Keyphrases
Annealing
24%
ATLAS Detector
100%
ATLAS Experiment
12%
Collision Data
14%
Confidence Level
13%
Continuous Wave
11%
Diode-end-pumped
11%
Diode-pumped
37%
Dual-wavelength
11%
Electric Field (E-field)
11%
Electrical Characteristics
11%
Electrical Properties
16%
Electronic Structure
17%
Energy Center
16%
Epilayer
15%
Epitaxial
13%
Exciton
16%
Gallium Arsenide
36%
Gate Dielectric
13%
Graphene
12%
Heterostructure
16%
High Efficiency
11%
High Energy
15%
High Performance
20%
High Power
26%
High Temperature
14%
In Situ
17%
Indium Gallium Nitride (InGaN)
17%
InGaAs
12%
Integrated Luminosity
26%
Intra-cavity
15%
Kondo
11%
Large Hadron Collider
17%
Leptons
20%
Light-emitting Diodes
11%
Low Temperature
38%
Magnetic Field
28%
Magnetic Properties
12%
Magnetization
12%
Metal-organic Chemical Vapor Deposition (MOCVD)
18%
Missing Transverse Momentum
18%
Mode-locking
14%
Molecular Beam Epitaxy
27%
Molybdenite
11%
MOSFET
12%
Muon
15%
Nanowires
15%
Observatory
11%
Optical Properties
26%
Oxides
23%
Passive Q-switching
24%
Phase Transition
11%
Photoluminescence
28%
Photopolymer
14%
Poly(methyl methacrylate)
11%
Poly-Si
18%
Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs)
13%
Polysilicon
11%
Power Output
15%
Pp Collisions
61%
Production Cross Section
17%
Proton-proton Collisions
32%
Pulse Repetition Frequency
13%
Pulse Width
10%
Pulsed Laser Deposition
15%
Pulsed Power
11%
Pumping Power
29%
Q-switched Nd
15%
Q-switching
14%
Quantum Critical Point
11%
Quantum Dots
44%
Quantum Well
22%
Repetition Rate
14%
Resistivity
11%
Room Temperature
28%
Saturable Absorber
13%
Self-assembled Quantum Dots
12%
Self-mode-locking
18%
Si(111)
12%
Silica
12%
Single Crystal
22%
Structural Properties
14%
Superconductivity
15%
Superconductor
21%
Temperature Effect
31%
Transport Properties
11%
Transverse Momentum
14%
Two Dimensional
22%
Type-II Superconductors
14%
Ultrafast
22%
Ultrafast Dynamics
11%
Ultrafast Pump-probe Spectroscopy
11%
Ultrathin
16%
Vertical-cavity Surface-emitting Laser (VCSEL)
14%
Vortex
11%
W Boson
11%
Wave Function
14%
X-ray Absorption Spectroscopy
13%
YVO4
38%
Zinc Selenide
17%
Engineering
Activation Energy
7%
Anisotropic
8%
Atomic Force Microscopy
6%
Average Power
6%
Band Gap
9%
Bragg Cell
15%
Carrier Concentration
7%
Cavity Surface
10%
Chemical Vapor Deposition
15%
Continuous Wave
9%
Conversion Efficiency
12%
Cross Section
16%
Deep Level
9%
Deposited Film
5%
Diamond
6%
Dielectrics
11%
Electric Field
15%
Electronic State
7%
Emitting Laser
15%
Energy Engineering
51%
Energy Levels
7%
Engineering
7%
Experimental Result
28%
Femtosecond Laser
6%
Field Effect Transistor
12%
Field-Effect Transistor
11%
Final State
6%
Gain Medium
7%
Gallium Arsenide
36%
Gate Dielectric
7%
Gate Oxide
10%
Gaussians
13%
Good Agreement
8%
Graphene
10%
Ground State
6%
Growth Temperature
7%
Harmonic Generation
6%
Harmonics
6%
Heterojunctions
10%
Heterostructures
8%
Holograms
7%
Indium Gallium Arsenide
12%
Lepton
6%
Light-Emitting Diode
16%
Liquid Crystal
9%
Low-Temperature
32%
Magnetic Field
19%
Metal-Oxide-Semiconductor Field-Effect Transistor
18%
Molybdenum Disulfide
8%
Monolayers
10%
Nanomaterial
10%
Nanorod
5%
Nanoscale
8%
Nanowire
14%
Nitride
8%
Optical Fiber Coupling
7%
Optical Phonon
5%
Optoelectronics
9%
Oscillator
13%
Output Power
27%
Passivation
5%
Peak Power
15%
Phase Composition
11%
Polysilicon
32%
Pulse Duration
14%
Pulse Energy
9%
Pulse Repetition Rate
8%
Pulsed Laser
12%
Pump Power
27%
Quantum Dot
46%
Quantum Well
36%
Raman Spectra
11%
Rapid Thermal Annealing
5%
Ray Absorption
7%
Ray Diffraction
13%
Reflectance
17%
Repetition Rate
14%
Resonator
10%
Response Time
6%
Room Temperature
21%
Sapphire Substrate
10%
Saturable Absorber
12%
Scanning Tunneling Microscopy
5%
Si Substrate
7%
Silicon Dioxide
13%
Solar Cell
11%
Spectral Range
6%
State Laser
7%
Superconductor
16%
Superlattice
8%
Temperature Dependence
9%
Terahertz
8%
Thin Films
51%
Thin-Film Transistor
16%
Transients
12%
Tunnel Construction
16%
Two Dimensional
22%
Valence Band
7%
Vapor Deposition
14%
Vortex
19%