Keyphrases
AlGaAs
14%
Aluminum Oxide
35%
Annealing
11%
Capacitance Density
22%
Capacitors
17%
Charge Transport
11%
Dielectric
35%
Electron Mobility
9%
Equivalent Oxide Thickness
19%
Gallium Arsenide
22%
Gate Dielectric
49%
GeOx
9%
Germanium
11%
Germanium-on-insulator (GeOI)
13%
HfAlO
9%
HfLaO
18%
HfO2
34%
High Capacitance
9%
High Density
16%
High Mobility
17%
High Performance
42%
High Temperature
10%
High Work Function
11%
High-k Dielectric
14%
Ion Implantation
9%
LaAlO3
12%
Leakage Current
17%
Low Leakage Current
15%
Low Temperature
12%
Low Voltage
10%
Memory Device
12%
Memory Window
10%
Metal Gate
25%
Metal-insulator-metal Capacitor
30%
MIM Capacitor
15%
Molecular Beam Epitaxy
11%
MOSFET
52%
NFmin
11%
NMOSFET
31%
Non-volatile Memory
9%
Oxides
14%
PMOSFET
19%
Resistive Random Access Memory (ReRAM)
25%
RF MOSFET
9%
RF Noise
9%
Si Substrate
13%
Silica
39%
Silicon Nitride
9%
Thin-film Transistors
11%
Transistor
13%
Material Science
Al2O3
26%
Aluminium Gallium Arsenide
9%
Annealing
20%
Capacitance
38%
Capacitor
51%
Charge Trapping
5%
Density
40%
Dielectric Material
100%
Electrical Property
8%
Electron Mobility
11%
Electronic Circuit
17%
Ferroelectric Material
8%
Film
15%
Gallium
5%
Gallium Arsenide
17%
Germanium
9%
Heterojunction
5%
Hole Mobility
13%
Indium
5%
Indium Gallium Arsenide
5%
Ion Implantation
5%
Luminescence
5%
Metal Oxide
11%
Metal-Oxide-Semiconductor Field-Effect Transistor
58%
Molecular Beam Epitaxy
10%
Optical Property
6%
Oxide Compound
47%
Oxygen Vacancy
11%
Percolation
5%
Phase Composition
7%
Photoluminescence
5%
Resistive Random-Access Memory
16%
Resonator
6%
Schottky Barrier
7%
Silicide
6%
Silicon
17%
Superlattice
5%
Surface (Surface Science)
7%
Thin Films
6%
Thin-Film Transistor
22%
Titanium Dioxide
7%
Titanium Oxide
7%
Transistor
19%
Transmission Electron Microscopy
6%
Zinc Oxide
5%
Engineering
Aluminium Gallium Arsenide
10%
Bandpass Filter
6%
Chemical Vapor Deposition
8%
Device Performance
5%
Dielectrics
39%
Electric Power Utilization
5%
Flash Memory
5%
Gallium Arsenide
19%
Gate Dielectric
35%
Gate Oxide
7%
Gate Stack
5%
Indium Gallium Arsenide
9%
Low-Temperature
19%
Metal Gate
21%
Metal Oxide Semiconductor
5%
Metal-Insulator-Metal
19%
Metal-Oxide-Semiconductor Field-Effect Transistor
78%
Nodes
7%
Noise Figure
7%
Nonvolatile Memory
5%
Oxide Thickness
21%
Oxygen Vacancy
5%
Passivation
5%
Polysilicon
5%
Quantum Well
7%
Radio Frequency
8%
Random Access Memory Device
5%
Rapid Thermal Annealing
6%
Resistive
15%
Resistive Random Access Memory
16%
Resonator
6%
Si Substrate
10%
Silicon Dioxide
20%
Subthreshold Slope
5%
Superlattice
8%
Thin Films
5%
Thin-Film Transistor
14%
Tunnel Construction
5%
Vapor Deposition
6%
VLSI Circuits
7%