III-V Molecular Beam Epitaxy System

Equipment/facility: Equipment

Equipments Details


重要規格:(1) High Vacuum Growth chamber:Pressure < 5x10-10 torr. (2)Source Material:Ga、Al、In、As、Sb. (3) Doping Source:Be、Si、Te. (4) Max substrate Size:3 inch. (5) Epitaxy Layer thickness Variation < 5%. (6) The highest growth temperature:640℃. (7) In-situ rsidual gas analysis (RGA) and reflection high energy electron diffraction (RHEED, 15kV). (8) Regular monitoring epitaxy layer growth rate and quality.


NameIII-V Molecular Beam Epitaxy System
Acquisition date1/08/04
ManufacturersVeeco Instruments Inc.
Photo associated with equipment - 20150108164936222059.jpg


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