research Institute of Taiwan
  • Electronics and Opto-electronics Research Laboratories

External person

Chih Huang Lai

  • Department of Materials Science and Engineering
  • National Tsing Hua University
  • Department of Materials Science and Engineering
  • Department of Materials Science and Engineering
  • Department of Materials Science and Engineering
  • Department of Materials Science and Engineering
  • National Tsing llua university
  • Center For Nanotechnology, Material Science, and Microsystem

External person

K. S. Chaing-Liaoc

  • Department of Engineering and System Science
  • National Tsing Hua University

External person

T. Y. Chang

  • Lucent
  • Nokia

External person

Lang Zeng

  • Peking University
  • Institute of Microelectronics

External person

A. Huang

  • Center For Nanotechnology, Material Science, and Microsystem
  • National Tsing Hua University

External person

J. M. Lai

  • Department of Mechanical Engineering
  • National Yang Ming Chiao Tung University
  • Hsinchu Sci.-Based Industrial Park
  • MEMS Department
  • R and D Center
  • SBIP
  • Department of Mechanical Engineering
  • Department of Mechanical Engineering

External person

T. Y. Chang

  • Lucent
  • Nokia

External person

P. Huang

  • Institute of Microelectronics
  • Peking University

External person

T. E. Chang

  • Dept. of Electronics Engineering
  • National Yang Ming Chiao Tung University
  • Department of Electrical Engineering
  • Department of Electrical Engineering
  • Taiwan Semiconductor Manufacturing Company

External person

P. J. Tzeng

  • Industrial Technology Research Institute of Taiwan
  • Electronics and Opto-electronics Research Laboratories
  • Electronics Research and Service Organization
  • Electronics Res. and Serv. Org.
  • National Taiwan Normal University
  • National Central University

External person

H. Shen

  • United States Army Research Laboratory
  • Electronics and Power Sources Directorate
  • Rutgers - The State University of New Jersey, New Brunswick
  • U.S. Army ETDL
  • Rutgers University
  • SAIC

External person

M. H. Chang

  • United Microelectronics Corporation

External person

Y. J. Lee

  • National Nano Devices Laboratory

External person

Kai Yu Lee

  • Department of Electrical Engineering
  • National Yang Ming Chiao Tung University

External person

Bau Tong Dai

  • National Nano Device Laboratories Taiwan
  • National Yang Ming Chiao Tung University
  • National Sun Yat-sen University
  • Dept. of Electronics Engineering
  • Department of Physics
  • IEEE

External person

Yih Chung Cheng

  • Department of Electronics Eng.
  • National Yang Ming Chiao Tung University

External person

Gong Ru Lin

  • National Yang Ming Chiao Tung University
  • Department of Photonics
  • Inst. of Electro-Optical Engineering
  • Tatung University
  • Department of Electrical Engineering
  • National Taiwan University
  • Tatung Institute of Technology Taiwan
  • IEEE
  • Inst. of Electro-Optical Engineering
  • National Taipei University of Technology
  • Gradute Institute of OET
  • Nanophotonic Center
  • Industrial Technology Research Institute of Taiwan
  • Department of Photonics
  • Department of Photonics and Institute of Electro-Optical Engineering
  • Inst. of Electro-Optical Engineering
  • Institute of Photonics and Optoelectronics
  • Inst. of Electro-Optical Engineering
  • Graduate Institute of Photonics and Optoelectronics
  • Electrical Engineering Department
  • Department O Electronics Engineering
  • Opto-electronics and Systems Laboratories
  • Department of Electrical Engineering
  • Department of Photonics
  • Department of Electrical Engineering National
  • Graduate Institute of Photonics and Optoelectronics
  • Department of Electrical Engineering
  • Institute of Networking and Multimedia
  • Taiwan University

External person

Chia Chin Yeo

  • Silicon Nano Device Lab.
  • National University of Singapore

External person

Ming Jer Tsai

  • Department of Computer Science
  • Institute of Communications Engineering
  • National Chengchi University
  • National Tsing Hua University
  • Dept. of Computer Science
  • Industrial Technology Research Institute of Taiwan
  • Electronics and Opto-electronics Research Laboratories

External person

B. Chen

  • Institute of Microelectronics
  • Peking University
  • Institute of Microelectronics

External person

Yan Kai Chiou

  • Department of Materials Science and Engineering
  • National Tsing Hua University
  • Department of Materials Science and Engineering
  • Department of Materials Science and Engineering

