Material Science
Ferroelectric Material
100%
Transistor
84%
Density
78%
Field Effect Transistor
71%
Film
70%
Surface (Surface Science)
62%
Capacitance
54%
Electron Mobility
48%
Oxide Compound
48%
Dielectric Material
44%
Electronic Circuit
40%
Heterojunction
34%
Silicon
33%
Capacitor
32%
Nanowire
30%
High Entropy Alloys
30%
Annealing
29%
Metal-Oxide-Semiconductor Field-Effect Transistor
26%
Monolayers
25%
Oxidation Reaction
22%
Contact Resistance
21%
Thin Films
20%
Transmission Electron Microscopy
18%
ZnO
16%
Thermal Stability
16%
Metal Oxide
15%
Transition Metal Dichalcogenide
15%
Ultimate Tensile Strength
15%
Grain Size
14%
Two-Dimensional Material
14%
Grain Boundary
13%
Nanosheet
13%
Chemical Vapor Deposition
12%
Solder Joint
12%
X-Ray Photoelectron Spectroscopy
12%
Electroplating
12%
Intermetallics
11%
Aluminum Nitride
11%
Electrical Property
11%
Resistive Random-Access Memory
11%
Sapphire
11%
Indium Gallium Arsenide
11%
Indium
10%
Gallium Nitride
10%
Electrical Resistivity
10%
Ferroelectricity
10%
Nanoparticle
10%
Oxide Semiconductor
10%
Al2O3
10%
Charge Trapping
10%
Zirconia
10%
Nucleation
10%
Superlattice
10%
Epitaxy
10%
Phase Composition
10%
Schottky Barrier
10%
Thermal Cycling
9%
Hafnium
9%
Anisotropy
9%
Medium-Entropy Alloy
9%
Surface Roughness
9%
Polyimide
9%
Nanorod
8%
Nanostructure
8%
Single Crystal
8%
Germanium
8%
Scanning Electron Microscopy
8%
Oxygen Vacancy
8%
Metal-Organic Chemical Vapor Deposition
8%
Plastic Deformation
8%
Composite Material
8%
Power Device
8%
Thin-Film Transistor
7%
High-Resolution Transmission Electron Microscopy
7%
Diffusivity
7%
Light-Emitting Diode
7%
Yield Stress
7%
Molybdenum
7%
Photoluminescence
7%
Permittivity
7%
X-Ray Diffraction
6%
Surface Modification
6%
Thermal Stress
6%
Crystal Defect
6%
Magnesium Oxide
6%
Buffer Layer
6%
Thermal Expansion
6%
Titanium Dioxide
6%
Strength of Materials
6%
Electrodeposition
6%
Electrical Breakdown
6%
Finite Element Method
6%
Graphene
6%
Scanning Tunneling Microscopy
6%
Doping (Additives)
6%
Three Dimensional Printing
5%
Carbon Dioxide
5%
Materials Property
5%
Nanocomposite
5%
Carrier Concentration
5%
Keyphrases
GaN HEMT
55%
Low Temperature
44%
Nanotwinned Cu
42%
Carbon Nanotube Field Effect Transistor (CNTFET)
37%
Ferroelectric Field-effect Transistor (FeFET)
36%
Cu-Cu Bonding
35%
Nanoporous Copper
32%
High Electron Mobility Transistor
32%
AlGaN-GaN
30%
Fin Field-effect Transistor (FinFET)
30%
Compact Model
28%
Hybrid Bonding
26%
(111)-oriented
26%
Annealing
26%
HfO2
25%
Ultrathin
24%
High Performance
23%
Bonding Interface
23%
MOSFET
23%
Gate Stack
22%
High-entropy Alloy
22%
Transistor
21%
Electromigration
20%
Threshold Voltage
20%
Mechanical Properties
20%
Negative Capacitance
19%
Interfacial Layer
18%
Enhancement-mode (E-mode)
18%
Cu Film
18%
Metal-organic Chemical Vapor Deposition (MOCVD)
18%
In Situ
18%
Electrical Properties
17%
P-GaN
16%
Molybdenite
16%
Capacitors
16%
Subthreshold Swing
15%
Microbump
15%
Metal-insulator-semiconductor
15%
GaN MIS-HEMT
15%
Atomic Scale
14%
Non-volatile Memory
14%
Heterostructure
14%
Gate Length
14%
Electrical Characteristics
14%
Two Dimensional
