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Material Science
Transistor
100%
Ferroelectric Material
89%
Density
76%
Field Effect Transistor
63%
Film
61%
Electron Mobility
52%
Dielectric Material
51%
Capacitance
42%
Oxide Compound
41%
Electronic Circuit
38%
Metal-Oxide-Semiconductor Field-Effect Transistor
37%
Silicon
35%
Heterojunction
28%
Annealing
28%
Mechanical Property
23%
High Entropy Alloys
23%
Capacitor
23%
Monolayers
22%
Nanowire
22%
Contact Resistance
22%
Alloy
21%
Thermal Stability
20%
Grain Size
19%
Thin Films
17%
Transmission Electron Microscopy
17%
Aluminum Nitride
17%
Transition Metal Dichalcogenide
17%
Grain Boundary
17%
Nanosheet
16%
Polymer
15%
Electrical Property
15%
Ultimate Tensile Strength
14%
Scanning Electron Microscopy
13%
Two-Dimensional Material
13%
Thermal Expansion
13%
Intermetallics
13%
Polyimide
12%
Surface Roughness
12%
Electroplating
12%
Metal Oxide
11%
Nanocrystalline
11%
X-Ray Photoelectron Spectroscopy
11%
Zirconia
11%
Oxide Semiconductor
11%
Epitaxy
11%
ZnO
11%
Indium
10%
Thin-Film Transistor
10%
Aluminum Oxide
10%
Schottky Barrier
10%
Hafnium
10%
Nucleation
9%
Indium Gallium Arsenide
9%
Carbon Nanotube
9%
Oxide Thickness
9%
Atomic Force Microscopy
9%
Crystallization
9%
Electrical Resistivity
9%
Superlattice
9%
Ferroelectricity
9%
Thermal Cycling
9%
Resistive Random-Access Memory
9%
Chemical Vapor Deposition
9%
Gallium Nitride
8%
Hydrogen
8%
Solder Joint
8%
Electrical Breakdown
8%
Strength of Materials
8%
Charge Trapping
8%
Power Device
8%
Annealing Temperature
8%
Nanoparticle
7%
Medium-Entropy Alloy
7%
Protective Atmosphere
7%
Chemical Mechanical Planarization
7%
Oxygen Vacancy
7%
Elevated Temperature
7%
Failure Mechanism
7%
Ductility
7%
Metal-Organic Chemical Vapor Deposition
7%
Single Crystal
6%
Twin Boundary
6%
Diffusivity
6%
Yield Stress
6%
Anisotropy
6%
Sapphire
6%
Electrodeposition
6%
Doping (Additives)
6%
Shear Testing
6%
Surface Modification
6%
Thermal Stress
6%
High-Resolution Transmission Electron Microscopy
6%
Nanorod
6%
Permittivity
6%
Anode
5%
Molybdenum
5%
Focused Ion Beam
5%
Nanostructure
5%
Buffer Layer
5%
X-Ray Diffraction
5%
Keyphrases
Nanotwinned Cu
33%
Low Temperature
28%
Nanoporous Copper
27%
GaN HEMT
26%
High Electron Mobility Transistor
24%
AlGaN/GaN High Electron Mobility Transistor
22%
Ferroelectric Field-effect Transistor (FeFET)
22%
Cu-Cu Bonding
21%
Compact Model
19%
Ultrathin
18%
Negative Capacitance Field Effect Transistor (NCFET)
18%
3D IC
18%
Threshold Voltage
17%
Hybrid Bonding
17%
Annealing
16%
High Performance
16%
Bonding Interface
15%
AlGaN-GaN
15%
Fin Field-effect Transistor (FinFET)
15%
Cu Film
15%
(111)-oriented
15%
Gate Stack
15%
Transistor
15%
MOSFET
15%
Silica
15%
Electromigration
14%
Interfacial Layer
14%
Subthreshold Swing
14%
Metal-insulator-semiconductor
13%
Negative Capacitance
13%
Enhancement-mode (E-mode)
12%
Electrical Properties
12%
Bonding Strength
12%
Passivation Layer
11%
HfO2
11%
GaN MIS-HEMT
11%
Electrical Characteristics
11%
Mechanical Properties
10%
Field-effect Transistors
10%
Ka-band
10%
Capacitor
10%
MIS-HEMT
10%
GaN-on-Si
10%
Metal-organic Chemical Vapor Deposition (MOCVD)
10%
Bonding Quality
10%
High-entropy Alloy
10%
On-resistance
10%
Heterogeneous Integration
9%
Microstructure
9%
Electroplating
9%
Molybdenite
9%
Microbump
9%
Cu/SiO2 Hybrid Bonding
9%
Bonding Process
9%
Heterostructure
9%
Cu-Cu
9%
In Situ
9%
Advanced Packaging
8%
Room Temperature
8%
Gate Length
8%
Non-volatile Memory
8%
Copper Bonding
8%
Current Density
8%
P-GaN
8%
Passivation
8%
Gallium Nitride
8%
On-state Current
8%
Atomic Scale
8%
Gate Dielectric
8%
Ferroelectric Capacitor
8%
Memory Window
8%
InAlGaN
8%
Charge Trapping
8%
Nanotwins
7%
Device Performance
7%
InGaAs
7%
Contact Resistance
7%
Thermal Stability
7%
Breakdown Voltage
7%
Leakage Current
7%
Dielectric
7%
Cu Foil
7%
High Power
7%
Equivalent Oxide Thickness
7%
3D Integration
7%
Thin-film Transistors
7%
Low Temperature Cu to Cu Direct Bonding
7%
Transconductance
7%
Fine pitch
7%
Cu Pad
7%
Cu Joint
7%
Drain Current
7%
Superlattice
7%
Low Thermal Budget
7%
Downscaling
7%
Thermal Expansion
7%
Aluminum Gallium Nitride (AlGaN)
7%
Band Application
6%
Millimeter Wave
6%
Electrical Performance
6%
Engineering
Transistor
71%
Metal-Oxide-Semiconductor Field-Effect Transistor
35%
Low-Temperature
26%
Dielectrics
24%
Gate Stack
19%
Nitride
18%
Field Effect Transistor
17%
Millimeter Wave
16%
Silicon Dioxide
15%
Breakdown Voltage
14%
Field-Effect Transistor
14%
Ka-Band
12%
Antenna
12%
Gate Bias
11%
Polymer
11%
Passivation
10%
Gate Length
10%
Current Drain
10%
Joints (Structural Components)
9%
Interconnects
9%
Passivation Layer
9%
Engineering
9%
Power Amplifier
8%
Bonding Strength
8%
Channel Length
8%
Experimental Result
8%
Gate Dielectric
8%
Cutoff Frequency
8%
Atomic Layer
7%
Room Temperature
7%
Device Performance
7%
Interposer
7%
Power Device
7%
Indium Gallium Arsenide
7%
Metal Oxide Semiconductor
7%
Interfacial Layer
7%
Electrical Performance
7%
Gate Oxide
7%
X Ray
7%
Industry Standard
7%
Thin film transistors
7%
Bonding Process
7%
Bonding Technology
6%
Resistive
6%
Single Pole
6%
Electric Field
6%
Output Power
6%
Three Dimensional Integrated Circuits
6%
Radio Frequency
6%
Direct Bonding
6%
SPICE
6%
Oxide Thickness
6%
Gate Voltage
6%
Interlayer
6%
Silicon on Insulator
6%
Si Substrate
5%
Aluminum Oxide
5%
Monolayers
5%
Nonvolatile Memory
5%
Power Density
5%
Bonding Temperature
5%
Power Added Efficiency
5%