Keyphrases
MOSFET
52%
Gate Dielectric
49%
High Performance
42%
Silica
39%
Aluminum Oxide
35%
Dielectric
35%
HfO2
34%
NMOSFET
31%
Metal-insulator-metal Capacitor
30%
Resistive Random Access Memory (ReRAM)
25%
Metal Gate
25%
Capacitance Density
22%
Gallium Arsenide
22%
PMOSFET
19%
Equivalent Oxide Thickness
19%
HfLaO
18%
Leakage Current
17%
Capacitors
17%
High Mobility
17%
High Density
16%
MIM Capacitor
15%
Low Leakage Current
15%
High-k Dielectric
14%
AlGaAs
14%
Oxides
14%
Germanium-on-insulator (GeOI)
13%
Si Substrate
13%
Transistor
13%
Memory Device
12%
LaAlO3
12%
Low Temperature
12%
Annealing
11%
Thin-film Transistors
11%
Molecular Beam Epitaxy
11%
NFmin
11%
High Work Function
11%
Charge Transport
11%
Germanium
11%
High Temperature
10%
Low Voltage
10%
Memory Window
10%
GeOx
9%
HfAlO
9%
High Capacitance
9%
Silicon Nitride
9%
Non-volatile Memory
9%
Electron Mobility
9%
RF MOSFET
9%
Ion Implantation
9%
RF Noise
9%
Material Science
Dielectric Material
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
58%
Capacitor
51%
Oxide Compound
47%
Density
40%
Capacitance
38%
Al2O3
26%
Thin-Film Transistor
22%
Annealing
20%
Transistor
19%
Silicon
17%
Gallium Arsenide
17%
Electronic Circuit
17%
Resistive Random-Access Memory
16%
Film
15%
Hole Mobility
13%
Metal Oxide
11%
Electron Mobility
11%
Oxygen Vacancy
11%
Molecular Beam Epitaxy
10%
Aluminium Gallium Arsenide
9%
Germanium
9%
Electrical Property
8%
Ferroelectric Material
8%
Surface (Surface Science)
7%
Titanium Dioxide
7%
Phase Composition
7%
Schottky Barrier
7%
Titanium Oxide
7%
Silicide
6%
Thin Films
6%
Transmission Electron Microscopy
6%
Resonator
6%
Optical Property
6%
Charge Trapping
5%
Heterojunction
5%
Zinc Oxide
5%
Photoluminescence
5%
Indium Gallium Arsenide
5%
Superlattice
5%
Ion Implantation
5%
Luminescence
5%
Gallium
5%
Indium
5%
Percolation
5%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
78%
Dielectrics
39%
Gate Dielectric
35%
Metal Gate
21%
Oxide Thickness
21%
Silicon Dioxide
20%
Metal-Insulator-Metal
19%
Gallium Arsenide
19%
Low-Temperature
19%
Resistive Random Access Memory
16%
Resistive
15%
Thin-Film Transistor
14%
Aluminium Gallium Arsenide
10%
Si Substrate
10%
Indium Gallium Arsenide
9%
Superlattice
8%
Radio Frequency
8%
Chemical Vapor Deposition
8%
Noise Figure
7%
Gate Oxide
7%
Nodes
7%
VLSI Circuits
7%
Quantum Well
7%
Vapor Deposition
6%
Bandpass Filter
6%
Rapid Thermal Annealing
6%
Resonator
6%
Nonvolatile Memory
5%
Device Performance
5%
Polysilicon
5%
Random Access Memory Device
5%
Oxygen Vacancy
5%
Gate Stack
5%
Flash Memory
5%
Passivation
5%
Electric Power Utilization
5%
Thin Films
5%
Subthreshold Slope
5%
Metal Oxide Semiconductor
5%
Tunnel Construction
5%
