III-V Molecular Beam Epitaxy System

重要規格：(1) High Vacuum Growth chamber：Pressure < 5x10-10 torr. (2)Source Material：Ga、Al、In、As、Sb. (3) Doping Source：Be、Si、Te. (4) Max substrate Size：3 inch. (5) Epitaxy Layer thickness Variation < 5%. (6) The highest growth temperature：640℃. (7) In-situ rsidual gas analysis (RGA) and reflection high energy electron diffraction (RHEED, 15kV). (8) Regular monitoring epitaxy layer growth rate and quality.
服務內容：砷化物樣品委託成長、銻化物樣品委託成長、特殊結構測試費用