External person

J. Chu

  • Department of Electrical and Computer Engineering
  • University of Florida
  • University of Florida

External person

S. DiVita

  • United States Army
  • U.S. Army Communications Electronics Command

External person

Tsung-Ying Yu

  • Natl Chiao Tung Univ, National Chiao Tung University, Coll Elect & Comp Engn, Inst Electroopt Engn

External person

J. A. Glass

  • General Electric

External person

J. Y. Chang

  • Department of Applied Chemistry
  • National Yang Ming Chiao Tung University
  • Center For Nanotechnology, Material Science, and Microsystem
  • National Tsing Hua University
  • National Taiwan University of Science and Technology

External person

J. S. Pan

  • Agency for Science, Technology and Research, Singapore

External person

Ziad Osman

  • Department of Electrical Engineering
  • University of Florida

External person

Weng Kent Chan

  • National Tsing Hua University

External person

K. Hsueh

  • Center For Nanotechnology, Material Science, and Microsystem
  • National Tsing Hua University

External person

M. Kao

  • General Electric
  • General Electric Co.

External person

S. S. Li

  • Department of Electrical and Computer Engineering
  • University of Florida
  • University of Florida

External person

A. I. Komonov

  • RAS - Institute of Semiconductor Physics, Siberian Branch

External person

Chun Fu Lu

  • Department of Materials Science and Engineering
  • National Taiwan University

External person

C. C. Lin

  • United Microelectronics Corporation

External person

F. Ganikhanov

  • Inst. of Electro-Optical Engineering
  • National Yang Ming Chiao Tung University

External person

H. Beneking

  • Institute of Semiconductor Electronics
  • RWTH Aachen University

External person

A. A. Saraev

  • RAS - Institute of Semiconductor Physics, Siberian Branch

External person

R. Merlin

  • Department of Physics
  • University of Michigan, Ann Arbor
  • Department of Physics

External person

D. Prinslow

  • Texas Instruments

External person

Shawn S.H. Hsu

  • Department of Electrical Engineering
  • National Tsing Hua University
  • Center For Nanotechnology, Material Science, and Microsystem

External person

T. Y. Chang

  • National Sun Yat-sen University
  • Nokia

External person

Yu Chien Huang

  • College of Photonics
  • National Yang Ming Chiao Tung University

External person

Cheng Tung Huang

  • Device Department
  • United Microelectronics Corporation
  • Taiwan Semiconductor Manufacturing Company
  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University
  • United Microelectronic Corporation
  • United Microelectronics Corporation (UMC)
  • Institute of Electronics

External person

Stefan De Gendt

  • Division of Molecular Imaging and Photonics
  • Interuniversitair Micro-Elektronica Centrum
  • KU Leuven
  • IMEC
  • Imec

External person

J. H. Chen

  • Center For Nanotechnology, Material Science, and Microsystem
  • National Tsing Hua University

External person

S. P. Peng

  • Department O Electronics Engineering
  • National Yang Ming Chiao Tung University

External person

K. Y. Lee

  • Dept. of Electronics Engineering
  • National Yang Ming Chiao Tung University

External person

Haitao Liu

  • Dept of EEE
  • Hong Kong University of Science and Technology

External person

E. V. Ivanova

  • RAS - Ioffe Physico Technical Institute

External person

Y. S. Chen

  • Institute of Microelectronics
  • Peking University

External person

Igor P. Prosvirin

  • RAS, Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Russian Academy of Sciences, SB, Boreskov Inst Catalysis

External person

M. Marso

  • Institute of Semiconductor Electronics
  • RWTH Aachen University

External person

P. K. Singh

  • National University of Singapore
  • Silicon Nano Device Laboratory

External person

Shaoyan Di

  • Peking University
  • Key Laboratory of Microelectronic Devices and Circuits

External person

Yue Hao

  • School of Microelectronics
  • Xidian University

External person

Kuan Cheng Su

  • National Yang Ming Chiao Tung University
  • United Microelectronics Corporation
  • ESD Engineering Department
  • Reliability Technology and Assurance Division

External person

Wei Qi Li

  • Solid-State Electronics Laboratory and Center for High Frequency Microelectronics
  • University of Michigan, Ann Arbor

External person

Grigory K. Krivyakin

  • RAS, Russian Academy of Sciences, Omsk Scientific Centre of the Siberian Branch of the Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, SB, Rzhanov Inst Semicond Phys

External person

Ping Hung Tsai

  • Department of Engineering and System Science
  • National Tsing Hua University

External person