14%
Microstructure
13%
On-resistance
13%
Bonding Strength
13%
GaN-on-Si
13%
Ka-band
13%
Heterogeneous Integration
13%
Nanotwins
13%
Dielectric
12%
Room Temperature
12%
Bonding Process
12%
Cu-SiO2
12%
3D IC
12%
InGaAs
12%
3D Integration
12%
Passivation Layer
11%
Silica
11%
Additive Manufacturing
11%
Gallium Nitride
11%
Transconductance
11%
Nanowires
11%
CoCrNi Medium-entropy Alloy
11%
On-state Current
11%
Charge Trapping
11%
Semiconductors
11%
Device Performance
11%
Passivation
11%
Resistive Random Access Memory (ReRAM)
11%
Gate Dielectric
10%
Cu Joint
10%
Si Substrate
10%
Atomic Layer Deposition
10%
Cu-Cu Joints
10%
Field-effect Transistors
10%
High Strength
10%
Bonding Quality
10%
Ferroelectric Capacitor
10%
Band Application
10%
Resistive Switching
10%
Memory Window
10%
Memristor
10%
Short Channel
10%
Temperature Effect
10%
Electroplating
10%
Magnetic Tunnel Junction
10%
Current Density
10%
Low Thermal Budget
10%
Contact Resistance
9%
Oxides
9%
Copper Direct Bonding
9%
GaSb
9%
Medium-entropy Alloy
9%
Leakage Current
9%
Gate-all-around
9%
Highly Oriented
9%
Back-end-of-line
9%
Engineering
Low-Temperature
48%
Metal-Oxide-Semiconductor Field-Effect Transistor
43%
Field Effect Transistor
42%
Dielectrics
35%
Field-Effect Transistor
34%
Joints (Structural Components)
29%
Gate Stack
27%
Nitride
23%
Direct Bonding
21%
Millimeter Wave
20%
Passivation
20%
Nanowire
19%
Silicon Dioxide
19%
Indium Gallium Arsenide
18%
Heterojunctions
18%
Antenna
17%
Bonding Strength
16%
Interfacial Layer
16%
Resistive
15%
Breakdown Voltage
15%
Electromigration
15%
Molybdenum Disulfide
15%
Atomic Layer Deposition
14%
Interconnects
14%
Gate Bias
14%
Gate Length
14%
Gate Dielectric
14%
Two Dimensional
14%
Current Drain
14%
Passivation Layer
14%
Experimental Result
13%
Ka-Band
12%
Power Device
12%
Cutoff Frequency
12%
Bonding Process
11%
Nonvolatile Memory
11%
Oxide Thickness
11%
Thin Films
10%
Si Substrate
10%
Device Performance
10%
Tunnel Construction
10%
Thin-Film Transistor
10%
Electrical Performance
10%
High-Entropy Alloys
10%
Core-Shell
10%
Radio Frequency
10%
Channel Length
9%
Max
9%
Engineering
9%
Nodes
9%
Resistive Random Access Memory
9%
Side Wall
9%
Ray Photoelectron Spectroscopy
9%
Industry Standard
9%
Transients
9%
Heterostructures
9%
Power Amplifier
8%
Electric Field
8%
Tunnel
8%
Cu Film
8%
Chemical Vapor Deposition
8%
Nanomaterial
8%
Monolayers
8%
Room Temperature
8%
Metal Oxide Semiconductor
8%
Annealing Temperature
8%
Output Power
8%
Metal Organic Chemical Vapor Deposition
8%
Silicon on Insulator
8%
Barrier Layer
8%
Bonding Temperature
8%
Three Dimensional Integrated Circuits
8%
Gate Oxide
7%
Nanorod
7%
Interface State
7%
Magnetic Tunnel Junction
7%
Deep Learning Method
7%
Bonding Structure
7%
Reliability Analysis
7%
Interlayer
7%
Plasma Treatment
7%
Atomic Layer
7%
Buffer Layer
7%
Superlattice
7%
Polycrystalline
7%
Simulation Result
7%
Oxide Layer
7%
Band Gap
6%
Annealing Process
6%
Gate Voltage
6%
Intermetallics
6%
Single Pole
6%
Piezoelectric
6%
SPICE
6%
Insertion Loss
6%
Level Packaging
6%
Metallizations
6%
Interposer
6%
Vapor Deposition
6%
Interface Trap
6%